Enhanced optical and electrical characteristics of Si detectors integrated with periodic 1-D and 2-D semiconductor nanoscale structures

A. K. Sharma, Saleem H. Zaidi, G. Liecthy, S. R J Brueck

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Nanostructuring the active region of metal-siliconmetal (MSM) photodetectors (PDs) with subwavelength periodic 1-D and 2-D nanoscale grating structures significantly modifies the optical absorption, reflectance and transmission properties of silicon. These modifications dramatically impact the electrical characteristics of the MSM PDs. The surface reflection is reduced from ∼33% (planar Si) to ∼4% (nanostructured Si) for triangular shaped nanostructures. The internal quantum efficiency of the MSM PDs increased from ∼63% (planar) to ∼80% (nanostructured) at λ=700nm. Also a faster time constant (∼1700ps for planar MSM PD to ∼600ps for nanostructured MSM PD was achieved by enhancing the optical absorption near the surface where the carriers are efficiently and rapidly collected.

Original languageEnglish
Title of host publicationProceedings of the IEEE Conference on Nanotechnology
PublisherIEEE Computer Society
Pages368-373
Number of pages6
Volume2001-January
ISBN (Print)0780372158
DOIs
Publication statusPublished - 2001
Externally publishedYes
Event1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 - Maui, United States
Duration: 28 Oct 200130 Oct 2001

Other

Other1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
CountryUnited States
CityMaui
Period28/10/0130/10/01

Fingerprint

Photodetectors
photometers
Metals
Semiconductor materials
Detectors
detectors
metals
Light absorption
optical absorption
Silicon
Quantum efficiency
time constant
quantum efficiency
Nanostructures
gratings
reflectance
silicon

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Sharma, A. K., Zaidi, S. H., Liecthy, G., & Brueck, S. R. J. (2001). Enhanced optical and electrical characteristics of Si detectors integrated with periodic 1-D and 2-D semiconductor nanoscale structures. In Proceedings of the IEEE Conference on Nanotechnology (Vol. 2001-January, pp. 368-373). [966450] IEEE Computer Society. https://doi.org/10.1109/NANO.2001.966450

Enhanced optical and electrical characteristics of Si detectors integrated with periodic 1-D and 2-D semiconductor nanoscale structures. / Sharma, A. K.; Zaidi, Saleem H.; Liecthy, G.; Brueck, S. R J.

Proceedings of the IEEE Conference on Nanotechnology. Vol. 2001-January IEEE Computer Society, 2001. p. 368-373 966450.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sharma, AK, Zaidi, SH, Liecthy, G & Brueck, SRJ 2001, Enhanced optical and electrical characteristics of Si detectors integrated with periodic 1-D and 2-D semiconductor nanoscale structures. in Proceedings of the IEEE Conference on Nanotechnology. vol. 2001-January, 966450, IEEE Computer Society, pp. 368-373, 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001, Maui, United States, 28/10/01. https://doi.org/10.1109/NANO.2001.966450
Sharma AK, Zaidi SH, Liecthy G, Brueck SRJ. Enhanced optical and electrical characteristics of Si detectors integrated with periodic 1-D and 2-D semiconductor nanoscale structures. In Proceedings of the IEEE Conference on Nanotechnology. Vol. 2001-January. IEEE Computer Society. 2001. p. 368-373. 966450 https://doi.org/10.1109/NANO.2001.966450
Sharma, A. K. ; Zaidi, Saleem H. ; Liecthy, G. ; Brueck, S. R J. / Enhanced optical and electrical characteristics of Si detectors integrated with periodic 1-D and 2-D semiconductor nanoscale structures. Proceedings of the IEEE Conference on Nanotechnology. Vol. 2001-January IEEE Computer Society, 2001. pp. 368-373
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