Electrical characterization of cross-linked ZnO nanostructures grown on Si and Si/SiO2 substrate

Chang Fu Dee, Burhanuddin Yeop Majlis, Muhammad Yahaya, Muhamad Mat Salleh

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

ZnO nanostructures were synthesized on Si and Si/SiO2 substrate by well established thermal-evaporation-deposition method which involves vapor-solid growth process for non-catalysts activated growth. Scanning electron micrograph shows difference type of ZnO nanostructures have been synthesized. Electrical I-V characterization was measured by using Al as electrode at room temperature. Schottky contacts were obtained for both contact of ZnO nanowires and Al. A symmetric metal-semiconductor-metal junction was obtained. A two-opposite-diode equivalent circuit was applied to explain this I-V characteristic.

Original languageEnglish
Pages (from-to)281-283
Number of pages3
JournalSains Malaysiana
Volume37
Issue number3
Publication statusPublished - Sep 2008

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equivalent circuits
metals
electric contacts
nanowires
diodes
evaporation
vapors
scanning
electrodes
room temperature
electrons

Keywords

  • I-V measurement
  • Schottky contacts
  • ZnO nanostructures

ASJC Scopus subject areas

  • General

Cite this

Electrical characterization of cross-linked ZnO nanostructures grown on Si and Si/SiO2 substrate. / Dee, Chang Fu; Yeop Majlis, Burhanuddin; Yahaya, Muhammad; Mat Salleh, Muhamad.

In: Sains Malaysiana, Vol. 37, No. 3, 09.2008, p. 281-283.

Research output: Contribution to journalArticle

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