GaAs growth on micro and nano patterned Ge/ Sil-XGeX and Si surfaces

Ganesh Vanamu, Abhaya K. Datye, Ralph L. Dawson, Saleem H. Zaidi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We show heteroepitaxial growth of GaAs on Ge/SiGe grown on nanometer-scale grating structures. Conventional lithography techniques were combined with reactive ion and wet-chemical etching to fabricate 1-D patterns of silicon posts. The quality of the GaAs layers was investigated using high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), photoluminescence (PL) and etch pit density (EPD) measurements. Our results show significant improvement in the quality of heteroepitaxial layers grown on nano patterned structures compared to those on the unpatterned silicon. The optical quality of the GaAs/Ge/SiGe on nano-scale patterned silicon was comparable to that of single crystal GaAs.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsR. Collins, P.C. Taylor, M. Kondo, R. Carius, R. Biswas
Pages219-224
Number of pages6
Volume862
Publication statusPublished - 2005
Externally publishedYes
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: 28 Mar 20051 Apr 2005

Other

Other2005 Materials Research Society Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period28/3/051/4/05

Fingerprint

Silicon
Wet etching
Epitaxial growth
Lithography
Photoluminescence
Diffraction
Single crystals
Transmission electron microscopy
X rays
Scanning electron microscopy
Ions
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Vanamu, G., Datye, A. K., Dawson, R. L., & Zaidi, S. H. (2005). GaAs growth on micro and nano patterned Ge/ Sil-XGeX and Si surfaces. In R. Collins, P. C. Taylor, M. Kondo, R. Carius, & R. Biswas (Eds.), Materials Research Society Symposium Proceedings (Vol. 862, pp. 219-224). [A6.9]

GaAs growth on micro and nano patterned Ge/ Sil-XGeX and Si surfaces. / Vanamu, Ganesh; Datye, Abhaya K.; Dawson, Ralph L.; Zaidi, Saleem H.

Materials Research Society Symposium Proceedings. ed. / R. Collins; P.C. Taylor; M. Kondo; R. Carius; R. Biswas. Vol. 862 2005. p. 219-224 A6.9.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vanamu, G, Datye, AK, Dawson, RL & Zaidi, SH 2005, GaAs growth on micro and nano patterned Ge/ Sil-XGeX and Si surfaces. in R Collins, PC Taylor, M Kondo, R Carius & R Biswas (eds), Materials Research Society Symposium Proceedings. vol. 862, A6.9, pp. 219-224, 2005 Materials Research Society Spring Meeting, San Francisco, CA, United States, 28/3/05.
Vanamu G, Datye AK, Dawson RL, Zaidi SH. GaAs growth on micro and nano patterned Ge/ Sil-XGeX and Si surfaces. In Collins R, Taylor PC, Kondo M, Carius R, Biswas R, editors, Materials Research Society Symposium Proceedings. Vol. 862. 2005. p. 219-224. A6.9
Vanamu, Ganesh ; Datye, Abhaya K. ; Dawson, Ralph L. ; Zaidi, Saleem H. / GaAs growth on micro and nano patterned Ge/ Sil-XGeX and Si surfaces. Materials Research Society Symposium Proceedings. editor / R. Collins ; P.C. Taylor ; M. Kondo ; R. Carius ; R. Biswas. Vol. 862 2005. pp. 219-224
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