### Abstract

Zn//xCd//1// minus //xS solid solutions are applied in thin film solar cells. Owing to the change of band gap in a wide range from 2. 4 ev at x equals 0 to 3. 6 ev at x equals 1 this system is usually the wideband component of a heterojunction. In this note the energy band models (EBM) of n-Zn//xCd//1// minus //xS - p-CdTe and n-Zn//xCd//1// minus //xS - p-Si heterojunctions are considered in the whole range of compositions 0 less than equivalent to x less than equivalent to 1 of Zn//xCd//1// minus //xS films for clearing up the physical processes being realized in these structures and to find the optimal Zn//xCd//1// minus //xS composition for preparing solar cells. Zn//xCd//1// minus //xS films with free electron concentration (6. 2 to 2. 0) multiplied by 10**1**7 cm** minus **3 and thickness approximately equals 1 mu m in the range 0 less than equivalent to x less than equivalent to 1 have been prepared by chemical vapor deposition in hydrogen flow on etched p-CdTe and p-Si single crystals with free hole concentrations 7 multiplied by 10**1**6 cm** minus **3 and 2. 5 multiplied by 10**1**7 cm** minus **3, respectively. Evaporated In to n-Zn//xCd//1// minus //xS, Au to p-CdTe, and Al to p-Si were used as ohmic low-resistance contacts.

Original language | English |
---|---|

Journal | Physica Status Solidi (A) Applied Research |

Volume | 91 |

Issue number | 1 |

Publication status | Published - Sep 1985 |

Externally published | Yes |

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### ASJC Scopus subject areas

- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics

### Cite this

*Physica Status Solidi (A) Applied Research*,

*91*(1).

**ENERGY BAND MODELS OF n-Zn//xCd//1// minus //xS - p-CdTe AND n-Zn//xCd//1// minus //xS - p-Si (0 less than equivalent to x less than equivalent to 1) HETEROJUNCTIONS.** / Razykov, T. M.; Kadyrov, B. Kh; Khodyaeva, M. A.

Research output: Contribution to journal › Article

*Physica Status Solidi (A) Applied Research*, vol. 91, no. 1.

}

TY - JOUR

T1 - ENERGY BAND MODELS OF n-Zn//xCd//1// minus //xS - p-CdTe AND n-Zn//xCd//1// minus //xS - p-Si (0 less than equivalent to x less than equivalent to 1) HETEROJUNCTIONS.

AU - Razykov, T. M.

AU - Kadyrov, B. Kh

AU - Khodyaeva, M. A.

PY - 1985/9

Y1 - 1985/9

N2 - Zn//xCd//1// minus //xS solid solutions are applied in thin film solar cells. Owing to the change of band gap in a wide range from 2. 4 ev at x equals 0 to 3. 6 ev at x equals 1 this system is usually the wideband component of a heterojunction. In this note the energy band models (EBM) of n-Zn//xCd//1// minus //xS - p-CdTe and n-Zn//xCd//1// minus //xS - p-Si heterojunctions are considered in the whole range of compositions 0 less than equivalent to x less than equivalent to 1 of Zn//xCd//1// minus //xS films for clearing up the physical processes being realized in these structures and to find the optimal Zn//xCd//1// minus //xS composition for preparing solar cells. Zn//xCd//1// minus //xS films with free electron concentration (6. 2 to 2. 0) multiplied by 10**1**7 cm** minus **3 and thickness approximately equals 1 mu m in the range 0 less than equivalent to x less than equivalent to 1 have been prepared by chemical vapor deposition in hydrogen flow on etched p-CdTe and p-Si single crystals with free hole concentrations 7 multiplied by 10**1**6 cm** minus **3 and 2. 5 multiplied by 10**1**7 cm** minus **3, respectively. Evaporated In to n-Zn//xCd//1// minus //xS, Au to p-CdTe, and Al to p-Si were used as ohmic low-resistance contacts.

AB - Zn//xCd//1// minus //xS solid solutions are applied in thin film solar cells. Owing to the change of band gap in a wide range from 2. 4 ev at x equals 0 to 3. 6 ev at x equals 1 this system is usually the wideband component of a heterojunction. In this note the energy band models (EBM) of n-Zn//xCd//1// minus //xS - p-CdTe and n-Zn//xCd//1// minus //xS - p-Si heterojunctions are considered in the whole range of compositions 0 less than equivalent to x less than equivalent to 1 of Zn//xCd//1// minus //xS films for clearing up the physical processes being realized in these structures and to find the optimal Zn//xCd//1// minus //xS composition for preparing solar cells. Zn//xCd//1// minus //xS films with free electron concentration (6. 2 to 2. 0) multiplied by 10**1**7 cm** minus **3 and thickness approximately equals 1 mu m in the range 0 less than equivalent to x less than equivalent to 1 have been prepared by chemical vapor deposition in hydrogen flow on etched p-CdTe and p-Si single crystals with free hole concentrations 7 multiplied by 10**1**6 cm** minus **3 and 2. 5 multiplied by 10**1**7 cm** minus **3, respectively. Evaporated In to n-Zn//xCd//1// minus //xS, Au to p-CdTe, and Al to p-Si were used as ohmic low-resistance contacts.

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M3 - Article

AN - SCOPUS:0022130351

VL - 91

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

ER -