Effect of ZnTe and CdZnTe alloys at the back contact of 1-μm-thick CdTe thin film solar cells

Nowshad Amin, Akira Yamada, Makoto Konagai

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

N2-doped ZnTe was introduced onto 1-μm-thick CdTe absorbers in order to reduce the carrier recombination at the back contact of CdS/CdTe/C/Ag configuration solar cells. ZnTe films were grown by molecular beam epitaxy (MBE) on GaAs and Coming glass substrates to investigate the characteristics of the films. Epitaxial growth of ZnTe was realized on GaAs substrates and a hole concentration of 8 × 1018 cm-3 with a resistivity of 0.045 Ω·cm was achieved as a result of nitrogen doping. In contrast, polycrystalline ZnTe films were grown on Coming glass and CdTe thin films. Dark and photoconductivity of ZnTe films increased to 1.43 × 10-5 S/cm and 1.41 × 10-4 S/cm, respectively, while the Zn to Te ratio was decreased to 0.25 during MBE growth. These ZnTe films with different thicknesses were inserted into close-spaced sublimation (CSS)-grown 1-μm-thick CdTe solar cells. A conversion efficiency of 8.31% (Voc: 0.74 V, Jsc: 22.98 mA/cm2, FF: 0.49, area: 0.5 cm2) was achieved for a 0.2-μm-thick ZnTe layer with a cell configuration of CdS/CdTe/ZnTe/Cu-doped-C/Ag. Furthermore, to overcome the problem of possible recombination loss in the interface layer of CdTe and ZnTe, the intermediate ternary CdZnTe is investigated. The compositional factor in Cd1-xZnxTe:N alloy is varied and the dependence of the conductivity is evaluated. For instance, Cd0.5Zn0.5Te:N, with dark and photoconductivity of 2.13 × 10-6 and 2.9 × 10-5 S/cm, respectively, is inserted at the back contact of a 1-μm-thick CdTe solar cell. A conversion efficiency of 7.46% (Voc: 0.68 V, Jsc: 22.60 mA/cm2, FF: 0.49, area: 0.086 cm2) was achieved as the primary result for a 0.2-μm-thick Cd0.5Zn0.5 Te:N layer with the cell configuration of CdS/CdTe/Cd0.5Zn0.5Te:N/Au.

Original languageEnglish
Pages (from-to)2834-2841
Number of pages8
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number5 A
Publication statusPublished - May 2002
Externally publishedYes

Fingerprint

Thick films
solar cells
thin films
Solar cells
Photoconductivity
Molecular beam epitaxy
photoconductivity
Conversion efficiency
molecular beam epitaxy
configurations
Hole concentration
Glass
glass
Sublimation
Substrates
cells
sublimation
Epitaxial growth
absorbers
Doping (additives)

Keywords

  • CdTe
  • CdZnTe alloy
  • CSS growth
  • MBE
  • Solar cells
  • ZnTe

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of ZnTe and CdZnTe alloys at the back contact of 1-μm-thick CdTe thin film solar cells. / Amin, Nowshad; Yamada, Akira; Konagai, Makoto.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 5 A, 05.2002, p. 2834-2841.

Research output: Contribution to journalArticle

@article{2dde827465c54c7c8f965d77d4a4181f,
title = "Effect of ZnTe and CdZnTe alloys at the back contact of 1-μm-thick CdTe thin film solar cells",
abstract = "N2-doped ZnTe was introduced onto 1-μm-thick CdTe absorbers in order to reduce the carrier recombination at the back contact of CdS/CdTe/C/Ag configuration solar cells. ZnTe films were grown by molecular beam epitaxy (MBE) on GaAs and Coming glass substrates to investigate the characteristics of the films. Epitaxial growth of ZnTe was realized on GaAs substrates and a hole concentration of 8 × 1018 cm-3 with a resistivity of 0.045 Ω·cm was achieved as a result of nitrogen doping. In contrast, polycrystalline ZnTe films were grown on Coming glass and CdTe thin films. Dark and photoconductivity of ZnTe films increased to 1.43 × 10-5 S/cm and 1.41 × 10-4 S/cm, respectively, while the Zn to Te ratio was decreased to 0.25 during MBE growth. These ZnTe films with different thicknesses were inserted into close-spaced sublimation (CSS)-grown 1-μm-thick CdTe solar cells. A conversion efficiency of 8.31{\%} (Voc: 0.74 V, Jsc: 22.98 mA/cm2, FF: 0.49, area: 0.5 cm2) was achieved for a 0.2-μm-thick ZnTe layer with a cell configuration of CdS/CdTe/ZnTe/Cu-doped-C/Ag. Furthermore, to overcome the problem of possible recombination loss in the interface layer of CdTe and ZnTe, the intermediate ternary CdZnTe is investigated. The compositional factor in Cd1-xZnxTe:N alloy is varied and the dependence of the conductivity is evaluated. For instance, Cd0.5Zn0.5Te:N, with dark and photoconductivity of 2.13 × 10-6 and 2.9 × 10-5 S/cm, respectively, is inserted at the back contact of a 1-μm-thick CdTe solar cell. A conversion efficiency of 7.46{\%} (Voc: 0.68 V, Jsc: 22.60 mA/cm2, FF: 0.49, area: 0.086 cm2) was achieved as the primary result for a 0.2-μm-thick Cd0.5Zn0.5 Te:N layer with the cell configuration of CdS/CdTe/Cd0.5Zn0.5Te:N/Au.",
keywords = "CdTe, CdZnTe alloy, CSS growth, MBE, Solar cells, ZnTe",
author = "Nowshad Amin and Akira Yamada and Makoto Konagai",
year = "2002",
month = "5",
language = "English",
volume = "41",
pages = "2834--2841",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "5 A",

}

TY - JOUR

T1 - Effect of ZnTe and CdZnTe alloys at the back contact of 1-μm-thick CdTe thin film solar cells

AU - Amin, Nowshad

AU - Yamada, Akira

AU - Konagai, Makoto

PY - 2002/5

Y1 - 2002/5

N2 - N2-doped ZnTe was introduced onto 1-μm-thick CdTe absorbers in order to reduce the carrier recombination at the back contact of CdS/CdTe/C/Ag configuration solar cells. ZnTe films were grown by molecular beam epitaxy (MBE) on GaAs and Coming glass substrates to investigate the characteristics of the films. Epitaxial growth of ZnTe was realized on GaAs substrates and a hole concentration of 8 × 1018 cm-3 with a resistivity of 0.045 Ω·cm was achieved as a result of nitrogen doping. In contrast, polycrystalline ZnTe films were grown on Coming glass and CdTe thin films. Dark and photoconductivity of ZnTe films increased to 1.43 × 10-5 S/cm and 1.41 × 10-4 S/cm, respectively, while the Zn to Te ratio was decreased to 0.25 during MBE growth. These ZnTe films with different thicknesses were inserted into close-spaced sublimation (CSS)-grown 1-μm-thick CdTe solar cells. A conversion efficiency of 8.31% (Voc: 0.74 V, Jsc: 22.98 mA/cm2, FF: 0.49, area: 0.5 cm2) was achieved for a 0.2-μm-thick ZnTe layer with a cell configuration of CdS/CdTe/ZnTe/Cu-doped-C/Ag. Furthermore, to overcome the problem of possible recombination loss in the interface layer of CdTe and ZnTe, the intermediate ternary CdZnTe is investigated. The compositional factor in Cd1-xZnxTe:N alloy is varied and the dependence of the conductivity is evaluated. For instance, Cd0.5Zn0.5Te:N, with dark and photoconductivity of 2.13 × 10-6 and 2.9 × 10-5 S/cm, respectively, is inserted at the back contact of a 1-μm-thick CdTe solar cell. A conversion efficiency of 7.46% (Voc: 0.68 V, Jsc: 22.60 mA/cm2, FF: 0.49, area: 0.086 cm2) was achieved as the primary result for a 0.2-μm-thick Cd0.5Zn0.5 Te:N layer with the cell configuration of CdS/CdTe/Cd0.5Zn0.5Te:N/Au.

AB - N2-doped ZnTe was introduced onto 1-μm-thick CdTe absorbers in order to reduce the carrier recombination at the back contact of CdS/CdTe/C/Ag configuration solar cells. ZnTe films were grown by molecular beam epitaxy (MBE) on GaAs and Coming glass substrates to investigate the characteristics of the films. Epitaxial growth of ZnTe was realized on GaAs substrates and a hole concentration of 8 × 1018 cm-3 with a resistivity of 0.045 Ω·cm was achieved as a result of nitrogen doping. In contrast, polycrystalline ZnTe films were grown on Coming glass and CdTe thin films. Dark and photoconductivity of ZnTe films increased to 1.43 × 10-5 S/cm and 1.41 × 10-4 S/cm, respectively, while the Zn to Te ratio was decreased to 0.25 during MBE growth. These ZnTe films with different thicknesses were inserted into close-spaced sublimation (CSS)-grown 1-μm-thick CdTe solar cells. A conversion efficiency of 8.31% (Voc: 0.74 V, Jsc: 22.98 mA/cm2, FF: 0.49, area: 0.5 cm2) was achieved for a 0.2-μm-thick ZnTe layer with a cell configuration of CdS/CdTe/ZnTe/Cu-doped-C/Ag. Furthermore, to overcome the problem of possible recombination loss in the interface layer of CdTe and ZnTe, the intermediate ternary CdZnTe is investigated. The compositional factor in Cd1-xZnxTe:N alloy is varied and the dependence of the conductivity is evaluated. For instance, Cd0.5Zn0.5Te:N, with dark and photoconductivity of 2.13 × 10-6 and 2.9 × 10-5 S/cm, respectively, is inserted at the back contact of a 1-μm-thick CdTe solar cell. A conversion efficiency of 7.46% (Voc: 0.68 V, Jsc: 22.60 mA/cm2, FF: 0.49, area: 0.086 cm2) was achieved as the primary result for a 0.2-μm-thick Cd0.5Zn0.5 Te:N layer with the cell configuration of CdS/CdTe/Cd0.5Zn0.5Te:N/Au.

KW - CdTe

KW - CdZnTe alloy

KW - CSS growth

KW - MBE

KW - Solar cells

KW - ZnTe

UR - http://www.scopus.com/inward/record.url?scp=0036578056&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036578056&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0036578056

VL - 41

SP - 2834

EP - 2841

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 A

ER -