Enhanced thermoelectric properties of bismuth telluride–organic hybrid films via graphene doping

Airul Azha Abd Rahman, Ali Umar Akrajas, Xiaomei Chen, Muhamad Mat Salleh, Munetaka Oyama

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The thermoelectric properties of graphene-doped bismuth telluride–PEDOT:PSS–glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS–glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m−1 K−2) and 10 μV/K (and 19.5 μW m−1 K−2), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50 Ω). The new thermoelectric device is potential for fueling a low-powered electronic device.

Original languageEnglish
Article number133
Pages (from-to)1-8
Number of pages8
JournalApplied Physics A: Materials Science and Processing
Volume122
Issue number2
DOIs
Publication statusPublished - 1 Feb 2016

Fingerprint

Bismuth
Graphite
Graphene
Doping (additives)
Fueling
Coating techniques
Seebeck coefficient
Spin coating
Thermocouples
Hybrid systems

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

Cite this

Enhanced thermoelectric properties of bismuth telluride–organic hybrid films via graphene doping. / Rahman, Airul Azha Abd; Akrajas, Ali Umar; Chen, Xiaomei; Mat Salleh, Muhamad; Oyama, Munetaka.

In: Applied Physics A: Materials Science and Processing, Vol. 122, No. 2, 133, 01.02.2016, p. 1-8.

Research output: Contribution to journalArticle

@article{f69577dbcfd14ff2a08e7d9d6f96dc6a,
title = "Enhanced thermoelectric properties of bismuth telluride–organic hybrid films via graphene doping",
abstract = "The thermoelectric properties of graphene-doped bismuth telluride–PEDOT:PSS–glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS–glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt{\%} into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt{\%} for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt{\%} of graphene, is 20 μV/K (and 160 μW m−1 K−2) and 10 μV/K (and 19.5 μW m−1 K−2), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50 Ω). The new thermoelectric device is potential for fueling a low-powered electronic device.",
author = "Rahman, {Airul Azha Abd} and Akrajas, {Ali Umar} and Xiaomei Chen and {Mat Salleh}, Muhamad and Munetaka Oyama",
year = "2016",
month = "2",
day = "1",
doi = "10.1007/s00339-016-9659-9",
language = "English",
volume = "122",
pages = "1--8",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Heidelberg",
number = "2",

}

TY - JOUR

T1 - Enhanced thermoelectric properties of bismuth telluride–organic hybrid films via graphene doping

AU - Rahman, Airul Azha Abd

AU - Akrajas, Ali Umar

AU - Chen, Xiaomei

AU - Mat Salleh, Muhamad

AU - Oyama, Munetaka

PY - 2016/2/1

Y1 - 2016/2/1

N2 - The thermoelectric properties of graphene-doped bismuth telluride–PEDOT:PSS–glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS–glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m−1 K−2) and 10 μV/K (and 19.5 μW m−1 K−2), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50 Ω). The new thermoelectric device is potential for fueling a low-powered electronic device.

AB - The thermoelectric properties of graphene-doped bismuth telluride–PEDOT:PSS–glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS–glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m−1 K−2) and 10 μV/K (and 19.5 μW m−1 K−2), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50 Ω). The new thermoelectric device is potential for fueling a low-powered electronic device.

UR - http://www.scopus.com/inward/record.url?scp=84957955297&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957955297&partnerID=8YFLogxK

U2 - 10.1007/s00339-016-9659-9

DO - 10.1007/s00339-016-9659-9

M3 - Article

AN - SCOPUS:84957955297

VL - 122

SP - 1

EP - 8

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 2

M1 - 133

ER -