Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes

Mohd Ambri Mohamed, Nobuhito Inami, Eiji Shikoh, Yoshiyuki Yamamoto, Hidenobu Hori, Akihiko Fujiwara

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We describe an alternative method for realizing a carbon nanotube spin field-effect transistor device by the direct synthesis of single-walled carbon nanotubes (SWNTs) on substrates by alcohol catalytic chemical vapor deposition. We observed hysteretic magnetoresistance (MR) at low temperatures due to spin-dependent transport. In these devices, the maximum ratio in resistance variation of MR was found to be 1.8%.

Original languageEnglish
Article number025019
JournalScience and Technology of Advanced Materials
Volume9
Issue number2
DOIs
Publication statusPublished - 1 Apr 2008
Externally publishedYes

Fingerprint

Magnetoelectronics
Single-walled carbon nanotubes (SWCN)
Magnetoresistance
Fabrication
Electrodes
Carbon Nanotubes
Field effect transistors
Chemical vapor deposition
Carbon nanotubes
Alcohols
Substrates
Temperature

Keywords

  • Alcohol catalytic chemical vapor deposition (ACCVD)
  • Direct synthesis
  • Magnetoresistance (MR)
  • Single-walled carbon nanotubes (SWNTs)
  • Spintronics device

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes. / Mohamed, Mohd Ambri; Inami, Nobuhito; Shikoh, Eiji; Yamamoto, Yoshiyuki; Hori, Hidenobu; Fujiwara, Akihiko.

In: Science and Technology of Advanced Materials, Vol. 9, No. 2, 025019, 01.04.2008.

Research output: Contribution to journalArticle

Mohamed, Mohd Ambri ; Inami, Nobuhito ; Shikoh, Eiji ; Yamamoto, Yoshiyuki ; Hori, Hidenobu ; Fujiwara, Akihiko. / Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes. In: Science and Technology of Advanced Materials. 2008 ; Vol. 9, No. 2.
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