Effect of temperature on the etching rate of nitride and oxide layer using Buffered Oxide Etch

Norhafizah Burham, Gandi Sugandi, Mimiwaty Mohd Nor, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents the effect of temperature to the etch rate of nitride and oxide layers in Buffered Oxide Etch (BOE) solution. Either nitride or oxide layer is commonly used in the semiconductor fabrication process as a mask for the next wet etching process. A well-defined frame structure and reduced etching time will increase the productivity of the fabrication process. The approach starts with patterning the silicon nitride to study the frame structure that formed after the BOE process. Then, the patterned silicon nitride is dipped in BOE solution at two different temperatures, which are 25 °C and 80 °C. The structures that formed are compared, and it was evident that 80 °C gives a better mask structure. Next, the effect of temperature on the etching rate for oxide and nitride layers is further studied by varying the temperature from 40 °C up to 90 °C. At the end of experiment, it was found that temperature will improve the BOE etching process in terms of both time needed and the mask structure.

Original languageEnglish
Title of host publication2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages516-519
Number of pages4
ISBN (Electronic)9781509028894
DOIs
Publication statusPublished - 27 Mar 2017
Event2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016 - Putrajaya, Malaysia
Duration: 14 Nov 201616 Nov 2016

Other

Other2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016
CountryMalaysia
CityPutrajaya
Period14/11/1616/11/16

Fingerprint

Nitrides
nitrides
Etching
etching
Oxides
oxides
Masks
masks
Temperature
temperature
Silicon nitride
silicon nitrides
Fabrication
fabrication
Wet etching
productivity
Productivity
Semiconductor materials
Experiments

Keywords

  • Buffered Oxide Etched (BOE)
  • Frame structure
  • Nitride layer
  • Oxide layer
  • Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Control and Systems Engineering
  • Hardware and Architecture
  • Computer Networks and Communications
  • Instrumentation

Cite this

Burham, N., Sugandi, G., Nor, M. M., & Yeop Majlis, B. (2017). Effect of temperature on the etching rate of nitride and oxide layer using Buffered Oxide Etch. In 2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016 (pp. 516-519). [7888099] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICAEES.2016.7888099

Effect of temperature on the etching rate of nitride and oxide layer using Buffered Oxide Etch. / Burham, Norhafizah; Sugandi, Gandi; Nor, Mimiwaty Mohd; Yeop Majlis, Burhanuddin.

2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 516-519 7888099.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Burham, N, Sugandi, G, Nor, MM & Yeop Majlis, B 2017, Effect of temperature on the etching rate of nitride and oxide layer using Buffered Oxide Etch. in 2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016., 7888099, Institute of Electrical and Electronics Engineers Inc., pp. 516-519, 2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016, Putrajaya, Malaysia, 14/11/16. https://doi.org/10.1109/ICAEES.2016.7888099
Burham N, Sugandi G, Nor MM, Yeop Majlis B. Effect of temperature on the etching rate of nitride and oxide layer using Buffered Oxide Etch. In 2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 516-519. 7888099 https://doi.org/10.1109/ICAEES.2016.7888099
Burham, Norhafizah ; Sugandi, Gandi ; Nor, Mimiwaty Mohd ; Yeop Majlis, Burhanuddin. / Effect of temperature on the etching rate of nitride and oxide layer using Buffered Oxide Etch. 2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 516-519
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