Gallium-doped tungsten trioxide thin film photoelectrodes for photoelectrochemical water splitting

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Abstract

A sol-gel method was used to synthesise different compositions of Ga-doped tungsten trioxide thin films using tungstic acid and gallium(III) nitrate as starting materials. The precursor solutions were drop-casted on FTO glass and annealed at 500 C for 30 min, and the resulting materials were characterised with SEM, XRD, UV/Vis spectrophotometry and photoelectrochemical analysis. The Ga-doped WO3 samples exhibited a greater grain than undoped WO 3, and a monoclinic structure was observed for all WO3 samples. The band gap reduction of WO3 from 2.74 to 2.60 eV indicated the red-shift of light absorption towards the visible light region in the solar spectrum. The donor carrier density for the doped WO3 increased, and the conduction band edge position exhibited a positive shift. The photoactivity of WO3 increased threefold when the photoanode was 20% doped with gallium.

Original languageEnglish
Pages (from-to)9585-9591
Number of pages7
JournalInternational Journal of Hydrogen Energy
Volume38
Issue number22
DOIs
Publication statusPublished - 26 Jul 2013

Fingerprint

water splitting
Gallium
gallium
Tungsten
tungsten
Thin films
solar spectra
Spectrophotometry
spectrophotometry
thin films
electromagnetic absorption
Conduction bands
red shift
Light absorption
Sol-gel process
Carrier concentration
nitrates
Water
Nitrates
conduction bands

Keywords

  • Ga-doped WO
  • Photocurrent
  • Photoelectrochemical water
  • Photoelectrode
  • splitting

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Condensed Matter Physics
  • Energy Engineering and Power Technology

Cite this

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title = "Gallium-doped tungsten trioxide thin film photoelectrodes for photoelectrochemical water splitting",
abstract = "A sol-gel method was used to synthesise different compositions of Ga-doped tungsten trioxide thin films using tungstic acid and gallium(III) nitrate as starting materials. The precursor solutions were drop-casted on FTO glass and annealed at 500 C for 30 min, and the resulting materials were characterised with SEM, XRD, UV/Vis spectrophotometry and photoelectrochemical analysis. The Ga-doped WO3 samples exhibited a greater grain than undoped WO 3, and a monoclinic structure was observed for all WO3 samples. The band gap reduction of WO3 from 2.74 to 2.60 eV indicated the red-shift of light absorption towards the visible light region in the solar spectrum. The donor carrier density for the doped WO3 increased, and the conduction band edge position exhibited a positive shift. The photoactivity of WO3 increased threefold when the photoanode was 20{\%} doped with gallium.",
keywords = "Ga-doped WO, Photocurrent, Photoelectrochemical water, Photoelectrode, splitting",
author = "Ng, {Kim Hang} and {Effery Minggu}, Lorna and Mohammad Kassim",
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T1 - Gallium-doped tungsten trioxide thin film photoelectrodes for photoelectrochemical water splitting

AU - Ng, Kim Hang

AU - Effery Minggu, Lorna

AU - Kassim, Mohammad

PY - 2013/7/26

Y1 - 2013/7/26

N2 - A sol-gel method was used to synthesise different compositions of Ga-doped tungsten trioxide thin films using tungstic acid and gallium(III) nitrate as starting materials. The precursor solutions were drop-casted on FTO glass and annealed at 500 C for 30 min, and the resulting materials were characterised with SEM, XRD, UV/Vis spectrophotometry and photoelectrochemical analysis. The Ga-doped WO3 samples exhibited a greater grain than undoped WO 3, and a monoclinic structure was observed for all WO3 samples. The band gap reduction of WO3 from 2.74 to 2.60 eV indicated the red-shift of light absorption towards the visible light region in the solar spectrum. The donor carrier density for the doped WO3 increased, and the conduction band edge position exhibited a positive shift. The photoactivity of WO3 increased threefold when the photoanode was 20% doped with gallium.

AB - A sol-gel method was used to synthesise different compositions of Ga-doped tungsten trioxide thin films using tungstic acid and gallium(III) nitrate as starting materials. The precursor solutions were drop-casted on FTO glass and annealed at 500 C for 30 min, and the resulting materials were characterised with SEM, XRD, UV/Vis spectrophotometry and photoelectrochemical analysis. The Ga-doped WO3 samples exhibited a greater grain than undoped WO 3, and a monoclinic structure was observed for all WO3 samples. The band gap reduction of WO3 from 2.74 to 2.60 eV indicated the red-shift of light absorption towards the visible light region in the solar spectrum. The donor carrier density for the doped WO3 increased, and the conduction band edge position exhibited a positive shift. The photoactivity of WO3 increased threefold when the photoanode was 20% doped with gallium.

KW - Ga-doped WO

KW - Photocurrent

KW - Photoelectrochemical water

KW - Photoelectrode

KW - splitting

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