G-centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and proton irradiation

D. D. Berhanuddin, N. E.A. Razak, M. A. Lourenço, B. Y. Majlis, K. P. Homewood

Research output: Contribution to journalArticle

Abstract

The interest in the G-centre is driven by reports that it can lase in silicon. To further this, the transfer of this technology from bulk silicon to a silicon-on-insulator (SOI) platform is an essential requirement to progress to lasing and optical amplification on silicon. We report on the efficient generation of the lasing G-centre in SOI substrates by proton irradiation of carbon ion implants. Following carbon implantation samples were annealed and then proton irradiated to form the G-centre and characterized by photoluminescence measurements. The temperature dependence of the emission and the behaviour of the G-centre with post proton annealing were investigated and results are compared with identical implants in control samples of bulk silicon. Overall, we find that the optically active G-centre can be up to 300% brighter and has better survivability over a wider process window in SOI than in bulk silicon.

Original languageEnglish
Pages (from-to)1251-1257
Number of pages7
JournalSains Malaysiana
Volume48
Issue number6
DOIs
Publication statusPublished - 1 Jan 2019

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proton irradiation
ion implantation
platforms
insulators
irradiation
carbon
silicon
lasing
protons
implantation
photoluminescence
requirements
temperature dependence
annealing

Keywords

  • G-center
  • Ion implantation
  • Photoluminescence
  • Point-defect
  • SOI

ASJC Scopus subject areas

  • General

Cite this

G-centre formation and behaviour in a silicon on insulator platform by carbon ion implantation and proton irradiation. / Berhanuddin, D. D.; Razak, N. E.A.; Lourenço, M. A.; Majlis, B. Y.; Homewood, K. P.

In: Sains Malaysiana, Vol. 48, No. 6, 01.01.2019, p. 1251-1257.

Research output: Contribution to journalArticle

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