Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience

S. K. Sahari, N. A. Abdul Halim, K. Muhammad, M. Sawawi, Azrul Azlan Hamzah, Burhanuddin Yeop Majlis

Research output: Contribution to journalArticle

Abstract

The present investigation deals with the effect of substrate orientation effect on the growth of thermally oxidized Ge. The thermal oxidation was performed at temperature between 375 and 550°C in dry oxygen ambient under atmospheric pressure. The thickness of thermally oxidized Ge films was measured by spectroscopic ellipsometry and the chemical bonding structures were characterized by using x-ray photoelectron spectroscopy (XPS). No orientation dependence was observed for the oxidation at temperature of 375°C while for oxidation at 490 and 550°C, Ge oxidation and GeO desorption rate of (100) orientation yield higher rate than (111). The larger atomic space of (100) orientation explains the higher oxidation and desorption rate at Ge surface.

Original languageEnglish
Article number012024
JournalIOP Conference Series: Materials Science and Engineering
Volume201
Issue number1
DOIs
Publication statusPublished - 2 Jun 2017

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Germanium oxides
Oxygen
Oxidation
Substrates
Desorption
Spectroscopic ellipsometry
Photoelectron spectroscopy
Atmospheric pressure
germanium oxide
X rays
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience. / Sahari, S. K.; Abdul Halim, N. A.; Muhammad, K.; Sawawi, M.; Hamzah, Azrul Azlan; Yeop Majlis, Burhanuddin.

In: IOP Conference Series: Materials Science and Engineering, Vol. 201, No. 1, 012024, 02.06.2017.

Research output: Contribution to journalArticle

@article{4233f9345dc447808933a57a4c8feff3,
title = "Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience",
abstract = "The present investigation deals with the effect of substrate orientation effect on the growth of thermally oxidized Ge. The thermal oxidation was performed at temperature between 375 and 550°C in dry oxygen ambient under atmospheric pressure. The thickness of thermally oxidized Ge films was measured by spectroscopic ellipsometry and the chemical bonding structures were characterized by using x-ray photoelectron spectroscopy (XPS). No orientation dependence was observed for the oxidation at temperature of 375°C while for oxidation at 490 and 550°C, Ge oxidation and GeO desorption rate of (100) orientation yield higher rate than (111). The larger atomic space of (100) orientation explains the higher oxidation and desorption rate at Ge surface.",
author = "Sahari, {S. K.} and {Abdul Halim}, {N. A.} and K. Muhammad and M. Sawawi and Hamzah, {Azrul Azlan} and {Yeop Majlis}, Burhanuddin",
year = "2017",
month = "6",
day = "2",
doi = "10.1088/1757-899X/201/1/012024",
language = "English",
volume = "201",
journal = "IOP Conference Series: Materials Science and Engineering",
issn = "1757-8981",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Effect of Substrate Orientation on the Growth of Germanium Oxide in Dry Oxygen Ambience

AU - Sahari, S. K.

AU - Abdul Halim, N. A.

AU - Muhammad, K.

AU - Sawawi, M.

AU - Hamzah, Azrul Azlan

AU - Yeop Majlis, Burhanuddin

PY - 2017/6/2

Y1 - 2017/6/2

N2 - The present investigation deals with the effect of substrate orientation effect on the growth of thermally oxidized Ge. The thermal oxidation was performed at temperature between 375 and 550°C in dry oxygen ambient under atmospheric pressure. The thickness of thermally oxidized Ge films was measured by spectroscopic ellipsometry and the chemical bonding structures were characterized by using x-ray photoelectron spectroscopy (XPS). No orientation dependence was observed for the oxidation at temperature of 375°C while for oxidation at 490 and 550°C, Ge oxidation and GeO desorption rate of (100) orientation yield higher rate than (111). The larger atomic space of (100) orientation explains the higher oxidation and desorption rate at Ge surface.

AB - The present investigation deals with the effect of substrate orientation effect on the growth of thermally oxidized Ge. The thermal oxidation was performed at temperature between 375 and 550°C in dry oxygen ambient under atmospheric pressure. The thickness of thermally oxidized Ge films was measured by spectroscopic ellipsometry and the chemical bonding structures were characterized by using x-ray photoelectron spectroscopy (XPS). No orientation dependence was observed for the oxidation at temperature of 375°C while for oxidation at 490 and 550°C, Ge oxidation and GeO desorption rate of (100) orientation yield higher rate than (111). The larger atomic space of (100) orientation explains the higher oxidation and desorption rate at Ge surface.

UR - http://www.scopus.com/inward/record.url?scp=85021826307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021826307&partnerID=8YFLogxK

U2 - 10.1088/1757-899X/201/1/012024

DO - 10.1088/1757-899X/201/1/012024

M3 - Article

AN - SCOPUS:85021826307

VL - 201

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

SN - 1757-8981

IS - 1

M1 - 012024

ER -