Formulation and simulation for electrical properties of a (5,3) single wall carbon nanotube

Javad Karamdel, M. T. Ahmadi, Burhanuddin Yeop Majlis, Chang Fu Dee, Razali Ismail

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Carbon Nano Tubes (CNTs) are potential candidate to be used in nano transistors and interconnection inside the ICs. In most of these applications, speed of the carriers is very important. Due to small sizes of CNTs, the mobility of electrons is ballistic. On the other hand because of the superabundant free electrons, most of CNTs are in the degenerate regime, where Boltzmann statistics can not be used. However different CNTs have various characteristics. In this research work we formulate and simulate the behavior of a (5, 3) Single Wall Carbon Nano Tube (SWCNT) by using Fermi-Dirac distribution function. Simulation results are in good agreement with the expected results of theoretical analysis. These results show that the E(k) relation of this SWCNT near the minimum energy is close to parabolic, and (Ef - E c) is a weak (logarithmic) function of carrier concentration, but varies linearly with temperature in the nondegenerate (ND) regime. However, in degenerate statistics, the Fermi energy is independent of temperature and is a strong function of carrier concentration.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages545-548
Number of pages4
DOIs
Publication statusPublished - 2008
Event2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor
Duration: 25 Nov 200827 Nov 2008

Other

Other2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
CityJohor Bahru, Johor
Period25/11/0827/11/08

Fingerprint

Carbon Nanotubes
Carbon nanotubes
Electric properties
Carbon
Carrier concentration
Statistics
Electrons
Ballistics
Fermi level
Distribution functions
Transistors
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Karamdel, J., Ahmadi, M. T., Yeop Majlis, B., Dee, C. F., & Ismail, R. (2008). Formulation and simulation for electrical properties of a (5,3) single wall carbon nanotube. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 545-548). [4770384] https://doi.org/10.1109/SMELEC.2008.4770384

Formulation and simulation for electrical properties of a (5,3) single wall carbon nanotube. / Karamdel, Javad; Ahmadi, M. T.; Yeop Majlis, Burhanuddin; Dee, Chang Fu; Ismail, Razali.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. p. 545-548 4770384.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Karamdel, J, Ahmadi, MT, Yeop Majlis, B, Dee, CF & Ismail, R 2008, Formulation and simulation for electrical properties of a (5,3) single wall carbon nanotube. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4770384, pp. 545-548, 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008, Johor Bahru, Johor, 25/11/08. https://doi.org/10.1109/SMELEC.2008.4770384
Karamdel J, Ahmadi MT, Yeop Majlis B, Dee CF, Ismail R. Formulation and simulation for electrical properties of a (5,3) single wall carbon nanotube. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. p. 545-548. 4770384 https://doi.org/10.1109/SMELEC.2008.4770384
Karamdel, Javad ; Ahmadi, M. T. ; Yeop Majlis, Burhanuddin ; Dee, Chang Fu ; Ismail, Razali. / Formulation and simulation for electrical properties of a (5,3) single wall carbon nanotube. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. pp. 545-548
@inproceedings{7817808984764b48ae9c6e3b11c014d1,
title = "Formulation and simulation for electrical properties of a (5,3) single wall carbon nanotube",
abstract = "Carbon Nano Tubes (CNTs) are potential candidate to be used in nano transistors and interconnection inside the ICs. In most of these applications, speed of the carriers is very important. Due to small sizes of CNTs, the mobility of electrons is ballistic. On the other hand because of the superabundant free electrons, most of CNTs are in the degenerate regime, where Boltzmann statistics can not be used. However different CNTs have various characteristics. In this research work we formulate and simulate the behavior of a (5, 3) Single Wall Carbon Nano Tube (SWCNT) by using Fermi-Dirac distribution function. Simulation results are in good agreement with the expected results of theoretical analysis. These results show that the E(k) relation of this SWCNT near the minimum energy is close to parabolic, and (Ef - E c) is a weak (logarithmic) function of carrier concentration, but varies linearly with temperature in the nondegenerate (ND) regime. However, in degenerate statistics, the Fermi energy is independent of temperature and is a strong function of carrier concentration.",
author = "Javad Karamdel and Ahmadi, {M. T.} and {Yeop Majlis}, Burhanuddin and Dee, {Chang Fu} and Razali Ismail",
year = "2008",
doi = "10.1109/SMELEC.2008.4770384",
language = "English",
isbn = "9781424425617",
pages = "545--548",
booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

}

TY - GEN

T1 - Formulation and simulation for electrical properties of a (5,3) single wall carbon nanotube

AU - Karamdel, Javad

AU - Ahmadi, M. T.

AU - Yeop Majlis, Burhanuddin

AU - Dee, Chang Fu

AU - Ismail, Razali

PY - 2008

Y1 - 2008

N2 - Carbon Nano Tubes (CNTs) are potential candidate to be used in nano transistors and interconnection inside the ICs. In most of these applications, speed of the carriers is very important. Due to small sizes of CNTs, the mobility of electrons is ballistic. On the other hand because of the superabundant free electrons, most of CNTs are in the degenerate regime, where Boltzmann statistics can not be used. However different CNTs have various characteristics. In this research work we formulate and simulate the behavior of a (5, 3) Single Wall Carbon Nano Tube (SWCNT) by using Fermi-Dirac distribution function. Simulation results are in good agreement with the expected results of theoretical analysis. These results show that the E(k) relation of this SWCNT near the minimum energy is close to parabolic, and (Ef - E c) is a weak (logarithmic) function of carrier concentration, but varies linearly with temperature in the nondegenerate (ND) regime. However, in degenerate statistics, the Fermi energy is independent of temperature and is a strong function of carrier concentration.

AB - Carbon Nano Tubes (CNTs) are potential candidate to be used in nano transistors and interconnection inside the ICs. In most of these applications, speed of the carriers is very important. Due to small sizes of CNTs, the mobility of electrons is ballistic. On the other hand because of the superabundant free electrons, most of CNTs are in the degenerate regime, where Boltzmann statistics can not be used. However different CNTs have various characteristics. In this research work we formulate and simulate the behavior of a (5, 3) Single Wall Carbon Nano Tube (SWCNT) by using Fermi-Dirac distribution function. Simulation results are in good agreement with the expected results of theoretical analysis. These results show that the E(k) relation of this SWCNT near the minimum energy is close to parabolic, and (Ef - E c) is a weak (logarithmic) function of carrier concentration, but varies linearly with temperature in the nondegenerate (ND) regime. However, in degenerate statistics, the Fermi energy is independent of temperature and is a strong function of carrier concentration.

UR - http://www.scopus.com/inward/record.url?scp=65949121378&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65949121378&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2008.4770384

DO - 10.1109/SMELEC.2008.4770384

M3 - Conference contribution

SN - 9781424425617

SP - 545

EP - 548

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

ER -