Electrical characteristics of Al0.22Ga0.78As/In 0.22Ga0.78as PHEMT with gate length in nano regime

K. N M Kharuddin, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the gate length (Lg) dependence of the electrical characteristics in AlGaAs/InGaAs PHEMT using Silvaco simulation tools. Two PHEMTs with different structure are studied, namely uniformly doped PHEMT (U-HEMT) and PHEMT with double delta-doped (D-HEMT) layers. For both PHEMT, short channel effects affect characteristics significantly especially in devices with gate lengths of sub-100 nm regime. From simulation, a maximum fT of 165 GHz is obtained for 70 nm gate-length UHEMT while the 70 nm gate-length DPHEMT displays fT of 135 GHz.

Original languageEnglish
Title of host publicationProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics
Pages359-363
Number of pages5
Publication statusPublished - 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur
Duration: 4 Dec 20049 Dec 2004

Other

Other2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
CityKuala Lumpur
Period4/12/049/12/04

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High electron mobility transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kharuddin, K. N. M., & Yeop Majlis, B. (2004). Electrical characteristics of Al0.22Ga0.78As/In 0.22Ga0.78as PHEMT with gate length in nano regime. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics (pp. 359-363). [1620905]

Electrical characteristics of Al0.22Ga0.78As/In 0.22Ga0.78as PHEMT with gate length in nano regime. / Kharuddin, K. N M; Yeop Majlis, Burhanuddin.

Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 359-363 1620905.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kharuddin, KNM & Yeop Majlis, B 2004, Electrical characteristics of Al0.22Ga0.78As/In 0.22Ga0.78as PHEMT with gate length in nano regime. in Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics., 1620905, pp. 359-363, 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004, Kuala Lumpur, 4/12/04.
Kharuddin KNM, Yeop Majlis B. Electrical characteristics of Al0.22Ga0.78As/In 0.22Ga0.78as PHEMT with gate length in nano regime. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 359-363. 1620905
Kharuddin, K. N M ; Yeop Majlis, Burhanuddin. / Electrical characteristics of Al0.22Ga0.78As/In 0.22Ga0.78as PHEMT with gate length in nano regime. Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. pp. 359-363
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