Fast fabrication of polyimide membrane on silicon wafer

Research output: Contribution to journalArticle

Abstract

Since its invention, polyimide (PI) has been widely used in micro-electro-mechanical system (MEMS) devices. For fabrication, the PI membrane, PI-2723 HD-Microsystems was used as the membrane material due to its Young's modulus of 2.7 GPa and its film thickness could easily be controlled by changing the speed of the spin coater system. The application PI as membrane structure on silicon wafers therefore gave a much better mechanical performance then conventional membranes made of silicon dioxide (SiO2) or silicon nitride (Si3N4) layers. The fabrication of PI membrane was the same as for SiO2 and Si3N4 membranes; the basic step was to etch a side of the silicon wafer <100> using wet anisotropic etching. This paper proposes an effective process for fabrication of PI membrane with f ast and little supervision. In this process, a dual step process was wet anisotropic etching of single crystal silicon <100> using pottasium hydroxyl (KOH) with different concentrations and temperature processes. For the first process, 45% KOH under boiling temperature was used to etch at least 90%-95% of the silicon. In the second process, the silicon was submerged in 45% KOH with temperature at 70°C-80°C to etch away the residual silicon until a clean and transparent PI membrane was achieved. Using this method, the fabrication of PI membrane could be generated fast.

Original languageEnglish
Pages (from-to)122-127
Number of pages6
JournalASM Science Journal
Volume6
Issue number2
Publication statusPublished - 2012

Fingerprint

polyimides
wafers
membranes
fabrication
silicon
etching
membrane structures
inventions
silicon nitrides
boiling
temperature
modulus of elasticity
film thickness
silicon dioxide
single crystals

Keywords

  • Anisotropic wet etching
  • MEMS
  • Microfabrication
  • PI-2723 HD-Microsystems
  • Polyimide membrane
  • Pottasium hydroxyl
  • Silicon dioxide

ASJC Scopus subject areas

  • General

Cite this

Fast fabrication of polyimide membrane on silicon wafer. / Sugandi, G.; Yeop Majlis, Burhanuddin.

In: ASM Science Journal, Vol. 6, No. 2, 2012, p. 122-127.

Research output: Contribution to journalArticle

@article{9e10338481dc4c61873b363f654fadbc,
title = "Fast fabrication of polyimide membrane on silicon wafer",
abstract = "Since its invention, polyimide (PI) has been widely used in micro-electro-mechanical system (MEMS) devices. For fabrication, the PI membrane, PI-2723 HD-Microsystems was used as the membrane material due to its Young's modulus of 2.7 GPa and its film thickness could easily be controlled by changing the speed of the spin coater system. The application PI as membrane structure on silicon wafers therefore gave a much better mechanical performance then conventional membranes made of silicon dioxide (SiO2) or silicon nitride (Si3N4) layers. The fabrication of PI membrane was the same as for SiO2 and Si3N4 membranes; the basic step was to etch a side of the silicon wafer <100> using wet anisotropic etching. This paper proposes an effective process for fabrication of PI membrane with f ast and little supervision. In this process, a dual step process was wet anisotropic etching of single crystal silicon <100> using pottasium hydroxyl (KOH) with different concentrations and temperature processes. For the first process, 45{\%} KOH under boiling temperature was used to etch at least 90{\%}-95{\%} of the silicon. In the second process, the silicon was submerged in 45{\%} KOH with temperature at 70°C-80°C to etch away the residual silicon until a clean and transparent PI membrane was achieved. Using this method, the fabrication of PI membrane could be generated fast.",
keywords = "Anisotropic wet etching, MEMS, Microfabrication, PI-2723 HD-Microsystems, Polyimide membrane, Pottasium hydroxyl, Silicon dioxide",
author = "G. Sugandi and {Yeop Majlis}, Burhanuddin",
year = "2012",
language = "English",
volume = "6",
pages = "122--127",
journal = "ASM Science Journal",
issn = "1823-6782",
publisher = "Akademi Sains Malaysia",
number = "2",

}

TY - JOUR

T1 - Fast fabrication of polyimide membrane on silicon wafer

AU - Sugandi, G.

AU - Yeop Majlis, Burhanuddin

PY - 2012

Y1 - 2012

N2 - Since its invention, polyimide (PI) has been widely used in micro-electro-mechanical system (MEMS) devices. For fabrication, the PI membrane, PI-2723 HD-Microsystems was used as the membrane material due to its Young's modulus of 2.7 GPa and its film thickness could easily be controlled by changing the speed of the spin coater system. The application PI as membrane structure on silicon wafers therefore gave a much better mechanical performance then conventional membranes made of silicon dioxide (SiO2) or silicon nitride (Si3N4) layers. The fabrication of PI membrane was the same as for SiO2 and Si3N4 membranes; the basic step was to etch a side of the silicon wafer <100> using wet anisotropic etching. This paper proposes an effective process for fabrication of PI membrane with f ast and little supervision. In this process, a dual step process was wet anisotropic etching of single crystal silicon <100> using pottasium hydroxyl (KOH) with different concentrations and temperature processes. For the first process, 45% KOH under boiling temperature was used to etch at least 90%-95% of the silicon. In the second process, the silicon was submerged in 45% KOH with temperature at 70°C-80°C to etch away the residual silicon until a clean and transparent PI membrane was achieved. Using this method, the fabrication of PI membrane could be generated fast.

AB - Since its invention, polyimide (PI) has been widely used in micro-electro-mechanical system (MEMS) devices. For fabrication, the PI membrane, PI-2723 HD-Microsystems was used as the membrane material due to its Young's modulus of 2.7 GPa and its film thickness could easily be controlled by changing the speed of the spin coater system. The application PI as membrane structure on silicon wafers therefore gave a much better mechanical performance then conventional membranes made of silicon dioxide (SiO2) or silicon nitride (Si3N4) layers. The fabrication of PI membrane was the same as for SiO2 and Si3N4 membranes; the basic step was to etch a side of the silicon wafer <100> using wet anisotropic etching. This paper proposes an effective process for fabrication of PI membrane with f ast and little supervision. In this process, a dual step process was wet anisotropic etching of single crystal silicon <100> using pottasium hydroxyl (KOH) with different concentrations and temperature processes. For the first process, 45% KOH under boiling temperature was used to etch at least 90%-95% of the silicon. In the second process, the silicon was submerged in 45% KOH with temperature at 70°C-80°C to etch away the residual silicon until a clean and transparent PI membrane was achieved. Using this method, the fabrication of PI membrane could be generated fast.

KW - Anisotropic wet etching

KW - MEMS

KW - Microfabrication

KW - PI-2723 HD-Microsystems

KW - Polyimide membrane

KW - Pottasium hydroxyl

KW - Silicon dioxide

UR - http://www.scopus.com/inward/record.url?scp=84877682710&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877682710&partnerID=8YFLogxK

M3 - Article

VL - 6

SP - 122

EP - 127

JO - ASM Science Journal

JF - ASM Science Journal

SN - 1823-6782

IS - 2

ER -