Gate tunneling current in thin oxide MOSFET

Mohammed Fakhrul Karim, Sahbudin Shaari, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Quantum mechanical tunneling of electrical conduction in thin insulating film (SiO2) from the strongly inverted Si surface has been studied. A simple method of calculating the penetration probability of the energetic electrons, and the tunneling current is proposed. These electrons are from a series of quantized energy levels in the potential well (assuming triangular in nature), formed by the large bending of the silicon conduction band at the surface. Due to the down scaling of the device dimension, the field across the oxide becomes high enough, and causes a large band bending in the form of a narrow potential well. Gate oxide thickness and gate voltage dependence of the tunneling current is analyzed using the tunneling current model. This study may be helpful to predict the oxide breakdown process.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages287-292
Number of pages6
Publication statusPublished - 1997
EventProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
Duration: 26 Nov 199628 Nov 1996

Other

OtherProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
CityPenang, Malaysia
Period26/11/9628/11/96

Fingerprint

Oxides
Electron tunneling
Electrons
Conduction bands
Electron energy levels
Silicon
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Karim, M. F., Shaari, S., & Yeop Majlis, B. (1997). Gate tunneling current in thin oxide MOSFET. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 287-292). Piscataway, NJ, United States: IEEE.

Gate tunneling current in thin oxide MOSFET. / Karim, Mohammed Fakhrul; Shaari, Sahbudin; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1997. p. 287-292.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Karim, MF, Shaari, S & Yeop Majlis, B 1997, Gate tunneling current in thin oxide MOSFET. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, Piscataway, NJ, United States, pp. 287-292, Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, 26/11/96.
Karim MF, Shaari S, Yeop Majlis B. Gate tunneling current in thin oxide MOSFET. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States: IEEE. 1997. p. 287-292
Karim, Mohammed Fakhrul ; Shaari, Sahbudin ; Yeop Majlis, Burhanuddin. / Gate tunneling current in thin oxide MOSFET. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1997. pp. 287-292
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