Electrical characteristics of silicon-on-insulator (SOI) phase modulator

Hanim Abdul Razak, Hazura Haroon, Mardiana Bidin, Wan Maisarah Mukhtar, Zulatfyi Fauzan Mohammed Napiah, P. Susthitha Menon N V Visvanathan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper highlights the study of carrier injection effect on silicon-on-insulator waveguide with trapezoidal cross section structure. The n-p-n structure will be employed to study the device performance in terms of modulation efficiency and absorption loss. The characterization of the proposed device will be carried out by 2D Silvaco CAD software under different applied voltages. The device is designed to be operated at 1.55m optical wavelength with single mode behavior. The injection of free carriers into the guiding region changes the refractive index and the modelling has been carried out by Atlas from Silvaco to determine the electrical characteristics. From the simulation, the change of the refractive index, δn from which we can estimate the phase shift, and the device length that is required for phase shift, Lπ are reported. It is predicted that the performance of trapezoidal cross section waveguide is better than conventional rib waveguide.

Original languageEnglish
Title of host publication2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
Pages377-379
Number of pages3
DOIs
Publication statusPublished - 2011
Event2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 - Kota Kinabalu, Sabah
Duration: 28 Sep 201130 Sep 2011

Other

Other2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011
CityKota Kinabalu, Sabah
Period28/9/1130/9/11

Fingerprint

Modulators
Waveguides
Phase shift
Silicon
Refractive index
Computer aided design
Modulation
Wavelength
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Razak, H. A., Haroon, H., Bidin, M., Mukhtar, W. M., Napiah, Z. F. M., & N V Visvanathan, P. S. M. (2011). Electrical characteristics of silicon-on-insulator (SOI) phase modulator. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts (pp. 377-379). [6088364] https://doi.org/10.1109/RSM.2011.6088364

Electrical characteristics of silicon-on-insulator (SOI) phase modulator. / Razak, Hanim Abdul; Haroon, Hazura; Bidin, Mardiana; Mukhtar, Wan Maisarah; Napiah, Zulatfyi Fauzan Mohammed; N V Visvanathan, P. Susthitha Menon.

2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 377-379 6088364.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Razak, HA, Haroon, H, Bidin, M, Mukhtar, WM, Napiah, ZFM & N V Visvanathan, PSM 2011, Electrical characteristics of silicon-on-insulator (SOI) phase modulator. in 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts., 6088364, pp. 377-379, 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011, Kota Kinabalu, Sabah, 28/9/11. https://doi.org/10.1109/RSM.2011.6088364
Razak HA, Haroon H, Bidin M, Mukhtar WM, Napiah ZFM, N V Visvanathan PSM. Electrical characteristics of silicon-on-insulator (SOI) phase modulator. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 377-379. 6088364 https://doi.org/10.1109/RSM.2011.6088364
Razak, Hanim Abdul ; Haroon, Hazura ; Bidin, Mardiana ; Mukhtar, Wan Maisarah ; Napiah, Zulatfyi Fauzan Mohammed ; N V Visvanathan, P. Susthitha Menon. / Electrical characteristics of silicon-on-insulator (SOI) phase modulator. 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. pp. 377-379
@inproceedings{0e49d6a1009c462b97f670fc4faaa470,
title = "Electrical characteristics of silicon-on-insulator (SOI) phase modulator",
abstract = "This paper highlights the study of carrier injection effect on silicon-on-insulator waveguide with trapezoidal cross section structure. The n-p-n structure will be employed to study the device performance in terms of modulation efficiency and absorption loss. The characterization of the proposed device will be carried out by 2D Silvaco CAD software under different applied voltages. The device is designed to be operated at 1.55m optical wavelength with single mode behavior. The injection of free carriers into the guiding region changes the refractive index and the modelling has been carried out by Atlas from Silvaco to determine the electrical characteristics. From the simulation, the change of the refractive index, δn from which we can estimate the phase shift, and the device length that is required for phase shift, Lπ are reported. It is predicted that the performance of trapezoidal cross section waveguide is better than conventional rib waveguide.",
author = "Razak, {Hanim Abdul} and Hazura Haroon and Mardiana Bidin and Mukhtar, {Wan Maisarah} and Napiah, {Zulatfyi Fauzan Mohammed} and {N V Visvanathan}, {P. Susthitha Menon}",
year = "2011",
doi = "10.1109/RSM.2011.6088364",
language = "English",
isbn = "9781612848464",
pages = "377--379",
booktitle = "2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts",

}

TY - GEN

T1 - Electrical characteristics of silicon-on-insulator (SOI) phase modulator

AU - Razak, Hanim Abdul

AU - Haroon, Hazura

AU - Bidin, Mardiana

AU - Mukhtar, Wan Maisarah

AU - Napiah, Zulatfyi Fauzan Mohammed

AU - N V Visvanathan, P. Susthitha Menon

PY - 2011

Y1 - 2011

N2 - This paper highlights the study of carrier injection effect on silicon-on-insulator waveguide with trapezoidal cross section structure. The n-p-n structure will be employed to study the device performance in terms of modulation efficiency and absorption loss. The characterization of the proposed device will be carried out by 2D Silvaco CAD software under different applied voltages. The device is designed to be operated at 1.55m optical wavelength with single mode behavior. The injection of free carriers into the guiding region changes the refractive index and the modelling has been carried out by Atlas from Silvaco to determine the electrical characteristics. From the simulation, the change of the refractive index, δn from which we can estimate the phase shift, and the device length that is required for phase shift, Lπ are reported. It is predicted that the performance of trapezoidal cross section waveguide is better than conventional rib waveguide.

AB - This paper highlights the study of carrier injection effect on silicon-on-insulator waveguide with trapezoidal cross section structure. The n-p-n structure will be employed to study the device performance in terms of modulation efficiency and absorption loss. The characterization of the proposed device will be carried out by 2D Silvaco CAD software under different applied voltages. The device is designed to be operated at 1.55m optical wavelength with single mode behavior. The injection of free carriers into the guiding region changes the refractive index and the modelling has been carried out by Atlas from Silvaco to determine the electrical characteristics. From the simulation, the change of the refractive index, δn from which we can estimate the phase shift, and the device length that is required for phase shift, Lπ are reported. It is predicted that the performance of trapezoidal cross section waveguide is better than conventional rib waveguide.

UR - http://www.scopus.com/inward/record.url?scp=83755173776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=83755173776&partnerID=8YFLogxK

U2 - 10.1109/RSM.2011.6088364

DO - 10.1109/RSM.2011.6088364

M3 - Conference contribution

SN - 9781612848464

SP - 377

EP - 379

BT - 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts

ER -