Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications

Yu Sheng Chiu, Quang Ho Luc, Yueh Chin Lin, Jui Chien Huang, Chang Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang

Research output: Contribution to journalArticle

Abstract

A plasma enhanced atomic layer deposition (PEALD) HfO2/AlN dielectric stack was used as the gate dielectric for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) for high-frequency power device applications. The capacitance-voltage (C-V) curves of the HfO2/AlN/GaN MOS capacitor (MOSCAP) showed a small frequency dispersion along with a very small hysteresis (>50 mV). Moreover, the interface trap density (Dit) was calculated to be 2.7 ' 1011 cm%2 V%1 s%1 at 150 °C. Using PEALD-AlN as the interfacial passivation layer (IPL), the drain current of the HfO2/AlN MOS-HEMTs increased by about 46% and the gate leakage current decreased by six orders of magnitude as compared with those of the conventional Schottky gate AlGaN/GaN HEMTs processed using the same epitaxial wafer. The 0.3-µm-gate-length HfO2/AlN/AlGaN/GaN MOS-HEMTs demonstrated a 2.88 W/mm output power, a 23 dB power gain, a 30.2% power-added efficiency at 2.4 GHz, and an improved device linearity as compared with the conventional AlGaN/GaN HEMTs. The third-order intercept point at the output (OIP3) of the MOS-HEMTs was 28 4 as compared with that of 26 5 for the conventional GaN HEMTs Overall the MOS-HEMTs with a HfO /AlN gate stack showed good potential for high-linearity RF power device applications.

Original languageEnglish
Article number094101
JournalJapanese Journal of Applied Physics
Volume56
Issue number9
DOIs
Publication statusPublished - 2017

Fingerprint

Atomic layer deposition
High electron mobility transistors
atomic layer epitaxy
high electron mobility transistors
metal oxides
Plasmas
metal oxide semiconductors
Oxides
evaluation
Metals
linearity
MOS capacitors
power gain
output
Gate dielectrics
Drain current
power efficiency
Passivation
Leakage currents
passivity

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications. / Chiu, Yu Sheng; Luc, Quang Ho; Lin, Yueh Chin; Huang, Jui Chien; Dee, Chang Fu; Yeop Majlis, Burhanuddin; Chang, Edward Yi.

In: Japanese Journal of Applied Physics, Vol. 56, No. 9, 094101, 2017.

Research output: Contribution to journalArticle

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title = "Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications",
abstract = "A plasma enhanced atomic layer deposition (PEALD) HfO2/AlN dielectric stack was used as the gate dielectric for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) for high-frequency power device applications. The capacitance-voltage (C-V) curves of the HfO2/AlN/GaN MOS capacitor (MOSCAP) showed a small frequency dispersion along with a very small hysteresis (>50 mV). Moreover, the interface trap density (Dit) was calculated to be 2.7 ' 1011 cm{\%}2 V{\%}1 s{\%}1 at 150 °C. Using PEALD-AlN as the interfacial passivation layer (IPL), the drain current of the HfO2/AlN MOS-HEMTs increased by about 46{\%} and the gate leakage current decreased by six orders of magnitude as compared with those of the conventional Schottky gate AlGaN/GaN HEMTs processed using the same epitaxial wafer. The 0.3-µm-gate-length HfO2/AlN/AlGaN/GaN MOS-HEMTs demonstrated a 2.88 W/mm output power, a 23 dB power gain, a 30.2{\%} power-added efficiency at 2.4 GHz, and an improved device linearity as compared with the conventional AlGaN/GaN HEMTs. The third-order intercept point at the output (OIP3) of the MOS-HEMTs was 28 4 as compared with that of 26 5 for the conventional GaN HEMTs Overall the MOS-HEMTs with a HfO /AlN gate stack showed good potential for high-linearity RF power device applications.",
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AU - Dee, Chang Fu

AU - Yeop Majlis, Burhanuddin

AU - Chang, Edward Yi

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