Fabrication of transparent bistable switching memory device using plasmapolymerized hexamethyldisiloxane layers with embedded graphene quantum dots

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3 Citations (Scopus)

Abstract

We demonstrated the feasibility to fabricate two-terminal non-volatile-memory (NVM) devices using pulsed radio frequency (rf) plasma polymerization and simple solution route. The two-terminal NVM devices were fabricated based on a metal-insulator-metal structure consisting of graphene quantum dots (GQDs) embedded in hexamethyldisiloxane dielectric layers. The charge trapping layer, GQDs and the top contacts were formed by spin coating and spray coating methods. Whereas, the dielectric layers were deposited using pulsed rf plasma polymerization. The current-voltage curves showed a bistable current behavior with the presence of hysteresis window. The fabricated NVM memory devices were reprogrammable when the endurance test was performed and stable up to 1 × 104 s cycles with a distinct ON/OFF ratio of 104. Based on the obtained I-V characteristics, Schottky emission, Poole-Frenkel emission, trapped-charge limited-current and space-charge-limited current were proposed as the dominant conduction mechanisms for the fabricated NVM devices.

Original languageEnglish
Pages (from-to)45-50
Number of pages6
JournalThin Solid Films
Volume645
DOIs
Publication statusPublished - 1 Jan 2018

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Graphene
Semiconductor quantum dots
graphene
quantum dots
Data storage equipment
Fabrication
fabrication
Plasma polymerization
coating
radio frequencies
polymerization
Metals
Charge trapping
endurance
Spin coating
Electric space charge
metals
sprayers
Hysteresis

Keywords

  • Bistable switching
  • Conduction mechanisms
  • Graphene quantum dot
  • Hexamethyldisiloxane
  • Plasma polymerization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Fabrication of transparent bistable switching memory device using plasmapolymerized hexamethyldisiloxane layers with embedded graphene quantum dots",
abstract = "We demonstrated the feasibility to fabricate two-terminal non-volatile-memory (NVM) devices using pulsed radio frequency (rf) plasma polymerization and simple solution route. The two-terminal NVM devices were fabricated based on a metal-insulator-metal structure consisting of graphene quantum dots (GQDs) embedded in hexamethyldisiloxane dielectric layers. The charge trapping layer, GQDs and the top contacts were formed by spin coating and spray coating methods. Whereas, the dielectric layers were deposited using pulsed rf plasma polymerization. The current-voltage curves showed a bistable current behavior with the presence of hysteresis window. The fabricated NVM memory devices were reprogrammable when the endurance test was performed and stable up to 1 × 104 s cycles with a distinct ON/OFF ratio of 104. Based on the obtained I-V characteristics, Schottky emission, Poole-Frenkel emission, trapped-charge limited-current and space-charge-limited current were proposed as the dominant conduction mechanisms for the fabricated NVM devices.",
keywords = "Bistable switching, Conduction mechanisms, Graphene quantum dot, Hexamethyldisiloxane, Plasma polymerization",
author = "Ooi, {Poh Choon} and {Mohd Razip Wee}, {Mohd Farhanulhakim} and Dee, {Chang Fu} and Yap, {Chi Chin} and {Mat Salleh}, Muhamad and {Yeop Majlis}, Burhanuddin",
year = "2018",
month = "1",
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doi = "10.1016/j.tsf.2017.10.044",
language = "English",
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T1 - Fabrication of transparent bistable switching memory device using plasmapolymerized hexamethyldisiloxane layers with embedded graphene quantum dots

AU - Ooi, Poh Choon

AU - Mohd Razip Wee, Mohd Farhanulhakim

AU - Dee, Chang Fu

AU - Yap, Chi Chin

AU - Mat Salleh, Muhamad

AU - Yeop Majlis, Burhanuddin

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We demonstrated the feasibility to fabricate two-terminal non-volatile-memory (NVM) devices using pulsed radio frequency (rf) plasma polymerization and simple solution route. The two-terminal NVM devices were fabricated based on a metal-insulator-metal structure consisting of graphene quantum dots (GQDs) embedded in hexamethyldisiloxane dielectric layers. The charge trapping layer, GQDs and the top contacts were formed by spin coating and spray coating methods. Whereas, the dielectric layers were deposited using pulsed rf plasma polymerization. The current-voltage curves showed a bistable current behavior with the presence of hysteresis window. The fabricated NVM memory devices were reprogrammable when the endurance test was performed and stable up to 1 × 104 s cycles with a distinct ON/OFF ratio of 104. Based on the obtained I-V characteristics, Schottky emission, Poole-Frenkel emission, trapped-charge limited-current and space-charge-limited current were proposed as the dominant conduction mechanisms for the fabricated NVM devices.

AB - We demonstrated the feasibility to fabricate two-terminal non-volatile-memory (NVM) devices using pulsed radio frequency (rf) plasma polymerization and simple solution route. The two-terminal NVM devices were fabricated based on a metal-insulator-metal structure consisting of graphene quantum dots (GQDs) embedded in hexamethyldisiloxane dielectric layers. The charge trapping layer, GQDs and the top contacts were formed by spin coating and spray coating methods. Whereas, the dielectric layers were deposited using pulsed rf plasma polymerization. The current-voltage curves showed a bistable current behavior with the presence of hysteresis window. The fabricated NVM memory devices were reprogrammable when the endurance test was performed and stable up to 1 × 104 s cycles with a distinct ON/OFF ratio of 104. Based on the obtained I-V characteristics, Schottky emission, Poole-Frenkel emission, trapped-charge limited-current and space-charge-limited current were proposed as the dominant conduction mechanisms for the fabricated NVM devices.

KW - Bistable switching

KW - Conduction mechanisms

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KW - Hexamethyldisiloxane

KW - Plasma polymerization

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