Growth of high-quality GaAs on Ge/Si 1-xGe x on nanostructured silicon substrates

G. Vanamu, A. K. Datye, R. Dawson, Saleem H. Zaidi

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Heteroepitaxial growth of GaAs/Ge/SiGe films on submicrostructured Si substrates is reported. One-dimensional, nanometer-linewidth, submicrometer period features were fabricated in Si substrates using interferometric lithography, reactive ion etching, and wet-chemical etching techniques. The quality of the GaAs layers grown on these structures was investigated using high-resolution x-ray diffraction, transmission electron microscopy, scanning electron microscopy, photoluminescencc, and etch pit density measurements. The defect density of GaAs epilayers grown on submicrostructured Si at ∼6 × 10 5 cm -2 was two orders of magnitude lower compared with that grown on planar silicon. The optical quality of the GaAs/Ge/SiGe on submicrostructured Si was comparable to that of single crystal GaAs.

Original languageEnglish
Article number251909
JournalApplied Physics Letters
Volume88
Issue number25
DOIs
Publication statusPublished - 19 Jun 2006
Externally publishedYes

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etching
silicon
x ray diffraction
lithography
transmission electron microscopy
scanning electron microscopy
high resolution
single crystals
defects
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth of high-quality GaAs on Ge/Si 1-xGe x on nanostructured silicon substrates. / Vanamu, G.; Datye, A. K.; Dawson, R.; Zaidi, Saleem H.

In: Applied Physics Letters, Vol. 88, No. 25, 251909, 19.06.2006.

Research output: Contribution to journalArticle

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