Epitaxial growth of high-quality Ge films on nanostructured silicon substrates

G. Vanamu, A. K. Datye, Saleem H. Zaidi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Low (∼ 105 cm-2) defect density, thick (∼10 μm) epitaxially grown Ge films on nanostructured and planar silicon substrates using chemical vapor deposition are reported. The structural morphology of Ge films was evaluated using scanning electron microscopy, transmission electron microscopy, and high resolution x-ray diffraction measurements. The surface defect density was measured by counting etch pits. The growth quality of Ge films was significantly superior on nanostructured surfaces relative to the planar as demonstrated by (a) reduction in defect density from ∼6× 108 cm-2 for planar to ∼5× 105 cm-2, (b) reduction in Δω full width half maximum peaks of the reciprocal space maps of Ge epilayers from 373 arc sec on planar (unpatterned) to 93 arc sec on the nanostructured surfaces, and (c) the elimination of crosshatch pattern characteristic of planar surface growth.

Original languageEnglish
Article number204104
JournalApplied Physics Letters
Volume88
Issue number20
DOIs
Publication statusPublished - 15 May 2006
Externally publishedYes

Fingerprint

silicon
arcs
defects
surface defects
elimination
counting
x ray diffraction
vapor deposition
transmission electron microscopy
scanning electron microscopy
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial growth of high-quality Ge films on nanostructured silicon substrates. / Vanamu, G.; Datye, A. K.; Zaidi, Saleem H.

In: Applied Physics Letters, Vol. 88, No. 20, 204104, 15.05.2006.

Research output: Contribution to journalArticle

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