Electronic state transition in cooperatively interacting point-defects in semiconductor crystals

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electron state transition of deep level point defects in a semiconductor crystal was studied. Low-temperature grown GaAs produced excess antisite As (AsGa) which produces localized spin when doped with Be. A nearly abrupt decrease of 1.7% of the resistance is detected at a temperature around 4 K which is consistent with abrupt decrease of magnetization. These observations are explained as a result of cooperative transition of electron states of AsGa defects. First-principal calculations of the electron state of an AsGa atom with a shallow acceptor Be show that at the transition an AsGa + ion is displaced to the interstitial site and becomes a neutral atom and finally results in formation of a hole producing enhancement in conductivity.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages252-254
Number of pages3
ISBN (Print)9781479957606
DOIs
Publication statusPublished - 10 Oct 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur
Duration: 27 Aug 201429 Aug 2014

Other

Other11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CityKuala Lumpur
Period27/8/1429/8/14

Fingerprint

Electronic states
Point defects
Electron energy levels
Semiconductor materials
Electron transitions
Crystals
Atoms
Magnetization
Ions
Temperature
Defects

Keywords

  • antisite As
  • LT-GaAs
  • Molecular Beam Epitaxy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Mohamed, M. A., Yeop Majlis, B., & Ani, M. H. (2014). Electronic state transition in cooperatively interacting point-defects in semiconductor crystals. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 252-254). [6920844] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920844

Electronic state transition in cooperatively interacting point-defects in semiconductor crystals. / Mohamed, Mohd Ambri; Yeop Majlis, Burhanuddin; Ani, M. H.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. p. 252-254 6920844.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mohamed, MA, Yeop Majlis, B & Ani, MH 2014, Electronic state transition in cooperatively interacting point-defects in semiconductor crystals. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 6920844, Institute of Electrical and Electronics Engineers Inc., pp. 252-254, 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, Kuala Lumpur, 27/8/14. https://doi.org/10.1109/SMELEC.2014.6920844
Mohamed MA, Yeop Majlis B, Ani MH. Electronic state transition in cooperatively interacting point-defects in semiconductor crystals. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc. 2014. p. 252-254. 6920844 https://doi.org/10.1109/SMELEC.2014.6920844
Mohamed, Mohd Ambri ; Yeop Majlis, Burhanuddin ; Ani, M. H. / Electronic state transition in cooperatively interacting point-defects in semiconductor crystals. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 252-254
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