Effects of germanium layer on silicon/germanium superlattice solar cells

A. A. Zulkefle, M. Zainon, Z. Zakaria, S. A. Shahahmadi, M. A M Bhuiyan, M. M. Alam, Kamaruzzaman Sopian, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Silicon germanium solar cells have widely been explored in recent years due to the property of germanium material that is capable to absorb light in low energy (IR range). However, the lattice mismatch between the silicon and germanium materials may lead to misfit dislocation defect on the solar cell. The defect can be reduced by arranging the silicon and germanium materials in superlattice (multilayer) structures whereby more lights can be absorbed by the solar cell which will increase its efficiency. In this paper, PC1D solar cell modeling software has been used to simulate and analyze the effects of the germanium thickness on the silicon/germanium superlattice (multilayer) solar cell. The total thickness is limited to 1μm. The simulation result shows that an efficiency of 10.16% (VOC = 0.4521V, ISC = 3.337A, FF =0.6734) is achieved with 0.2μm-Ge and 0.2μm-Si window layer, and 0.6μm-Si absorber layer.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3484-3486
Number of pages3
ISBN (Print)9781479932993
DOIs
Publication statusPublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL
Duration: 16 Jun 201321 Jun 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CityTampa, FL
Period16/6/1321/6/13

Fingerprint

Germanium
Solar cells
Silicon
Multilayers
Defects
Lattice mismatch
Volatile organic compounds
Dislocations (crystals)

Keywords

  • PC1D
  • Silicon germanium solar cell
  • Superlattice Si/Ge

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Zulkefle, A. A., Zainon, M., Zakaria, Z., Shahahmadi, S. A., Bhuiyan, M. A. M., Alam, M. M., ... Amin, N. (2013). Effects of germanium layer on silicon/germanium superlattice solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 3484-3486). [6744243] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744243

Effects of germanium layer on silicon/germanium superlattice solar cells. / Zulkefle, A. A.; Zainon, M.; Zakaria, Z.; Shahahmadi, S. A.; Bhuiyan, M. A M; Alam, M. M.; Sopian, Kamaruzzaman; Amin, Nowshad.

Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. p. 3484-3486 6744243.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zulkefle, AA, Zainon, M, Zakaria, Z, Shahahmadi, SA, Bhuiyan, MAM, Alam, MM, Sopian, K & Amin, N 2013, Effects of germanium layer on silicon/germanium superlattice solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6744243, Institute of Electrical and Electronics Engineers Inc., pp. 3484-3486, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, 16/6/13. https://doi.org/10.1109/PVSC.2013.6744243
Zulkefle AA, Zainon M, Zakaria Z, Shahahmadi SA, Bhuiyan MAM, Alam MM et al. Effects of germanium layer on silicon/germanium superlattice solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc. 2013. p. 3484-3486. 6744243 https://doi.org/10.1109/PVSC.2013.6744243
Zulkefle, A. A. ; Zainon, M. ; Zakaria, Z. ; Shahahmadi, S. A. ; Bhuiyan, M. A M ; Alam, M. M. ; Sopian, Kamaruzzaman ; Amin, Nowshad. / Effects of germanium layer on silicon/germanium superlattice solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 3484-3486
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AB - Silicon germanium solar cells have widely been explored in recent years due to the property of germanium material that is capable to absorb light in low energy (IR range). However, the lattice mismatch between the silicon and germanium materials may lead to misfit dislocation defect on the solar cell. The defect can be reduced by arranging the silicon and germanium materials in superlattice (multilayer) structures whereby more lights can be absorbed by the solar cell which will increase its efficiency. In this paper, PC1D solar cell modeling software has been used to simulate and analyze the effects of the germanium thickness on the silicon/germanium superlattice (multilayer) solar cell. The total thickness is limited to 1μm. The simulation result shows that an efficiency of 10.16% (VOC = 0.4521V, ISC = 3.337A, FF =0.6734) is achieved with 0.2μm-Ge and 0.2μm-Si window layer, and 0.6μm-Si absorber layer.

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