Electrical bistabilities behaviour of all-solution-processed non-volatile memories based on graphene quantum dots embedded in graphene oxide layers

Muhammad Musoddiq Jaafar, Poh Choon Ooi, Mohd Farhanulhakim Mohd Razip Wee, Muhammad Aniq Shazni Mohammad Haniff, Mohd Ambri Mohamed, Edward Yi Chang, Burhanuddin Yeop Majlis, Chang Fu Dee

Research output: Contribution to journalArticle

Abstract

This study demonstrates the feasibility of all-solution-processed mean to fabricate carbon-based non-volatile memory (NVM). The NVM devices were fabricated on polyethylene terephthalate (PET) substrate using spin-coating and spray-coating techniques in the structure of silver nanowires (AgNWs)/graphene oxide (GO)/graphene quantum dots (GQDs)/graphene oxide (GO)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/PET. PEDOT:PSS was used as the bottom conductive layer and deposited by spin-coating method. GQDs were used as a charge trapping site in the structure and embedded in the two GO insulator layers. The AgNW metal electrode was formed on top of GO/GQDs/GO/PEDOT:PSS by the spray-coating method. The overall smooth surface morphology of the spray-coated films serves as good contact with the top metal electrode. The electrical characterization of the fabricated device shows the bistable current states with the ON/OFF ratio of 105. The NVM device can be programmed and erased multiple times. Various conduction mechanisms were proposed to describe the charge trapping process in GQD based on the obtained current–voltage measurement.

Original languageEnglish
JournalJournal of Materials Science: Materials in Electronics
DOIs
Publication statusAccepted/In press - 1 Jan 2019

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Graphite
Oxides
Graphene
Semiconductor quantum dots
graphene
quantum dots
Data storage equipment
oxides
coating
sulfonates
sprayers
Polystyrenes
polystyrene
Charge trapping
Polyethylene Terephthalates
polyethylene terephthalate
Spin coating
Polyethylene terephthalates
Metals
trapping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Electrical bistabilities behaviour of all-solution-processed non-volatile memories based on graphene quantum dots embedded in graphene oxide layers",
abstract = "This study demonstrates the feasibility of all-solution-processed mean to fabricate carbon-based non-volatile memory (NVM). The NVM devices were fabricated on polyethylene terephthalate (PET) substrate using spin-coating and spray-coating techniques in the structure of silver nanowires (AgNWs)/graphene oxide (GO)/graphene quantum dots (GQDs)/graphene oxide (GO)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/PET. PEDOT:PSS was used as the bottom conductive layer and deposited by spin-coating method. GQDs were used as a charge trapping site in the structure and embedded in the two GO insulator layers. The AgNW metal electrode was formed on top of GO/GQDs/GO/PEDOT:PSS by the spray-coating method. The overall smooth surface morphology of the spray-coated films serves as good contact with the top metal electrode. The electrical characterization of the fabricated device shows the bistable current states with the ON/OFF ratio of 105. The NVM device can be programmed and erased multiple times. Various conduction mechanisms were proposed to describe the charge trapping process in GQD based on the obtained current–voltage measurement.",
author = "Jaafar, {Muhammad Musoddiq} and Ooi, {Poh Choon} and {Mohd Razip Wee}, {Mohd Farhanulhakim} and {Mohammad Haniff}, {Muhammad Aniq Shazni} and Mohamed, {Mohd Ambri} and Chang, {Edward Yi} and {Yeop Majlis}, Burhanuddin and Dee, {Chang Fu}",
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AU - Jaafar, Muhammad Musoddiq

AU - Ooi, Poh Choon

AU - Mohd Razip Wee, Mohd Farhanulhakim

AU - Mohammad Haniff, Muhammad Aniq Shazni

AU - Mohamed, Mohd Ambri

AU - Chang, Edward Yi

AU - Yeop Majlis, Burhanuddin

AU - Dee, Chang Fu

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N2 - This study demonstrates the feasibility of all-solution-processed mean to fabricate carbon-based non-volatile memory (NVM). The NVM devices were fabricated on polyethylene terephthalate (PET) substrate using spin-coating and spray-coating techniques in the structure of silver nanowires (AgNWs)/graphene oxide (GO)/graphene quantum dots (GQDs)/graphene oxide (GO)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/PET. PEDOT:PSS was used as the bottom conductive layer and deposited by spin-coating method. GQDs were used as a charge trapping site in the structure and embedded in the two GO insulator layers. The AgNW metal electrode was formed on top of GO/GQDs/GO/PEDOT:PSS by the spray-coating method. The overall smooth surface morphology of the spray-coated films serves as good contact with the top metal electrode. The electrical characterization of the fabricated device shows the bistable current states with the ON/OFF ratio of 105. The NVM device can be programmed and erased multiple times. Various conduction mechanisms were proposed to describe the charge trapping process in GQD based on the obtained current–voltage measurement.

AB - This study demonstrates the feasibility of all-solution-processed mean to fabricate carbon-based non-volatile memory (NVM). The NVM devices were fabricated on polyethylene terephthalate (PET) substrate using spin-coating and spray-coating techniques in the structure of silver nanowires (AgNWs)/graphene oxide (GO)/graphene quantum dots (GQDs)/graphene oxide (GO)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/PET. PEDOT:PSS was used as the bottom conductive layer and deposited by spin-coating method. GQDs were used as a charge trapping site in the structure and embedded in the two GO insulator layers. The AgNW metal electrode was formed on top of GO/GQDs/GO/PEDOT:PSS by the spray-coating method. The overall smooth surface morphology of the spray-coated films serves as good contact with the top metal electrode. The electrical characterization of the fabricated device shows the bistable current states with the ON/OFF ratio of 105. The NVM device can be programmed and erased multiple times. Various conduction mechanisms were proposed to describe the charge trapping process in GQD based on the obtained current–voltage measurement.

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