Abstract
Organic photodetector of TiO2/Porphyrin has been fabricated and its performance has been tested in dark and under various illumination of light intensity from 20 to 100 mWcm-2. Four samples of porphyrin films have been used in the device, namely 1, 3, 5 and 7 times spin coating. TiO2 films were deposited onto ITO covered glass substrate by controlled hydrolysis technique assisted with spin coating technique. Then porphyrin film was deposited on TiO2 using spin coating technique. The films of TiO 2/porphyrin has absorbance maximum at 660 nm, which is in the red region. An aluminium electrode was prepared on top of porphyrin films by electron beam evaporation technique. The device shows rectification behaviour in the dark and shows photosensitization effect under illumination of visible lights. The device with 3 times spin coating of porphyrin shows the highest Jsc of 1.02 μAcm-2 and Voc of 520 mV.
| Original language | English |
|---|---|
| Pages (from-to) | 1760-1764 |
| Number of pages | 5 |
| Journal | Journal of Optoelectronics and Advanced Materials |
| Volume | 11 |
| Issue number | 11 |
| Publication status | Published - Nov 2009 |
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Keywords
- Photodetector
- Photosensitizing
- Porphyrin
- TiO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
Fabrication and performance studies of TiO2 and porphyrin heterojunction based organic photodetector. / Supriyanto, Agus; Triyana, Kuwat; Roto; Kusminarto; Mat Salleh, Muhamad; Akrajas, Ali Umar.
In: Journal of Optoelectronics and Advanced Materials, Vol. 11, No. 11, 11.2009, p. 1760-1764.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication and performance studies of TiO2 and porphyrin heterojunction based organic photodetector
AU - Supriyanto, Agus
AU - Triyana, Kuwat
AU - Roto,
AU - Kusminarto,
AU - Mat Salleh, Muhamad
AU - Akrajas, Ali Umar
PY - 2009/11
Y1 - 2009/11
N2 - Organic photodetector of TiO2/Porphyrin has been fabricated and its performance has been tested in dark and under various illumination of light intensity from 20 to 100 mWcm-2. Four samples of porphyrin films have been used in the device, namely 1, 3, 5 and 7 times spin coating. TiO2 films were deposited onto ITO covered glass substrate by controlled hydrolysis technique assisted with spin coating technique. Then porphyrin film was deposited on TiO2 using spin coating technique. The films of TiO 2/porphyrin has absorbance maximum at 660 nm, which is in the red region. An aluminium electrode was prepared on top of porphyrin films by electron beam evaporation technique. The device shows rectification behaviour in the dark and shows photosensitization effect under illumination of visible lights. The device with 3 times spin coating of porphyrin shows the highest Jsc of 1.02 μAcm-2 and Voc of 520 mV.
AB - Organic photodetector of TiO2/Porphyrin has been fabricated and its performance has been tested in dark and under various illumination of light intensity from 20 to 100 mWcm-2. Four samples of porphyrin films have been used in the device, namely 1, 3, 5 and 7 times spin coating. TiO2 films were deposited onto ITO covered glass substrate by controlled hydrolysis technique assisted with spin coating technique. Then porphyrin film was deposited on TiO2 using spin coating technique. The films of TiO 2/porphyrin has absorbance maximum at 660 nm, which is in the red region. An aluminium electrode was prepared on top of porphyrin films by electron beam evaporation technique. The device shows rectification behaviour in the dark and shows photosensitization effect under illumination of visible lights. The device with 3 times spin coating of porphyrin shows the highest Jsc of 1.02 μAcm-2 and Voc of 520 mV.
KW - Photodetector
KW - Photosensitizing
KW - Porphyrin
KW - TiO
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UR - http://www.scopus.com/inward/citedby.url?scp=75949117917&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:75949117917
VL - 11
SP - 1760
EP - 1764
JO - Journal of Optoelectronics and Advanced Materials
JF - Journal of Optoelectronics and Advanced Materials
SN - 1454-4164
IS - 11
ER -