Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer

Poh Choon Ooi, Muhammad Aniq Shazni Mohammad Haniff, Mohd Farhanulhakim Mohd Razip Wee, Boon Tong Goh, Chang Fu Dee, Mohd Ambri Mohamed, Burhanuddin Yeop Majlis

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2 Citations (Scopus)

Abstract

In the interest of the trend towards miniaturization of electronic gadgets, this study demonstrates a high-density data storage device with a very simple three-stacking layer consisting of only one charge trapping layer. A simple solution-processed technique has been used to fabricate the tristable non-volatile memory. The three-stacking layer was constructed in between two metals to form a two-terminal metal-insulator-metal structure. The fabricated device showed a large multilevel memory hysteresis window with a measured ON/OFF current ratio of 10 7 that might be attributed to the high charge trapped in molybdenum disulphide (MoS 2 ) flakes-graphene quantum dots (GQDs) heterostructure. Transmission electron microscopy was performed to examine the orientation of MoS 2 -GQD and mixture dispersion preparation method. The obtained electrical data was used further to speculate the possible transport mechanisms through the fabricated device by a curve fitting technique. Also, endurance cycle and retention tests were performed at room temperature to investigate the stability of the device.

Original languageEnglish
Article number6761
JournalScientific Reports
Volume9
Issue number1
DOIs
Publication statusPublished - 1 Dec 2019

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Quantum Dots
Graphite
Polymers
Equipment and Supplies
Metals
Miniaturization
Information Storage and Retrieval
Transmission Electron Microscopy
Temperature
molybdenum disulfide
polyvinylidene fluoride

ASJC Scopus subject areas

  • General

Cite this

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title = "Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer",
abstract = "In the interest of the trend towards miniaturization of electronic gadgets, this study demonstrates a high-density data storage device with a very simple three-stacking layer consisting of only one charge trapping layer. A simple solution-processed technique has been used to fabricate the tristable non-volatile memory. The three-stacking layer was constructed in between two metals to form a two-terminal metal-insulator-metal structure. The fabricated device showed a large multilevel memory hysteresis window with a measured ON/OFF current ratio of 10 7 that might be attributed to the high charge trapped in molybdenum disulphide (MoS 2 ) flakes-graphene quantum dots (GQDs) heterostructure. Transmission electron microscopy was performed to examine the orientation of MoS 2 -GQD and mixture dispersion preparation method. The obtained electrical data was used further to speculate the possible transport mechanisms through the fabricated device by a curve fitting technique. Also, endurance cycle and retention tests were performed at room temperature to investigate the stability of the device.",
author = "Ooi, {Poh Choon} and {Mohammad Haniff}, {Muhammad Aniq Shazni} and {Mohd Razip Wee}, {Mohd Farhanulhakim} and Goh, {Boon Tong} and Dee, {Chang Fu} and Mohamed, {Mohd Ambri} and {Yeop Majlis}, Burhanuddin",
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AU - Ooi, Poh Choon

AU - Mohammad Haniff, Muhammad Aniq Shazni

AU - Mohd Razip Wee, Mohd Farhanulhakim

AU - Goh, Boon Tong

AU - Dee, Chang Fu

AU - Mohamed, Mohd Ambri

AU - Yeop Majlis, Burhanuddin

PY - 2019/12/1

Y1 - 2019/12/1

N2 - In the interest of the trend towards miniaturization of electronic gadgets, this study demonstrates a high-density data storage device with a very simple three-stacking layer consisting of only one charge trapping layer. A simple solution-processed technique has been used to fabricate the tristable non-volatile memory. The three-stacking layer was constructed in between two metals to form a two-terminal metal-insulator-metal structure. The fabricated device showed a large multilevel memory hysteresis window with a measured ON/OFF current ratio of 10 7 that might be attributed to the high charge trapped in molybdenum disulphide (MoS 2 ) flakes-graphene quantum dots (GQDs) heterostructure. Transmission electron microscopy was performed to examine the orientation of MoS 2 -GQD and mixture dispersion preparation method. The obtained electrical data was used further to speculate the possible transport mechanisms through the fabricated device by a curve fitting technique. Also, endurance cycle and retention tests were performed at room temperature to investigate the stability of the device.

AB - In the interest of the trend towards miniaturization of electronic gadgets, this study demonstrates a high-density data storage device with a very simple three-stacking layer consisting of only one charge trapping layer. A simple solution-processed technique has been used to fabricate the tristable non-volatile memory. The three-stacking layer was constructed in between two metals to form a two-terminal metal-insulator-metal structure. The fabricated device showed a large multilevel memory hysteresis window with a measured ON/OFF current ratio of 10 7 that might be attributed to the high charge trapped in molybdenum disulphide (MoS 2 ) flakes-graphene quantum dots (GQDs) heterostructure. Transmission electron microscopy was performed to examine the orientation of MoS 2 -GQD and mixture dispersion preparation method. The obtained electrical data was used further to speculate the possible transport mechanisms through the fabricated device by a curve fitting technique. Also, endurance cycle and retention tests were performed at room temperature to investigate the stability of the device.

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