ENERGY BAND MODELS OF n-Zn//xCd//1// minus //xS - p-CdTe AND n-Zn//xCd//1// minus //xS - p-Si (0 less than equivalent to x less than equivalent to 1) HETEROJUNCTIONS.

T. M. Razykov, B. Kh Kadyrov, M. A. Khodyaeva

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Zn//xCd//1// minus //xS solid solutions are applied in thin film solar cells. Owing to the change of band gap in a wide range from 2. 4 ev at x equals 0 to 3. 6 ev at x equals 1 this system is usually the wideband component of a heterojunction. In this note the energy band models (EBM) of n-Zn//xCd//1// minus //xS - p-CdTe and n-Zn//xCd//1// minus //xS - p-Si heterojunctions are considered in the whole range of compositions 0 less than equivalent to x less than equivalent to 1 of Zn//xCd//1// minus //xS films for clearing up the physical processes being realized in these structures and to find the optimal Zn//xCd//1// minus //xS composition for preparing solar cells. Zn//xCd//1// minus //xS films with free electron concentration (6. 2 to 2. 0) multiplied by 10**1**7 cm** minus **3 and thickness approximately equals 1 mu m in the range 0 less than equivalent to x less than equivalent to 1 have been prepared by chemical vapor deposition in hydrogen flow on etched p-CdTe and p-Si single crystals with free hole concentrations 7 multiplied by 10**1**6 cm** minus **3 and 2. 5 multiplied by 10**1**7 cm** minus **3, respectively. Evaporated In to n-Zn//xCd//1// minus //xS, Au to p-CdTe, and Al to p-Si were used as ohmic low-resistance contacts.

Original languageEnglish
JournalPhysica Status Solidi (A) Applied Research
Volume91
Issue number1
Publication statusPublished - Sep 1985
Externally publishedYes

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Heterojunctions
heterojunctions
solar cells
Hole concentration
clearing
low resistance
Contact resistance
Chemical analysis
Band structure
free electrons
energy bands
Hydrogen
Chemical vapor deposition
Solid solutions
Solar cells
Energy gap
solid solutions
Single crystals
vapor deposition
broadband

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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title = "ENERGY BAND MODELS OF n-Zn//xCd//1// minus //xS - p-CdTe AND n-Zn//xCd//1// minus //xS - p-Si (0 less than equivalent to x less than equivalent to 1) HETEROJUNCTIONS.",
abstract = "Zn//xCd//1// minus //xS solid solutions are applied in thin film solar cells. Owing to the change of band gap in a wide range from 2. 4 ev at x equals 0 to 3. 6 ev at x equals 1 this system is usually the wideband component of a heterojunction. In this note the energy band models (EBM) of n-Zn//xCd//1// minus //xS - p-CdTe and n-Zn//xCd//1// minus //xS - p-Si heterojunctions are considered in the whole range of compositions 0 less than equivalent to x less than equivalent to 1 of Zn//xCd//1// minus //xS films for clearing up the physical processes being realized in these structures and to find the optimal Zn//xCd//1// minus //xS composition for preparing solar cells. Zn//xCd//1// minus //xS films with free electron concentration (6. 2 to 2. 0) multiplied by 10**1**7 cm** minus **3 and thickness approximately equals 1 mu m in the range 0 less than equivalent to x less than equivalent to 1 have been prepared by chemical vapor deposition in hydrogen flow on etched p-CdTe and p-Si single crystals with free hole concentrations 7 multiplied by 10**1**6 cm** minus **3 and 2. 5 multiplied by 10**1**7 cm** minus **3, respectively. Evaporated In to n-Zn//xCd//1// minus //xS, Au to p-CdTe, and Al to p-Si were used as ohmic low-resistance contacts.",
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