Ge growth on nanostructured silicon surfaces

Ganesh Vanamu, Abhaya K. Datye, Saleem H. Zaidi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report highest quality Ge epilayers on nanoscale patterned Si structures. 100% Ge films of 10 μm are deposited using chemical vapor deposition. The quality of Ge layers was examined using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and high-resolution x-ray diffraction (HRXRD) measurements. The defect density was evaluated using etch pit density measurements. We have obtained lowest dislocation density (5×10 5 cm -2) Ge films on the nanopatterned Si structures. The full width half maximum peaks of the reciprocal space maps of Ge epilayers on the nanopatterned Si showed 93 arc sec. We were able to get rid of the crosshatch pattern on the Ge surface grown on the nanopatterned Si. We also showed that there is a significant improvement of the quality of the Ge epilayers in the nanopatterned Si compared to an unpatterned Si. We observed nearly three-order magnitude decrease in the dislocation density in the patterned compared to the unpatterned structures. The Ge epilayer in the patterned Si has a dislocation density of 5×10 5 cm -2 as compared to 6×10 8 cm -2 for unpatterned Si.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsR. Collins, P.C. Taylor, M. Kondo, R. Carius, R. Biswas
Pages213-218
Number of pages6
Volume862
Publication statusPublished - 2005
Externally publishedYes
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: 28 Mar 20051 Apr 2005

Other

Other2005 Materials Research Society Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period28/3/051/4/05

Fingerprint

Epilayers
Silicon
Defect density
Chemical vapor deposition
Diffraction
Transmission electron microscopy
X rays
Scanning electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Vanamu, G., Datye, A. K., & Zaidi, S. H. (2005). Ge growth on nanostructured silicon surfaces. In R. Collins, P. C. Taylor, M. Kondo, R. Carius, & R. Biswas (Eds.), Materials Research Society Symposium Proceedings (Vol. 862, pp. 213-218). [A2.6]

Ge growth on nanostructured silicon surfaces. / Vanamu, Ganesh; Datye, Abhaya K.; Zaidi, Saleem H.

Materials Research Society Symposium Proceedings. ed. / R. Collins; P.C. Taylor; M. Kondo; R. Carius; R. Biswas. Vol. 862 2005. p. 213-218 A2.6.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vanamu, G, Datye, AK & Zaidi, SH 2005, Ge growth on nanostructured silicon surfaces. in R Collins, PC Taylor, M Kondo, R Carius & R Biswas (eds), Materials Research Society Symposium Proceedings. vol. 862, A2.6, pp. 213-218, 2005 Materials Research Society Spring Meeting, San Francisco, CA, United States, 28/3/05.
Vanamu G, Datye AK, Zaidi SH. Ge growth on nanostructured silicon surfaces. In Collins R, Taylor PC, Kondo M, Carius R, Biswas R, editors, Materials Research Society Symposium Proceedings. Vol. 862. 2005. p. 213-218. A2.6
Vanamu, Ganesh ; Datye, Abhaya K. ; Zaidi, Saleem H. / Ge growth on nanostructured silicon surfaces. Materials Research Society Symposium Proceedings. editor / R. Collins ; P.C. Taylor ; M. Kondo ; R. Carius ; R. Biswas. Vol. 862 2005. pp. 213-218
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