Enhanced photoelectrochemical performance of Z-scheme g-C3N4/BiVO4 photocatalyst

Javad Safaei, Habib Ullah, Nurul Aida Mohamed, Mohamad Firdaus Mohamad Noh, Mohd Fairus Soh, Asif A. Tahir, Norasikin Ahmad Ludin, Mohd. Adib Ibrahim, Wan Isahak Wan Nor Roslam, Mohd Asri Mat Teridi

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

BiVO4 is a considerably promising semiconductor for photoelectrochemical water splitting due to its stability, low cost and moderate band gap. In this research, g-C3N4 was proposed in Z-scheme configuration which boosted the performance of BiVO4 up to four times. The experimental observations were counterchecked with Density Functional Theory (DFT) simulations. A TiO2/BiVO4 heterojunction was developed and its performance was compared with that of g-C3N4/BiVO4. The photocurrent for g-C3N4/BiVO4 was 0.42 mAcm−2 at 1.23 V vs. RHE which was the highest among g-C3N4 based Z-scheme heterojunction devices. Lower charge transfer resistance, higher light absorption and more oxygen vacancy sites were observed for the g-C3N4 based heterojunction. The simulated results attested that g-C3N4 and BiVO4 formed a van der Waals type heterojunction, where an internal electric field facilitated the separation of electron/hole pair at g-C3N4/BiVO4 interface which further restrained the carrier recombination. Both the valence and conduction band edge positions of g-C3N4 and BiVO4 changed with the Fermi energy level. The resulted heterojunction had small effective masses of electrons (0.01 me) and holes (0.10 me) with ideal band edge positions where both CBM and VBM were well above and below the redox potential of water.

Original languageEnglish
Pages (from-to)296-310
Number of pages15
JournalApplied Catalysis B: Environmental
Volume234
DOIs
Publication statusPublished - 6 Oct 2018

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Photocatalysts
Heterojunctions
electron
redox potential
recombination
water
oxygen
cost
Electrons
simulation
energy
Oxygen vacancies
Valence bands
Fermi level
Conduction bands
Photocurrents
Light absorption
Electron energy levels
Density functional theory
Charge transfer

Keywords

  • Bismuth vanadate
  • Graphitic carbon nitride
  • Titanium dioxide
  • Z-Scheme

ASJC Scopus subject areas

  • Catalysis
  • Environmental Science(all)
  • Process Chemistry and Technology

Cite this

Enhanced photoelectrochemical performance of Z-scheme g-C3N4/BiVO4 photocatalyst. / Safaei, Javad; Ullah, Habib; Mohamed, Nurul Aida; Mohamad Noh, Mohamad Firdaus; Soh, Mohd Fairus; Tahir, Asif A.; Ahmad Ludin, Norasikin; Ibrahim, Mohd. Adib; Wan Nor Roslam, Wan Isahak; Mat Teridi, Mohd Asri.

In: Applied Catalysis B: Environmental, Vol. 234, 06.10.2018, p. 296-310.

Research output: Contribution to journalArticle

Safaei, Javad ; Ullah, Habib ; Mohamed, Nurul Aida ; Mohamad Noh, Mohamad Firdaus ; Soh, Mohd Fairus ; Tahir, Asif A. ; Ahmad Ludin, Norasikin ; Ibrahim, Mohd. Adib ; Wan Nor Roslam, Wan Isahak ; Mat Teridi, Mohd Asri. / Enhanced photoelectrochemical performance of Z-scheme g-C3N4/BiVO4 photocatalyst. In: Applied Catalysis B: Environmental. 2018 ; Vol. 234. pp. 296-310.
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AU - Tahir, Asif A.

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AU - Wan Nor Roslam, Wan Isahak

AU - Mat Teridi, Mohd Asri

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AB - BiVO4 is a considerably promising semiconductor for photoelectrochemical water splitting due to its stability, low cost and moderate band gap. In this research, g-C3N4 was proposed in Z-scheme configuration which boosted the performance of BiVO4 up to four times. The experimental observations were counterchecked with Density Functional Theory (DFT) simulations. A TiO2/BiVO4 heterojunction was developed and its performance was compared with that of g-C3N4/BiVO4. The photocurrent for g-C3N4/BiVO4 was 0.42 mAcm−2 at 1.23 V vs. RHE which was the highest among g-C3N4 based Z-scheme heterojunction devices. Lower charge transfer resistance, higher light absorption and more oxygen vacancy sites were observed for the g-C3N4 based heterojunction. The simulated results attested that g-C3N4 and BiVO4 formed a van der Waals type heterojunction, where an internal electric field facilitated the separation of electron/hole pair at g-C3N4/BiVO4 interface which further restrained the carrier recombination. Both the valence and conduction band edge positions of g-C3N4 and BiVO4 changed with the Fermi energy level. The resulted heterojunction had small effective masses of electrons (0.01 me) and holes (0.10 me) with ideal band edge positions where both CBM and VBM were well above and below the redox potential of water.

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