Growth and characterization of (100) and (111) 3C-SiC thin film for MEMS capacitive pressure sensor for extreme environments

Noraini Marsi, Burhanuddin Yeop Majlis, Azrul Azlan Hamzah, Faisal Mohd-Yasin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The (100) and (111) crystalline cubic silicon carbide (3C-SiC) thin films have been epitaxially deposited on (100) silicon substrate with the thickness of 0.5 μm and 1.0 μm. The effects of the different growth of 3C-SiC are considered as the most critical factor in determining the mechanical properties by comparing with bulk value such as Young's modulus (~455 GPa) and hardness (~42 GPa). This paper evaluates the mechanical characteristic of the 3C-SiC-on-Si wafers to improve the 3C-SiC thin film quality. The aim is to employ the thin film as the flexible diaphragm in the MEMS capacitive pressure sensor for extreme environment. The surface morphology of thin layer of grown 3C-SiC wafers are characterized by X-ray diffraction (XRD), Infinite Focus Microscopy (IFM), scanning electron microscopy (SEM) and nano-indentation test. The results show the superior mechanical strengths of both (100) and (111) 3C-SiC thin films over (100) Si. To conclude, these results show that (100) and (111) 3C-SiC are indeed high quality thin film characterization compare to (100) Si thin film, and it is suitable to be employed as the flexible diaphragm of the MEMS capacitive pressure sensor for extreme environments.

Original languageEnglish
Title of host publicationAdvanced Materials Research
PublisherTrans Tech Publications Ltd
Pages356-359
Number of pages4
Volume1024
ISBN (Print)9783038352136
DOIs
Publication statusPublished - 2014
Event3rd International Conference on the Advancement of Materials and Nanotechnology, ICAMN 3 2013 - Penang
Duration: 19 Nov 201321 Nov 2013

Publication series

NameAdvanced Materials Research
Volume1024
ISSN (Print)10226680
ISSN (Electronic)16628985

Other

Other3rd International Conference on the Advancement of Materials and Nanotechnology, ICAMN 3 2013
CityPenang
Period19/11/1321/11/13

Fingerprint

Capacitive sensors
Pressure sensors
MEMS
Thin films
Diaphragms
Nanoindentation
Silicon carbide
Strength of materials
Surface morphology
Microscopic examination
Elastic moduli
Hardness
Crystalline materials
X ray diffraction
Silicon
Mechanical properties
Scanning electron microscopy
Substrates

Keywords

  • 3C-SiC
  • CVD
  • MEMS sensor
  • Nano-indentation
  • X-ray diffraction (XRD)

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Marsi, N., Yeop Majlis, B., Hamzah, A. A., & Mohd-Yasin, F. (2014). Growth and characterization of (100) and (111) 3C-SiC thin film for MEMS capacitive pressure sensor for extreme environments. In Advanced Materials Research (Vol. 1024, pp. 356-359). (Advanced Materials Research; Vol. 1024). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/AMR.1024.356

Growth and characterization of (100) and (111) 3C-SiC thin film for MEMS capacitive pressure sensor for extreme environments. / Marsi, Noraini; Yeop Majlis, Burhanuddin; Hamzah, Azrul Azlan; Mohd-Yasin, Faisal.

Advanced Materials Research. Vol. 1024 Trans Tech Publications Ltd, 2014. p. 356-359 (Advanced Materials Research; Vol. 1024).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Marsi, N, Yeop Majlis, B, Hamzah, AA & Mohd-Yasin, F 2014, Growth and characterization of (100) and (111) 3C-SiC thin film for MEMS capacitive pressure sensor for extreme environments. in Advanced Materials Research. vol. 1024, Advanced Materials Research, vol. 1024, Trans Tech Publications Ltd, pp. 356-359, 3rd International Conference on the Advancement of Materials and Nanotechnology, ICAMN 3 2013, Penang, 19/11/13. https://doi.org/10.4028/www.scientific.net/AMR.1024.356
Marsi N, Yeop Majlis B, Hamzah AA, Mohd-Yasin F. Growth and characterization of (100) and (111) 3C-SiC thin film for MEMS capacitive pressure sensor for extreme environments. In Advanced Materials Research. Vol. 1024. Trans Tech Publications Ltd. 2014. p. 356-359. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.1024.356
Marsi, Noraini ; Yeop Majlis, Burhanuddin ; Hamzah, Azrul Azlan ; Mohd-Yasin, Faisal. / Growth and characterization of (100) and (111) 3C-SiC thin film for MEMS capacitive pressure sensor for extreme environments. Advanced Materials Research. Vol. 1024 Trans Tech Publications Ltd, 2014. pp. 356-359 (Advanced Materials Research).
@inproceedings{058b7883500a484587afe2a07670a070,
title = "Growth and characterization of (100) and (111) 3C-SiC thin film for MEMS capacitive pressure sensor for extreme environments",
abstract = "The (100) and (111) crystalline cubic silicon carbide (3C-SiC) thin films have been epitaxially deposited on (100) silicon substrate with the thickness of 0.5 μm and 1.0 μm. The effects of the different growth of 3C-SiC are considered as the most critical factor in determining the mechanical properties by comparing with bulk value such as Young's modulus (~455 GPa) and hardness (~42 GPa). This paper evaluates the mechanical characteristic of the 3C-SiC-on-Si wafers to improve the 3C-SiC thin film quality. The aim is to employ the thin film as the flexible diaphragm in the MEMS capacitive pressure sensor for extreme environment. The surface morphology of thin layer of grown 3C-SiC wafers are characterized by X-ray diffraction (XRD), Infinite Focus Microscopy (IFM), scanning electron microscopy (SEM) and nano-indentation test. The results show the superior mechanical strengths of both (100) and (111) 3C-SiC thin films over (100) Si. To conclude, these results show that (100) and (111) 3C-SiC are indeed high quality thin film characterization compare to (100) Si thin film, and it is suitable to be employed as the flexible diaphragm of the MEMS capacitive pressure sensor for extreme environments.",
keywords = "3C-SiC, CVD, MEMS sensor, Nano-indentation, X-ray diffraction (XRD)",
author = "Noraini Marsi and {Yeop Majlis}, Burhanuddin and Hamzah, {Azrul Azlan} and Faisal Mohd-Yasin",
year = "2014",
doi = "10.4028/www.scientific.net/AMR.1024.356",
language = "English",
isbn = "9783038352136",
volume = "1024",
series = "Advanced Materials Research",
publisher = "Trans Tech Publications Ltd",
pages = "356--359",
booktitle = "Advanced Materials Research",

}

TY - GEN

T1 - Growth and characterization of (100) and (111) 3C-SiC thin film for MEMS capacitive pressure sensor for extreme environments

AU - Marsi, Noraini

AU - Yeop Majlis, Burhanuddin

AU - Hamzah, Azrul Azlan

AU - Mohd-Yasin, Faisal

PY - 2014

Y1 - 2014

N2 - The (100) and (111) crystalline cubic silicon carbide (3C-SiC) thin films have been epitaxially deposited on (100) silicon substrate with the thickness of 0.5 μm and 1.0 μm. The effects of the different growth of 3C-SiC are considered as the most critical factor in determining the mechanical properties by comparing with bulk value such as Young's modulus (~455 GPa) and hardness (~42 GPa). This paper evaluates the mechanical characteristic of the 3C-SiC-on-Si wafers to improve the 3C-SiC thin film quality. The aim is to employ the thin film as the flexible diaphragm in the MEMS capacitive pressure sensor for extreme environment. The surface morphology of thin layer of grown 3C-SiC wafers are characterized by X-ray diffraction (XRD), Infinite Focus Microscopy (IFM), scanning electron microscopy (SEM) and nano-indentation test. The results show the superior mechanical strengths of both (100) and (111) 3C-SiC thin films over (100) Si. To conclude, these results show that (100) and (111) 3C-SiC are indeed high quality thin film characterization compare to (100) Si thin film, and it is suitable to be employed as the flexible diaphragm of the MEMS capacitive pressure sensor for extreme environments.

AB - The (100) and (111) crystalline cubic silicon carbide (3C-SiC) thin films have been epitaxially deposited on (100) silicon substrate with the thickness of 0.5 μm and 1.0 μm. The effects of the different growth of 3C-SiC are considered as the most critical factor in determining the mechanical properties by comparing with bulk value such as Young's modulus (~455 GPa) and hardness (~42 GPa). This paper evaluates the mechanical characteristic of the 3C-SiC-on-Si wafers to improve the 3C-SiC thin film quality. The aim is to employ the thin film as the flexible diaphragm in the MEMS capacitive pressure sensor for extreme environment. The surface morphology of thin layer of grown 3C-SiC wafers are characterized by X-ray diffraction (XRD), Infinite Focus Microscopy (IFM), scanning electron microscopy (SEM) and nano-indentation test. The results show the superior mechanical strengths of both (100) and (111) 3C-SiC thin films over (100) Si. To conclude, these results show that (100) and (111) 3C-SiC are indeed high quality thin film characterization compare to (100) Si thin film, and it is suitable to be employed as the flexible diaphragm of the MEMS capacitive pressure sensor for extreme environments.

KW - 3C-SiC

KW - CVD

KW - MEMS sensor

KW - Nano-indentation

KW - X-ray diffraction (XRD)

UR - http://www.scopus.com/inward/record.url?scp=84906979343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906979343&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.1024.356

DO - 10.4028/www.scientific.net/AMR.1024.356

M3 - Conference contribution

SN - 9783038352136

VL - 1024

T3 - Advanced Materials Research

SP - 356

EP - 359

BT - Advanced Materials Research

PB - Trans Tech Publications Ltd

ER -