Abstract
A sol-gel method was used to synthesise different compositions of Ga-doped tungsten trioxide thin films using tungstic acid and gallium(III) nitrate as starting materials. The precursor solutions were drop-casted on FTO glass and annealed at 500 C for 30 min, and the resulting materials were characterised with SEM, XRD, UV/Vis spectrophotometry and photoelectrochemical analysis. The Ga-doped WO3 samples exhibited a greater grain than undoped WO 3, and a monoclinic structure was observed for all WO3 samples. The band gap reduction of WO3 from 2.74 to 2.60 eV indicated the red-shift of light absorption towards the visible light region in the solar spectrum. The donor carrier density for the doped WO3 increased, and the conduction band edge position exhibited a positive shift. The photoactivity of WO3 increased threefold when the photoanode was 20% doped with gallium.
| Original language | English |
|---|---|
| Pages (from-to) | 9585-9591 |
| Number of pages | 7 |
| Journal | International Journal of Hydrogen Energy |
| Volume | 38 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 26 Jul 2013 |
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Keywords
- Ga-doped WO
- Photocurrent
- Photoelectrochemical water
- Photoelectrode
- splitting
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Fuel Technology
- Condensed Matter Physics
- Energy Engineering and Power Technology
Cite this
Gallium-doped tungsten trioxide thin film photoelectrodes for photoelectrochemical water splitting. / Ng, Kim Hang; Effery Minggu, Lorna; Kassim, Mohammad.
In: International Journal of Hydrogen Energy, Vol. 38, No. 22, 26.07.2013, p. 9585-9591.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Gallium-doped tungsten trioxide thin film photoelectrodes for photoelectrochemical water splitting
AU - Ng, Kim Hang
AU - Effery Minggu, Lorna
AU - Kassim, Mohammad
PY - 2013/7/26
Y1 - 2013/7/26
N2 - A sol-gel method was used to synthesise different compositions of Ga-doped tungsten trioxide thin films using tungstic acid and gallium(III) nitrate as starting materials. The precursor solutions were drop-casted on FTO glass and annealed at 500 C for 30 min, and the resulting materials were characterised with SEM, XRD, UV/Vis spectrophotometry and photoelectrochemical analysis. The Ga-doped WO3 samples exhibited a greater grain than undoped WO 3, and a monoclinic structure was observed for all WO3 samples. The band gap reduction of WO3 from 2.74 to 2.60 eV indicated the red-shift of light absorption towards the visible light region in the solar spectrum. The donor carrier density for the doped WO3 increased, and the conduction band edge position exhibited a positive shift. The photoactivity of WO3 increased threefold when the photoanode was 20% doped with gallium.
AB - A sol-gel method was used to synthesise different compositions of Ga-doped tungsten trioxide thin films using tungstic acid and gallium(III) nitrate as starting materials. The precursor solutions were drop-casted on FTO glass and annealed at 500 C for 30 min, and the resulting materials were characterised with SEM, XRD, UV/Vis spectrophotometry and photoelectrochemical analysis. The Ga-doped WO3 samples exhibited a greater grain than undoped WO 3, and a monoclinic structure was observed for all WO3 samples. The band gap reduction of WO3 from 2.74 to 2.60 eV indicated the red-shift of light absorption towards the visible light region in the solar spectrum. The donor carrier density for the doped WO3 increased, and the conduction band edge position exhibited a positive shift. The photoactivity of WO3 increased threefold when the photoanode was 20% doped with gallium.
KW - Ga-doped WO
KW - Photocurrent
KW - Photoelectrochemical water
KW - Photoelectrode
KW - splitting
UR - http://www.scopus.com/inward/record.url?scp=84879982973&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879982973&partnerID=8YFLogxK
U2 - 10.1016/j.ijhydene.2013.02.144
DO - 10.1016/j.ijhydene.2013.02.144
M3 - Article
AN - SCOPUS:84879982973
VL - 38
SP - 9585
EP - 9591
JO - International Journal of Hydrogen Energy
JF - International Journal of Hydrogen Energy
SN - 0360-3199
IS - 22
ER -