Etching behavior of poly(vinylidene fluoride) thin films irradiated with ion beams - Effect of irradiated ions and pretreatment

Tetsuya Yamaki, Rosiah Rohani, Hiroshi Koshikawa, Shuichi Takahashi, Shin Hasegawa, Masaharu Asano, Kay Obbe Voss, Reinhard Neumann, Yasunari Maekawa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Poly (vinylidene fluoride) thin films irradiated with four kinds of ion beams were exposed to a 9 M KOH aqueous solution after their storage in air for 30 or 90 days at different temperatures. According to the conductometry, the heating at 120°C was found to enhance the etch rate in the latent track without changing that in the bulk, thereby enabling us to obtain very high etching sensitivity for the preparation of nano-sized through-pores. The formation of hydroperoxides during this pretreatment should facilitate the introduction of the etching agent to improve etchability. Additionally, the irradiation of higher-LET ions, causing each track to contain more activated sites (like radicals), was preferable to achieve high sensitivity of the etching.

Original languageEnglish
Pages (from-to)273-276
Number of pages4
JournalKobunshi Ronbunshu
Volume65
Issue number3
DOIs
Publication statusPublished - Mar 2008
Externally publishedYes

Fingerprint

etching
fluoride
Ion beams
Etching
Ions
Thin films
ion
Hydrogen Peroxide
irradiation
aqueous solution
Irradiation
heating
Heating
air
Air
polyvinylidene fluoride
effect
temperature
Temperature

Keywords

  • Conductometry
  • Etching
  • High energy ion beam
  • Latent track
  • Poly(vinylidene fluoride)

ASJC Scopus subject areas

  • Polymers and Plastics
  • Environmental Science(all)
  • Materials Science (miscellaneous)
  • Chemical Engineering (miscellaneous)
  • Ceramics and Composites

Cite this

Etching behavior of poly(vinylidene fluoride) thin films irradiated with ion beams - Effect of irradiated ions and pretreatment. / Yamaki, Tetsuya; Rohani, Rosiah; Koshikawa, Hiroshi; Takahashi, Shuichi; Hasegawa, Shin; Asano, Masaharu; Voss, Kay Obbe; Neumann, Reinhard; Maekawa, Yasunari.

In: Kobunshi Ronbunshu, Vol. 65, No. 3, 03.2008, p. 273-276.

Research output: Contribution to journalArticle

Yamaki, T, Rohani, R, Koshikawa, H, Takahashi, S, Hasegawa, S, Asano, M, Voss, KO, Neumann, R & Maekawa, Y 2008, 'Etching behavior of poly(vinylidene fluoride) thin films irradiated with ion beams - Effect of irradiated ions and pretreatment', Kobunshi Ronbunshu, vol. 65, no. 3, pp. 273-276. https://doi.org/10.1295/koron.65.273
Yamaki, Tetsuya ; Rohani, Rosiah ; Koshikawa, Hiroshi ; Takahashi, Shuichi ; Hasegawa, Shin ; Asano, Masaharu ; Voss, Kay Obbe ; Neumann, Reinhard ; Maekawa, Yasunari. / Etching behavior of poly(vinylidene fluoride) thin films irradiated with ion beams - Effect of irradiated ions and pretreatment. In: Kobunshi Ronbunshu. 2008 ; Vol. 65, No. 3. pp. 273-276.
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AU - Hasegawa, Shin

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AU - Voss, Kay Obbe

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