Geometrical characterization of single layer silicon based piezoresistive microcantilever using ANSYS

Mohd Hazrul Zakaria, Badariah Bais, Rosminazuin Ab Rahim, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, characterization on the geometrical aspects of a single layer, p-doped silicon based piezoresistive microcantilever using finite element method is presented. The displacement and the von Mises stress obtained from the simulation were observed by varying the geometries of the microcantilever namely the thickness, length, width and the distance between the piezoresistor legs. The sensitivity of the microcantilever was then calculated and tabulated. From the simulation results, it can be shown that the displacement and sensitivity of the single layer piezoresistive microcantilever is comparable to the dual layer counterpart with the thinner microcantilever resulted in a maximum displacement and sensitivity, compared to other geometrical factors.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages336-339
Number of pages4
DOIs
Publication statusPublished - 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur
Duration: 19 Sep 201221 Sep 2012

Other

Other2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CityKuala Lumpur
Period19/9/1221/9/12

Fingerprint

Finite element method
Silicon
Geometry

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Zakaria, M. H., Bais, B., Rahim, R. A., & Yeop Majlis, B. (2012). Geometrical characterization of single layer silicon based piezoresistive microcantilever using ANSYS. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 336-339). [6417154] https://doi.org/10.1109/SMElec.2012.6417154

Geometrical characterization of single layer silicon based piezoresistive microcantilever using ANSYS. / Zakaria, Mohd Hazrul; Bais, Badariah; Rahim, Rosminazuin Ab; Yeop Majlis, Burhanuddin.

2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 336-339 6417154.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zakaria, MH, Bais, B, Rahim, RA & Yeop Majlis, B 2012, Geometrical characterization of single layer silicon based piezoresistive microcantilever using ANSYS. in 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings., 6417154, pp. 336-339, 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012, Kuala Lumpur, 19/9/12. https://doi.org/10.1109/SMElec.2012.6417154
Zakaria MH, Bais B, Rahim RA, Yeop Majlis B. Geometrical characterization of single layer silicon based piezoresistive microcantilever using ANSYS. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 336-339. 6417154 https://doi.org/10.1109/SMElec.2012.6417154
Zakaria, Mohd Hazrul ; Bais, Badariah ; Rahim, Rosminazuin Ab ; Yeop Majlis, Burhanuddin. / Geometrical characterization of single layer silicon based piezoresistive microcantilever using ANSYS. 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. pp. 336-339
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