Effects of sulfurization temperature on structural, morphological, and optoelectronic properties of CTS thin films solar cells

E. S. Hossain, P. Chelvanathan, S. A. Shahahmadi, M. T. Ferdaous, Badariah Bais, S. K. Tiong, Nowshad Amin

Research output: Contribution to journalArticle

Abstract

Cu2 SnS3 (CTS) thin films were fabricated by two-step process: deposition of precursor by RF magnetron sputtering, and subsequent sulfurization at different temperatures. The influence of sulfurization temperatures on the structural, morphological, optical, and electrical properties was investigated to find out the optimum growth route for CTS formation kinetics. All prepared samples were found Sn-rich by the EDX compositional analysis. Structural analysis confirmed the CTS formation with the impurity phase of Cu4 Sn7 S16 at lower temperature, and Sn2 S3 at higher sulfurization temperature. Crystallite size of these films was found to increase from 53.2 to 61.3 nm with increasing the sulfurization temperatures from 520 to 580 °C. The same trend was also observed for the grain size in the morphological analysis. Bandgap was varied from 0.87 to 0.92 eV, as the sulfurization temperature increased from 520 to 580 °C. Carrier concentration was found to decline with increasing sulfurization temperature while mobility and resistivity showed a progressive increment at higher temperatures.

Original languageEnglish
Pages (from-to)499-507
Number of pages9
JournalChalcogenide Letters
Volume15
Issue number10
Publication statusPublished - 1 Oct 2018

Fingerprint

Optoelectronic devices
solar cells
thin films
Temperature
temperature
structural analysis
magnetron sputtering
grain size
electrical properties
routes
Thin film solar cells
trends
optical properties
Crystallite size
impurities
electrical resistivity
Structural analysis
Magnetron sputtering
Carrier concentration
kinetics

Keywords

  • CuSnS thin films
  • Solar cells
  • Sputtering
  • Structural and optical properties
  • Sulfurization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Physics and Astronomy(all)

Cite this

Hossain, E. S., Chelvanathan, P., Shahahmadi, S. A., Ferdaous, M. T., Bais, B., Tiong, S. K., & Amin, N. (2018). Effects of sulfurization temperature on structural, morphological, and optoelectronic properties of CTS thin films solar cells. Chalcogenide Letters, 15(10), 499-507.

Effects of sulfurization temperature on structural, morphological, and optoelectronic properties of CTS thin films solar cells. / Hossain, E. S.; Chelvanathan, P.; Shahahmadi, S. A.; Ferdaous, M. T.; Bais, Badariah; Tiong, S. K.; Amin, Nowshad.

In: Chalcogenide Letters, Vol. 15, No. 10, 01.10.2018, p. 499-507.

Research output: Contribution to journalArticle

Hossain, ES, Chelvanathan, P, Shahahmadi, SA, Ferdaous, MT, Bais, B, Tiong, SK & Amin, N 2018, 'Effects of sulfurization temperature on structural, morphological, and optoelectronic properties of CTS thin films solar cells', Chalcogenide Letters, vol. 15, no. 10, pp. 499-507.
Hossain, E. S. ; Chelvanathan, P. ; Shahahmadi, S. A. ; Ferdaous, M. T. ; Bais, Badariah ; Tiong, S. K. ; Amin, Nowshad. / Effects of sulfurization temperature on structural, morphological, and optoelectronic properties of CTS thin films solar cells. In: Chalcogenide Letters. 2018 ; Vol. 15, No. 10. pp. 499-507.
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AB - Cu2 SnS3 (CTS) thin films were fabricated by two-step process: deposition of precursor by RF magnetron sputtering, and subsequent sulfurization at different temperatures. The influence of sulfurization temperatures on the structural, morphological, optical, and electrical properties was investigated to find out the optimum growth route for CTS formation kinetics. All prepared samples were found Sn-rich by the EDX compositional analysis. Structural analysis confirmed the CTS formation with the impurity phase of Cu4 Sn7 S16 at lower temperature, and Sn2 S3 at higher sulfurization temperature. Crystallite size of these films was found to increase from 53.2 to 61.3 nm with increasing the sulfurization temperatures from 520 to 580 °C. The same trend was also observed for the grain size in the morphological analysis. Bandgap was varied from 0.87 to 0.92 eV, as the sulfurization temperature increased from 520 to 580 °C. Carrier concentration was found to decline with increasing sulfurization temperature while mobility and resistivity showed a progressive increment at higher temperatures.

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