Effects of annealing temperature on morphology and Crystallinity of nitrogen doped zinc oxide (ZnO: N) nano films

J. Karamdel, F. Razaghian, A. Hadi, Chang Fu Dee, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconductor of ZnO has been extensively researched in recent years for its extraordinary properties. ZnO is naturally an n-type semiconductor and due to asymmetric doping limitations, it is difficult to obtain p-type ZnO. In this work the deposited nitrogen doped zinc oxide nano films by reactive magnetron sputtering technique, were treated using conventional thermal annealing, while, the annealing temperature were varied from 300 °C to 800 °C in a mixture of nitrogen and oxygen ambient. The surface morphology, Crystallinity and electrical characteristics of prepared films have been investigated with respect to the temperature of annealing process. The XRD spectra of samples before and after annealing processes confirmed the deposition of wurtzite crystalline structures of ZnO. However, the annealed samples exhibited smaller FWHM compared to un-annealed ones, which confirms better crystalline structure of annealed films. Moreover, un-annealed specimens showed n-type conductivity with an electron concentration of 2.5×1016 cm-3, while the annealed samples exhibited p-type behavior with a hole concentration of 8.2×1015 cm-3.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages302-305
Number of pages4
DOIs
Publication statusPublished - 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur
Duration: 19 Sep 201221 Sep 2012

Other

Other2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CityKuala Lumpur
Period19/9/1221/9/12

Fingerprint

Zinc oxide
Annealing
Nitrogen
Semiconductor materials
Crystalline materials
Hole concentration
Temperature
Reactive sputtering
Full width at half maximum
Magnetron sputtering
Surface morphology
Doping (additives)
Oxygen
Electrons

Keywords

  • annealing
  • conductivity
  • doped ZnO
  • Thin film

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Karamdel, J., Razaghian, F., Hadi, A., Dee, C. F., & Yeop Majlis, B. (2012). Effects of annealing temperature on morphology and Crystallinity of nitrogen doped zinc oxide (ZnO: N) nano films. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 302-305). [6417146] https://doi.org/10.1109/SMElec.2012.6417146

Effects of annealing temperature on morphology and Crystallinity of nitrogen doped zinc oxide (ZnO : N) nano films. / Karamdel, J.; Razaghian, F.; Hadi, A.; Dee, Chang Fu; Yeop Majlis, Burhanuddin.

2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 302-305 6417146.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Karamdel, J, Razaghian, F, Hadi, A, Dee, CF & Yeop Majlis, B 2012, Effects of annealing temperature on morphology and Crystallinity of nitrogen doped zinc oxide (ZnO: N) nano films. in 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings., 6417146, pp. 302-305, 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012, Kuala Lumpur, 19/9/12. https://doi.org/10.1109/SMElec.2012.6417146
Karamdel J, Razaghian F, Hadi A, Dee CF, Yeop Majlis B. Effects of annealing temperature on morphology and Crystallinity of nitrogen doped zinc oxide (ZnO: N) nano films. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 302-305. 6417146 https://doi.org/10.1109/SMElec.2012.6417146
Karamdel, J. ; Razaghian, F. ; Hadi, A. ; Dee, Chang Fu ; Yeop Majlis, Burhanuddin. / Effects of annealing temperature on morphology and Crystallinity of nitrogen doped zinc oxide (ZnO : N) nano films. 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. pp. 302-305
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