Electrical characteristics and stability of pentacene field-effect transistors in air using HfO2 as a gate insulator

Md. Akhtaruzzaman, Shun Ichiro Ohmi, Hiroshi Ishiwara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A top-contact type pentacene-based thin film transistor was fabricated using HfO2 as a gate insulator. The HfO2 of 12 nm thick was deposited on SiO2/n+-Si substrate by ECR (electron cyclotron resonance) sputtering at Ar/O2 (20:4 sccm) ambient. All of the electrical measurements were performed in ex-situ process. The device thus fabricated showed excellent electrical performance with high hole mobility of 0.5 cm2V-1s-1 and on/off ratio of 10 4. The devices were found to be remarkably stable for as long as 20 days in air.

Original languageEnglish
Title of host publicationPhysics and Technology of Organic Semiconductor Devices
Pages59-67
Number of pages9
Volume1115
Publication statusPublished - 2010
Externally publishedYes
Event2008 MRS Fall Meeting - Boston, MA, United States
Duration: 2 Dec 20085 Dec 2008

Other

Other2008 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period2/12/085/12/08

Fingerprint

Hole mobility
Electron cyclotron resonance
Thin film transistors
Field effect transistors
Sputtering
field effect transistors
insulators
air
hole mobility
Substrates
electron cyclotron resonance
Air
electrical measurement
transistors
sputtering
thin films
pentacene

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Akhtaruzzaman, M., Ohmi, S. I., & Ishiwara, H. (2010). Electrical characteristics and stability of pentacene field-effect transistors in air using HfO2 as a gate insulator. In Physics and Technology of Organic Semiconductor Devices (Vol. 1115, pp. 59-67)

Electrical characteristics and stability of pentacene field-effect transistors in air using HfO2 as a gate insulator. / Akhtaruzzaman, Md.; Ohmi, Shun Ichiro; Ishiwara, Hiroshi.

Physics and Technology of Organic Semiconductor Devices. Vol. 1115 2010. p. 59-67.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akhtaruzzaman, M, Ohmi, SI & Ishiwara, H 2010, Electrical characteristics and stability of pentacene field-effect transistors in air using HfO2 as a gate insulator. in Physics and Technology of Organic Semiconductor Devices. vol. 1115, pp. 59-67, 2008 MRS Fall Meeting, Boston, MA, United States, 2/12/08.
Akhtaruzzaman M, Ohmi SI, Ishiwara H. Electrical characteristics and stability of pentacene field-effect transistors in air using HfO2 as a gate insulator. In Physics and Technology of Organic Semiconductor Devices. Vol. 1115. 2010. p. 59-67
Akhtaruzzaman, Md. ; Ohmi, Shun Ichiro ; Ishiwara, Hiroshi. / Electrical characteristics and stability of pentacene field-effect transistors in air using HfO2 as a gate insulator. Physics and Technology of Organic Semiconductor Devices. Vol. 1115 2010. pp. 59-67
@inproceedings{76495f78351243aa95785fd6a8445625,
title = "Electrical characteristics and stability of pentacene field-effect transistors in air using HfO2 as a gate insulator",
abstract = "A top-contact type pentacene-based thin film transistor was fabricated using HfO2 as a gate insulator. The HfO2 of 12 nm thick was deposited on SiO2/n+-Si substrate by ECR (electron cyclotron resonance) sputtering at Ar/O2 (20:4 sccm) ambient. All of the electrical measurements were performed in ex-situ process. The device thus fabricated showed excellent electrical performance with high hole mobility of 0.5 cm2V-1s-1 and on/off ratio of 10 4. The devices were found to be remarkably stable for as long as 20 days in air.",
author = "Md. Akhtaruzzaman and Ohmi, {Shun Ichiro} and Hiroshi Ishiwara",
year = "2010",
language = "English",
isbn = "9781605110875",
volume = "1115",
pages = "59--67",
booktitle = "Physics and Technology of Organic Semiconductor Devices",

}

TY - GEN

T1 - Electrical characteristics and stability of pentacene field-effect transistors in air using HfO2 as a gate insulator

AU - Akhtaruzzaman, Md.

AU - Ohmi, Shun Ichiro

AU - Ishiwara, Hiroshi

PY - 2010

Y1 - 2010

N2 - A top-contact type pentacene-based thin film transistor was fabricated using HfO2 as a gate insulator. The HfO2 of 12 nm thick was deposited on SiO2/n+-Si substrate by ECR (electron cyclotron resonance) sputtering at Ar/O2 (20:4 sccm) ambient. All of the electrical measurements were performed in ex-situ process. The device thus fabricated showed excellent electrical performance with high hole mobility of 0.5 cm2V-1s-1 and on/off ratio of 10 4. The devices were found to be remarkably stable for as long as 20 days in air.

AB - A top-contact type pentacene-based thin film transistor was fabricated using HfO2 as a gate insulator. The HfO2 of 12 nm thick was deposited on SiO2/n+-Si substrate by ECR (electron cyclotron resonance) sputtering at Ar/O2 (20:4 sccm) ambient. All of the electrical measurements were performed in ex-situ process. The device thus fabricated showed excellent electrical performance with high hole mobility of 0.5 cm2V-1s-1 and on/off ratio of 10 4. The devices were found to be remarkably stable for as long as 20 days in air.

UR - http://www.scopus.com/inward/record.url?scp=77952384184&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952384184&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781605110875

VL - 1115

SP - 59

EP - 67

BT - Physics and Technology of Organic Semiconductor Devices

ER -