Effects of rapid thermal annealing on GaAs 1-xBi x alloys

Abdul Rahman Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, J. P R David

Research output: Contribution to journalArticle

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Abstract

The effects of rapid thermal annealing on the optical and structural properties of GaAs 1-xBi x alloys for x ranging from 0.022 to 0.065 were investigated. At room temperature, the annealed GaAs 1-xBi x showed modest improvement (∼3 times) in photoluminescence (PL) while the PL peak wavelength remained relatively unchanged. It was found that bismuth related defects are not easily removed by annealing and the PL improvement may be dominated by the reduction of other types of defects including arsenic and gallium related defects. Also, the optimum annealing temperature is Bi composition dependent. For samples with x < 0.048, the optimum annealing temperature is 700 °C but reduces to 600 °C for higher compositions.

Original languageEnglish
Article number012106
JournalApplied Physics Letters
Volume101
Issue number1
DOIs
Publication statusPublished - 2 Jul 2012

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annealing
photoluminescence
defects
arsenic
bismuth
gallium
optical properties
temperature
room temperature
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Mohmad, A. R., Bastiman, F., Hunter, C. J., Richards, R., Sweeney, S. J., Ng, J. S., & David, J. P. R. (2012). Effects of rapid thermal annealing on GaAs 1-xBi x alloys. Applied Physics Letters, 101(1), [012106]. https://doi.org/10.1063/1.4731784

Effects of rapid thermal annealing on GaAs 1-xBi x alloys. / Mohmad, Abdul Rahman; Bastiman, F.; Hunter, C. J.; Richards, R.; Sweeney, S. J.; Ng, J. S.; David, J. P R.

In: Applied Physics Letters, Vol. 101, No. 1, 012106, 02.07.2012.

Research output: Contribution to journalArticle

Mohmad, AR, Bastiman, F, Hunter, CJ, Richards, R, Sweeney, SJ, Ng, JS & David, JPR 2012, 'Effects of rapid thermal annealing on GaAs 1-xBi x alloys', Applied Physics Letters, vol. 101, no. 1, 012106. https://doi.org/10.1063/1.4731784
Mohmad AR, Bastiman F, Hunter CJ, Richards R, Sweeney SJ, Ng JS et al. Effects of rapid thermal annealing on GaAs 1-xBi x alloys. Applied Physics Letters. 2012 Jul 2;101(1). 012106. https://doi.org/10.1063/1.4731784
Mohmad, Abdul Rahman ; Bastiman, F. ; Hunter, C. J. ; Richards, R. ; Sweeney, S. J. ; Ng, J. S. ; David, J. P R. / Effects of rapid thermal annealing on GaAs 1-xBi x alloys. In: Applied Physics Letters. 2012 ; Vol. 101, No. 1.
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