Free carrier absorption loss on p-i-n and n-p-n silicon phase modulator at λ=1.3μm and λ=1.55μm

A. R. Hanim, H. Hazura, B. Mardiana, P. Susthitha Menon N V Visvanathan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The paper reports on the free carrier absorption loss associated with silicon phase modulator. Two structures are compared: p-i-n and n-p-n structure. The simulations are realized utilizing the 2-D semiconductor simulation package SILVACO. Simulations predict that both structures operate more efficiently at 1.3 μm in terms of free carrier absorption loss. At 1.3 μm, the calculated free carrier absorption loss for p-i-n structure is 0.1149 dB, while n-p-n structure suffers 0.3956 dB of loss. Structure-wise, n-p-n silicon phase modulator experience more free carrier absorption loss compared to p-i-n structure due to extra doping contact.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages351-354
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka
Duration: 28 Jun 201030 Jun 2010

Other

Other2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
CityMelaka
Period28/6/1030/6/10

Fingerprint

Silicon
Modulators
Doping (additives)
Semiconductor materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hanim, A. R., Hazura, H., Mardiana, B., & N V Visvanathan, P. S. M. (2010). Free carrier absorption loss on p-i-n and n-p-n silicon phase modulator at λ=1.3μm and λ=1.55μm. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 351-354). [5549520] https://doi.org/10.1109/SMELEC.2010.5549520

Free carrier absorption loss on p-i-n and n-p-n silicon phase modulator at λ=1.3μm and λ=1.55μm. / Hanim, A. R.; Hazura, H.; Mardiana, B.; N V Visvanathan, P. Susthitha Menon.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 351-354 5549520.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hanim, AR, Hazura, H, Mardiana, B & N V Visvanathan, PSM 2010, Free carrier absorption loss on p-i-n and n-p-n silicon phase modulator at λ=1.3μm and λ=1.55μm. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 5549520, pp. 351-354, 2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010, Melaka, 28/6/10. https://doi.org/10.1109/SMELEC.2010.5549520
Hanim AR, Hazura H, Mardiana B, N V Visvanathan PSM. Free carrier absorption loss on p-i-n and n-p-n silicon phase modulator at λ=1.3μm and λ=1.55μm. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 351-354. 5549520 https://doi.org/10.1109/SMELEC.2010.5549520
Hanim, A. R. ; Hazura, H. ; Mardiana, B. ; N V Visvanathan, P. Susthitha Menon. / Free carrier absorption loss on p-i-n and n-p-n silicon phase modulator at λ=1.3μm and λ=1.55μm. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. pp. 351-354
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