Abstract
In this paper, the fabrication of monolithic Wheatstone bridge circuit on piezoresistive microcantilever sensor is presented. The development of the device is realized through silicon micromachining technology on silicon substrate through three major fabrication steps including silicon piezoresistive microcantilever formation, aluminum deposition of Wheatstone bridge interconnections and microcantilever release. The electrical discontinuity of interconnections which is one of the major issues encountered in the fabrication process is discussed and analyzed. Deposition of proper thickness of metal interconnection layers through metal evaporation process accompanied with annealing process at low temperature ensures complete electrical connections in the monolithic Wheatstone bridge configuration. Measurement of the fabricated Wheatstone bridge circuit shows a good agreement between theoretical and experimental values indicating successful fabrication of the device. Fabrication of piezoresistive microcantilever structure integrated with monolithic Wheatstone bridge circuit with resistance values in the range of 1 to 9 kΩ has been successfully realized using silicon micromachining technology.
| Original language | English |
|---|---|
| Title of host publication | Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Print) | 9781479986255 |
| DOIs | |
| Publication status | Published - 16 Jul 2015 |
| Event | 17th Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2015 - Montpellier, France Duration: 27 Apr 2015 → 30 Apr 2015 |
Other
| Other | 17th Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2015 |
|---|---|
| Country | France |
| City | Montpellier |
| Period | 27/4/15 → 30/4/15 |
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Keywords
- MEMS piezoresistive microcantilever
- metal evaporation
- Wheatstone bridge circuit
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Electrical and Electronic Engineering
Cite this
Fabrication of monolithic Wheatstone bridge circuit for piezoresistive microcantilever sensor. / Rahim, Rosminazuin Ab; Nordin, Anis Nurashikin; Malik, Noreha Abd; Bais, Badariah; Yeop Majlis, Burhanuddin.
Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7160998.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabrication of monolithic Wheatstone bridge circuit for piezoresistive microcantilever sensor
AU - Rahim, Rosminazuin Ab
AU - Nordin, Anis Nurashikin
AU - Malik, Noreha Abd
AU - Bais, Badariah
AU - Yeop Majlis, Burhanuddin
PY - 2015/7/16
Y1 - 2015/7/16
N2 - In this paper, the fabrication of monolithic Wheatstone bridge circuit on piezoresistive microcantilever sensor is presented. The development of the device is realized through silicon micromachining technology on silicon substrate through three major fabrication steps including silicon piezoresistive microcantilever formation, aluminum deposition of Wheatstone bridge interconnections and microcantilever release. The electrical discontinuity of interconnections which is one of the major issues encountered in the fabrication process is discussed and analyzed. Deposition of proper thickness of metal interconnection layers through metal evaporation process accompanied with annealing process at low temperature ensures complete electrical connections in the monolithic Wheatstone bridge configuration. Measurement of the fabricated Wheatstone bridge circuit shows a good agreement between theoretical and experimental values indicating successful fabrication of the device. Fabrication of piezoresistive microcantilever structure integrated with monolithic Wheatstone bridge circuit with resistance values in the range of 1 to 9 kΩ has been successfully realized using silicon micromachining technology.
AB - In this paper, the fabrication of monolithic Wheatstone bridge circuit on piezoresistive microcantilever sensor is presented. The development of the device is realized through silicon micromachining technology on silicon substrate through three major fabrication steps including silicon piezoresistive microcantilever formation, aluminum deposition of Wheatstone bridge interconnections and microcantilever release. The electrical discontinuity of interconnections which is one of the major issues encountered in the fabrication process is discussed and analyzed. Deposition of proper thickness of metal interconnection layers through metal evaporation process accompanied with annealing process at low temperature ensures complete electrical connections in the monolithic Wheatstone bridge configuration. Measurement of the fabricated Wheatstone bridge circuit shows a good agreement between theoretical and experimental values indicating successful fabrication of the device. Fabrication of piezoresistive microcantilever structure integrated with monolithic Wheatstone bridge circuit with resistance values in the range of 1 to 9 kΩ has been successfully realized using silicon micromachining technology.
KW - MEMS piezoresistive microcantilever
KW - metal evaporation
KW - Wheatstone bridge circuit
UR - http://www.scopus.com/inward/record.url?scp=84945957782&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84945957782&partnerID=8YFLogxK
U2 - 10.1109/DTIP.2015.7160998
DO - 10.1109/DTIP.2015.7160998
M3 - Conference contribution
SN - 9781479986255
BT - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -