Growth of high quality Ge/Si 1-x Ge x on nano-scale patterned Si structures

G. Vanamu, A. K. Datye, Saleem H. Zaidi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Heteroepitaxial growth of thick (∼6 μm) Ge3 μm Six Ge1-x layers on nano-scale patterned Si substrates has been investigated. These nm scale structures are fabricated using interferometric lithography with reactive ion and wet-chemical etching techniques. The quality of the growth on the nanopatterned substrates was compared to growth on planar substrates. The quality of the epitaxial layers was characterized using scanning electron microscopy, transmission electron microscopy, high-resolution x-ray diffraction and etch pit density measurements. We demonstrated the nanopatterned structures produce significantly superior quality heteroepitaxial epilayers in comparison with unpatterned Si surfaces. The dislocation density of Ge epilayers on the nanopatterned Si was ∼ three orders magnitude lower than on planar Si. Growth on nanopatterned surfaces also reduced surface roughness and eliminated crosshatch patterns characterstic of planar surfaces.

Original languageEnglish
Pages (from-to)1622-1629
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number4
DOIs
Publication statusPublished - 2005
Externally publishedYes

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Epilayers
Substrates
Wet etching
Epitaxial layers
High resolution transmission electron microscopy
Epitaxial growth
Lithography
Diffraction
Surface roughness
X rays
surface roughness
Scanning electron microscopy
x ray diffraction
lithography
Ions
etching
transmission electron microscopy
scanning electron microscopy
high resolution
ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Growth of high quality Ge/Si 1-x Ge x on nano-scale patterned Si structures. / Vanamu, G.; Datye, A. K.; Zaidi, Saleem H.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 4, 2005, p. 1622-1629.

Research output: Contribution to journalArticle

@article{e510611d5d1543c49ad57cc27c0e5836,
title = "Growth of high quality Ge/Si 1-x Ge x on nano-scale patterned Si structures",
abstract = "Heteroepitaxial growth of thick (∼6 μm) Ge3 μm Six Ge1-x layers on nano-scale patterned Si substrates has been investigated. These nm scale structures are fabricated using interferometric lithography with reactive ion and wet-chemical etching techniques. The quality of the growth on the nanopatterned substrates was compared to growth on planar substrates. The quality of the epitaxial layers was characterized using scanning electron microscopy, transmission electron microscopy, high-resolution x-ray diffraction and etch pit density measurements. We demonstrated the nanopatterned structures produce significantly superior quality heteroepitaxial epilayers in comparison with unpatterned Si surfaces. The dislocation density of Ge epilayers on the nanopatterned Si was ∼ three orders magnitude lower than on planar Si. Growth on nanopatterned surfaces also reduced surface roughness and eliminated crosshatch patterns characterstic of planar surfaces.",
author = "G. Vanamu and Datye, {A. K.} and Zaidi, {Saleem H.}",
year = "2005",
doi = "10.1116/1.1978898",
language = "English",
volume = "23",
pages = "1622--1629",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Growth of high quality Ge/Si 1-x Ge x on nano-scale patterned Si structures

AU - Vanamu, G.

AU - Datye, A. K.

AU - Zaidi, Saleem H.

PY - 2005

Y1 - 2005

N2 - Heteroepitaxial growth of thick (∼6 μm) Ge3 μm Six Ge1-x layers on nano-scale patterned Si substrates has been investigated. These nm scale structures are fabricated using interferometric lithography with reactive ion and wet-chemical etching techniques. The quality of the growth on the nanopatterned substrates was compared to growth on planar substrates. The quality of the epitaxial layers was characterized using scanning electron microscopy, transmission electron microscopy, high-resolution x-ray diffraction and etch pit density measurements. We demonstrated the nanopatterned structures produce significantly superior quality heteroepitaxial epilayers in comparison with unpatterned Si surfaces. The dislocation density of Ge epilayers on the nanopatterned Si was ∼ three orders magnitude lower than on planar Si. Growth on nanopatterned surfaces also reduced surface roughness and eliminated crosshatch patterns characterstic of planar surfaces.

AB - Heteroepitaxial growth of thick (∼6 μm) Ge3 μm Six Ge1-x layers on nano-scale patterned Si substrates has been investigated. These nm scale structures are fabricated using interferometric lithography with reactive ion and wet-chemical etching techniques. The quality of the growth on the nanopatterned substrates was compared to growth on planar substrates. The quality of the epitaxial layers was characterized using scanning electron microscopy, transmission electron microscopy, high-resolution x-ray diffraction and etch pit density measurements. We demonstrated the nanopatterned structures produce significantly superior quality heteroepitaxial epilayers in comparison with unpatterned Si surfaces. The dislocation density of Ge epilayers on the nanopatterned Si was ∼ three orders magnitude lower than on planar Si. Growth on nanopatterned surfaces also reduced surface roughness and eliminated crosshatch patterns characterstic of planar surfaces.

UR - http://www.scopus.com/inward/record.url?scp=31144435817&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31144435817&partnerID=8YFLogxK

U2 - 10.1116/1.1978898

DO - 10.1116/1.1978898

M3 - Article

VL - 23

SP - 1622

EP - 1629

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 4

ER -