Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (GE) /aluminium oxide (Al2O3

Siti Kudnie Sahari, Nik Amni Fathi Nik Zaini Fathi, Azrul Azlan Hamzah, Norsuzailina Mohamed Sutan, Zaidi Embong, Suhana Mohamed Sultan, Muhammad Kashif, Marini Sawawi, Lilik Hasanah, Rohana Sapawi, Kuryati Kipli, Abdul Rahman Kram, Nazreen Junaidi

Research output: Contribution to journalArticle

Abstract

The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work, the effects of post deposition anneal (PDA) temperature between 400°C and 600°C on the chemical composition of interfacial layer between Ge and Al2O3 were examined by X-ray photoelectron spectroscopy (XPS). Investigation on thermal stability and structural characteristics for gate structure of Al2O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (XPS) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2O3 interface at higher temperature of 600°C.

Original languageEnglish
Pages (from-to)1195-1199
Number of pages5
JournalSains Malaysiana
Volume48
Issue number6
DOIs
Publication statusPublished - 1 Jan 2019

Fingerprint

germanium oxides
germanium
aluminum oxides
annealing
temperature
photoelectron spectroscopy
shrinkage
metal oxide semiconductors
chemical composition
x rays
thermal stability
field effect transistors
sputtering
oxygen

Keywords

  • AlO
  • Germanium
  • Interfacial layer
  • Post deposition anneal

ASJC Scopus subject areas

  • General

Cite this

Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (GE) /aluminium oxide (Al2O3 . / Sahari, Siti Kudnie; Nik Zaini Fathi, Nik Amni Fathi; Hamzah, Azrul Azlan; Sutan, Norsuzailina Mohamed; Embong, Zaidi; Sultan, Suhana Mohamed; Kashif, Muhammad; Sawawi, Marini; Hasanah, Lilik; Sapawi, Rohana; Kipli, Kuryati; Kram, Abdul Rahman; Junaidi, Nazreen.

In: Sains Malaysiana, Vol. 48, No. 6, 01.01.2019, p. 1195-1199.

Research output: Contribution to journalArticle

Sahari, SK, Nik Zaini Fathi, NAF, Hamzah, AA, Sutan, NM, Embong, Z, Sultan, SM, Kashif, M, Sawawi, M, Hasanah, L, Sapawi, R, Kipli, K, Kram, AR & Junaidi, N 2019, 'Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (GE) /aluminium oxide (Al2O3 ', Sains Malaysiana, vol. 48, no. 6, pp. 1195-1199. https://doi.org/10.17576/jsm-2019-4806-06
Sahari, Siti Kudnie ; Nik Zaini Fathi, Nik Amni Fathi ; Hamzah, Azrul Azlan ; Sutan, Norsuzailina Mohamed ; Embong, Zaidi ; Sultan, Suhana Mohamed ; Kashif, Muhammad ; Sawawi, Marini ; Hasanah, Lilik ; Sapawi, Rohana ; Kipli, Kuryati ; Kram, Abdul Rahman ; Junaidi, Nazreen. / Effects of post-deposition annealing temperatures on the composition of interfacial layer at Germanium (GE) /aluminium oxide (Al2O3 In: Sains Malaysiana. 2019 ; Vol. 48, No. 6. pp. 1195-1199.
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