Effects of sub-threshold operation on 32 nm technology node PMOSFETs evaluated from the perspective of 2-stage NBTI model

H. Hussin, N. Soin, Muhammad Faiz Bukhori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In ultra low-power applications, operations in the transistor's sub-threshold regime are critically important for meeting the system's stringent power requirements. However, due to the aggressive downscaling of CMOS transistors, the stress-induced NBTI has emerged as a reliability threat even in low-power systems. In this work, the characterization of NBTI in this simulation-based study is demonstrated during sub-threshold operation application. The two-stage model was implemented to simulate the positively charged E'centers, interface trap generation and the resulting threshold voltage shift. The observed threshold voltage shift was found to exhibit power-law time dependence of n ∼ 0.1, suggesting a hole-trapping mechanism. Moreover, the generation of switching oxide trap and interface trap in sub-threshold regime shows similar characteristics to that of super-threshold operation, hence, the sub-threshold NBTI is just as critical to the system's reliability.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
PublisherNano Science and Technology Institute
Pages463-466
Number of pages4
Volume2
ISBN (Print)9781482258271
Publication statusPublished - 2014
EventNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC
Duration: 15 Jun 201418 Jun 2014

Other

OtherNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
CityWashington, DC
Period15/6/1418/6/14

Fingerprint

Threshold voltage
Transistors
Oxides
4-nitrobenzylthioinosine
Negative bias temperature instability

Keywords

  • High-k dielectric
  • Interface trap, switching oxide trap
  • NBTI
  • p-MOSFET

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hussin, H., Soin, N., & Bukhori, M. F. (2014). Effects of sub-threshold operation on 32 nm technology node PMOSFETs evaluated from the perspective of 2-stage NBTI model. In Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 (Vol. 2, pp. 463-466). Nano Science and Technology Institute.

Effects of sub-threshold operation on 32 nm technology node PMOSFETs evaluated from the perspective of 2-stage NBTI model. / Hussin, H.; Soin, N.; Bukhori, Muhammad Faiz.

Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Vol. 2 Nano Science and Technology Institute, 2014. p. 463-466.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hussin, H, Soin, N & Bukhori, MF 2014, Effects of sub-threshold operation on 32 nm technology node PMOSFETs evaluated from the perspective of 2-stage NBTI model. in Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. vol. 2, Nano Science and Technology Institute, pp. 463-466, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014, Washington, DC, 15/6/14.
Hussin H, Soin N, Bukhori MF. Effects of sub-threshold operation on 32 nm technology node PMOSFETs evaluated from the perspective of 2-stage NBTI model. In Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Vol. 2. Nano Science and Technology Institute. 2014. p. 463-466
Hussin, H. ; Soin, N. ; Bukhori, Muhammad Faiz. / Effects of sub-threshold operation on 32 nm technology node PMOSFETs evaluated from the perspective of 2-stage NBTI model. Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Vol. 2 Nano Science and Technology Institute, 2014. pp. 463-466
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