GaAsBi MQWs for multi-junction photovoltaics

Robert Richards, Faebian Bastiman, Christopher J. Hunter, Abdul Rahman Mohmad, John P R David, Nicolas Ekins-Daukes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A GaAsBi/GaAs multiple quantum well diode with a p-i-n structure including a 0.6μm i-region containing a 40 periods of 8nm well and 7.4nm barriers has been grown by molecular beam epitaxy. The photocurrent of the fabricated device was measured and compared to that of a strain-balanced 65 period InGaAs/GaAsP MQW p-i-n diode grown by metal-organic vapour phase epitaxy. The GaAsBi device exhibits an ideality factor of 1.8 and a photoluminescence peak at 1055nm. The photocurrent of the GaAsBi device was comparable to that of the InGaAs/GaAsP device at around 920nm but continued to produce current out to ∼1100nm.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages303-305
Number of pages3
ISBN (Print)9781479932993
DOIs
Publication statusPublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL
Duration: 16 Jun 201321 Jun 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CityTampa, FL
Period16/6/1321/6/13

Fingerprint

Photocurrents
Diodes
Vapor phase epitaxy
Molecular beam epitaxy
Semiconductor quantum wells
Photoluminescence
Metals

Keywords

  • Bismuth
  • Bismuth compounds
  • III-V semiconductor materials
  • Materials science and technology
  • Photovoltaic cells
  • Quantum well devices
  • Semiconductor epitaxial layers
  • Semiconductor growth

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Richards, R., Bastiman, F., Hunter, C. J., Mohmad, A. R., David, J. P. R., & Ekins-Daukes, N. (2013). GaAsBi MQWs for multi-junction photovoltaics. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 303-305). [6744153] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744153

GaAsBi MQWs for multi-junction photovoltaics. / Richards, Robert; Bastiman, Faebian; Hunter, Christopher J.; Mohmad, Abdul Rahman; David, John P R; Ekins-Daukes, Nicolas.

Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. p. 303-305 6744153.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Richards, R, Bastiman, F, Hunter, CJ, Mohmad, AR, David, JPR & Ekins-Daukes, N 2013, GaAsBi MQWs for multi-junction photovoltaics. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6744153, Institute of Electrical and Electronics Engineers Inc., pp. 303-305, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, 16/6/13. https://doi.org/10.1109/PVSC.2013.6744153
Richards R, Bastiman F, Hunter CJ, Mohmad AR, David JPR, Ekins-Daukes N. GaAsBi MQWs for multi-junction photovoltaics. In Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc. 2013. p. 303-305. 6744153 https://doi.org/10.1109/PVSC.2013.6744153
Richards, Robert ; Bastiman, Faebian ; Hunter, Christopher J. ; Mohmad, Abdul Rahman ; David, John P R ; Ekins-Daukes, Nicolas. / GaAsBi MQWs for multi-junction photovoltaics. Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 303-305
@inproceedings{5def69acc3df4b42bbee129a8756c86a,
title = "GaAsBi MQWs for multi-junction photovoltaics",
abstract = "A GaAsBi/GaAs multiple quantum well diode with a p-i-n structure including a 0.6μm i-region containing a 40 periods of 8nm well and 7.4nm barriers has been grown by molecular beam epitaxy. The photocurrent of the fabricated device was measured and compared to that of a strain-balanced 65 period InGaAs/GaAsP MQW p-i-n diode grown by metal-organic vapour phase epitaxy. The GaAsBi device exhibits an ideality factor of 1.8 and a photoluminescence peak at 1055nm. The photocurrent of the GaAsBi device was comparable to that of the InGaAs/GaAsP device at around 920nm but continued to produce current out to ∼1100nm.",
keywords = "Bismuth, Bismuth compounds, III-V semiconductor materials, Materials science and technology, Photovoltaic cells, Quantum well devices, Semiconductor epitaxial layers, Semiconductor growth",
author = "Robert Richards and Faebian Bastiman and Hunter, {Christopher J.} and Mohmad, {Abdul Rahman} and David, {John P R} and Nicolas Ekins-Daukes",
year = "2013",
doi = "10.1109/PVSC.2013.6744153",
language = "English",
isbn = "9781479932993",
pages = "303--305",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - GaAsBi MQWs for multi-junction photovoltaics

AU - Richards, Robert

AU - Bastiman, Faebian

AU - Hunter, Christopher J.

AU - Mohmad, Abdul Rahman

AU - David, John P R

AU - Ekins-Daukes, Nicolas

PY - 2013

Y1 - 2013

N2 - A GaAsBi/GaAs multiple quantum well diode with a p-i-n structure including a 0.6μm i-region containing a 40 periods of 8nm well and 7.4nm barriers has been grown by molecular beam epitaxy. The photocurrent of the fabricated device was measured and compared to that of a strain-balanced 65 period InGaAs/GaAsP MQW p-i-n diode grown by metal-organic vapour phase epitaxy. The GaAsBi device exhibits an ideality factor of 1.8 and a photoluminescence peak at 1055nm. The photocurrent of the GaAsBi device was comparable to that of the InGaAs/GaAsP device at around 920nm but continued to produce current out to ∼1100nm.

AB - A GaAsBi/GaAs multiple quantum well diode with a p-i-n structure including a 0.6μm i-region containing a 40 periods of 8nm well and 7.4nm barriers has been grown by molecular beam epitaxy. The photocurrent of the fabricated device was measured and compared to that of a strain-balanced 65 period InGaAs/GaAsP MQW p-i-n diode grown by metal-organic vapour phase epitaxy. The GaAsBi device exhibits an ideality factor of 1.8 and a photoluminescence peak at 1055nm. The photocurrent of the GaAsBi device was comparable to that of the InGaAs/GaAsP device at around 920nm but continued to produce current out to ∼1100nm.

KW - Bismuth

KW - Bismuth compounds

KW - III-V semiconductor materials

KW - Materials science and technology

KW - Photovoltaic cells

KW - Quantum well devices

KW - Semiconductor epitaxial layers

KW - Semiconductor growth

UR - http://www.scopus.com/inward/record.url?scp=84896459570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896459570&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6744153

DO - 10.1109/PVSC.2013.6744153

M3 - Conference contribution

AN - SCOPUS:84896459570

SN - 9781479932993

SP - 303

EP - 305

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

PB - Institute of Electrical and Electronics Engineers Inc.

ER -