Gamma-irradiation effect on material properties behaviour of semiconductor package

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current trends in digitization led to the application of an electronic package in many fields which are exposed to radioactive environment. Quad-Flat No-Lead (QFN) package technology is among the latest form of semiconductor package development in submicron size scale. A QFN package is designed by combining multimaterial and multitechnology. The ability to predict and eventually to prevent mechanical failures of microelectronics has becoming increasingly important in the development of semiconductor technology. Therefore, the relationship between the microstructure property behaviour of QFN semiconductor package and gamma irradiation has been investigated. The inhouse fabricated QFN was exposed to gamma radiation from a Cobalt-60 source with different doses varies from 0.5 Gy, and 50.0 kGy. Following, the packages were then subjected to Scanning Acoustic Microscope (CSAM) and X-ray Imaging System (3D X-ray) in order to identify internal discontinuity due to irradiation. In this investigation, the three point bending technique was used to obtain the flexural strength of the package. Irradiation packages have shown a decrease in their flexural strength with the increasing of gamma dose. In-depth analysis exhibited that the increment of exposure dose also influenced the occurrence of delamination between silicon die and copper leadframe. The cracks were also observed on the surface of the silicon die. The gamma irradiation is believed to play an important role towards the microstructure property behaviour of SDQFN package.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages300-305
Number of pages6
Volume1528
DOIs
Publication statusPublished - 2013
Event2012 National Physics Conference, PERFIK 2012 - Bukit Tinggi, Pahang
Duration: 19 Nov 201221 Nov 2012

Other

Other2012 National Physics Conference, PERFIK 2012
CityBukit Tinggi, Pahang
Period19/11/1221/11/12

Fingerprint

irradiation
flexural strength
dosage
acoustic microscopes
cobalt 60
microstructure
silicon
microelectronics
discontinuity
x rays
cracks
occurrences
gamma rays
trends
copper
scanning
electronics

Keywords

  • Flexural strength
  • gamma-irradiation
  • microstructure property
  • semiconductor package

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Gamma-irradiation effect on material properties behaviour of semiconductor package. / Yusoff, Wan Yusmawati Wan; Jalar @ Jalil, Azman; Othman, Norinsan Kamil; Abdul Rahman, Irman.

AIP Conference Proceedings. Vol. 1528 2013. p. 300-305.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yusoff, WYW, Jalar @ Jalil, A, Othman, NK & Abdul Rahman, I 2013, Gamma-irradiation effect on material properties behaviour of semiconductor package. in AIP Conference Proceedings. vol. 1528, pp. 300-305, 2012 National Physics Conference, PERFIK 2012, Bukit Tinggi, Pahang, 19/11/12. https://doi.org/10.1063/1.4803613
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