Fully depleted three-gate silicon MESFET on SOI material

analytical modeling and simulation

Hossein Mohammadi, Huda Abdullah, Chang Fu Dee, P. Susthitha Menon N V Visvanathan, Iraj Sadegh Amiri

Research output: Contribution to journalArticle

Abstract

An innovative type of device for high-density and high-speed applications, three-gate (TG) SOI-MESFET, is proposed. The new design is expected to exhibit excellent immunity against short channel effects (SCEs) and leakage current. To investigate the superior subthreshold characteristics of the suggested device, a physically based analytical model for channel potential and threshold voltage is developed. The model is based on the analytical solution of the three-dimensional Poisson equation with suitable boundary conditions. Using the model, the design features for the important device parameters and bias condition are examined and compared with classical SOI-MESFET. The accuracy of the model is validated by comparing the analytical results with Silvaco simulation and experimental data.

Original languageEnglish
JournalJournal of Computational Electronics
DOIs
Publication statusAccepted/In press - 1 Jan 2019

Fingerprint

Analytical Modeling
SOI (semiconductors)
Silicon
Modeling and Simulation
field effect transistors
silicon
Leakage Current
simulation
Poisson equation
Immunity
Poisson's equation
Threshold voltage
Leakage currents
Analytical Model
Analytical models
Analytical Solution
immunity
High Speed
Voltage
Experimental Data

Keywords

  • 3-D analytical model
  • Drain induced barrier lowering (DIBL)
  • Potential distribution
  • Subthreshold current
  • TCAD simulation
  • Three-gate SOI-MESFET
  • Threshold voltage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modelling and Simulation
  • Electrical and Electronic Engineering

Cite this

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title = "Fully depleted three-gate silicon MESFET on SOI material: analytical modeling and simulation",
abstract = "An innovative type of device for high-density and high-speed applications, three-gate (TG) SOI-MESFET, is proposed. The new design is expected to exhibit excellent immunity against short channel effects (SCEs) and leakage current. To investigate the superior subthreshold characteristics of the suggested device, a physically based analytical model for channel potential and threshold voltage is developed. The model is based on the analytical solution of the three-dimensional Poisson equation with suitable boundary conditions. Using the model, the design features for the important device parameters and bias condition are examined and compared with classical SOI-MESFET. The accuracy of the model is validated by comparing the analytical results with Silvaco simulation and experimental data.",
keywords = "3-D analytical model, Drain induced barrier lowering (DIBL), Potential distribution, Subthreshold current, TCAD simulation, Three-gate SOI-MESFET, Threshold voltage",
author = "Hossein Mohammadi and Huda Abdullah and Dee, {Chang Fu} and {N V Visvanathan}, {P. Susthitha Menon} and {Sadegh Amiri}, Iraj",
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language = "English",
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T2 - analytical modeling and simulation

AU - Mohammadi, Hossein

AU - Abdullah, Huda

AU - Dee, Chang Fu

AU - N V Visvanathan, P. Susthitha Menon

AU - Sadegh Amiri, Iraj

PY - 2019/1/1

Y1 - 2019/1/1

N2 - An innovative type of device for high-density and high-speed applications, three-gate (TG) SOI-MESFET, is proposed. The new design is expected to exhibit excellent immunity against short channel effects (SCEs) and leakage current. To investigate the superior subthreshold characteristics of the suggested device, a physically based analytical model for channel potential and threshold voltage is developed. The model is based on the analytical solution of the three-dimensional Poisson equation with suitable boundary conditions. Using the model, the design features for the important device parameters and bias condition are examined and compared with classical SOI-MESFET. The accuracy of the model is validated by comparing the analytical results with Silvaco simulation and experimental data.

AB - An innovative type of device for high-density and high-speed applications, three-gate (TG) SOI-MESFET, is proposed. The new design is expected to exhibit excellent immunity against short channel effects (SCEs) and leakage current. To investigate the superior subthreshold characteristics of the suggested device, a physically based analytical model for channel potential and threshold voltage is developed. The model is based on the analytical solution of the three-dimensional Poisson equation with suitable boundary conditions. Using the model, the design features for the important device parameters and bias condition are examined and compared with classical SOI-MESFET. The accuracy of the model is validated by comparing the analytical results with Silvaco simulation and experimental data.

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KW - Threshold voltage

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