Effect of Sn doping on the properties of nano-structured ZnO thin films deposited by Co-sputtering technique

M. A. Islam, K. S. Rahman, F. Haque, N. A. Khan, Md. Akhtaruzzaman, M. M. Alam, Mohd Hafidz Ruslan, Kamaruzzaman Sopian, Nowshad Amin

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, tin doped zinc oxide (ZnO:Sn) nano-structured thin films were successfully deposited by co-sputtering of ZnO and Sn on top of glass substrate. The effect of Sn doping on the microstructure, phase, morphology, optical and electrical properties of the films were extensively investigated by means of XRD, EDX, SEM, AFM, Hall Effect measurement, and UV-Vis spectrometry. The results showed that the undoped ZnO film exhibited preferred orientation along the c-axis of the hexagonal wurtzite structure. With increase of Sn doping, the peak position of the (002) plane was shifted to the higher 2θ values, and ultimately changed to amorphous structure. The absorption edge was shifted to blue region which confirmed the excitonic quantum confinement effect in the films. Consequently, improved surface morphology with optical bandgap, reduced average particle size, reduced resistivity, enhanced Hall mobility and carrier concentration were observed in the doped films after vacuum annealing. Among all of the as-deposited and annealed ZnO:Sn films investigated in this study, annealed film doped with 8 at.% of Sn concentration exhibited the best properties with a bandgap of 3.84 eV, RMS roughness of 2.51 nm, resistivity of 2.36 ohm-cm, and Hall mobility of 83 cm2 V-1 s-1.

Original languageEnglish
Pages (from-to)9184-9191
Number of pages8
JournalJournal of Nanoscience and Nanotechnology
Volume15
Issue number11
DOIs
Publication statusPublished - 1 Nov 2015

Fingerprint

Zinc Oxide
Tin
Vacuum
Particle Size
Glass
Sputtering
Spectrum Analysis
sputtering
Doping (additives)
Thin films
thin films
Hall mobility
electrical resistivity
Quantum confinement
Optical band gaps
Hall effect
Zinc oxide
wurtzite
zinc oxides
Spectrometry

Keywords

  • Annealing
  • Co-sputtering
  • Electrical properties
  • Nano-structure
  • Sn doped ZnO

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Effect of Sn doping on the properties of nano-structured ZnO thin films deposited by Co-sputtering technique. / Islam, M. A.; Rahman, K. S.; Haque, F.; Khan, N. A.; Akhtaruzzaman, Md.; Alam, M. M.; Ruslan, Mohd Hafidz; Sopian, Kamaruzzaman; Amin, Nowshad.

In: Journal of Nanoscience and Nanotechnology, Vol. 15, No. 11, 01.11.2015, p. 9184-9191.

Research output: Contribution to journalArticle

@article{fdbd801aaa1943ea91309618993013ee,
title = "Effect of Sn doping on the properties of nano-structured ZnO thin films deposited by Co-sputtering technique",
abstract = "In this study, tin doped zinc oxide (ZnO:Sn) nano-structured thin films were successfully deposited by co-sputtering of ZnO and Sn on top of glass substrate. The effect of Sn doping on the microstructure, phase, morphology, optical and electrical properties of the films were extensively investigated by means of XRD, EDX, SEM, AFM, Hall Effect measurement, and UV-Vis spectrometry. The results showed that the undoped ZnO film exhibited preferred orientation along the c-axis of the hexagonal wurtzite structure. With increase of Sn doping, the peak position of the (002) plane was shifted to the higher 2θ values, and ultimately changed to amorphous structure. The absorption edge was shifted to blue region which confirmed the excitonic quantum confinement effect in the films. Consequently, improved surface morphology with optical bandgap, reduced average particle size, reduced resistivity, enhanced Hall mobility and carrier concentration were observed in the doped films after vacuum annealing. Among all of the as-deposited and annealed ZnO:Sn films investigated in this study, annealed film doped with 8 at.{\%} of Sn concentration exhibited the best properties with a bandgap of 3.84 eV, RMS roughness of 2.51 nm, resistivity of 2.36 ohm-cm, and Hall mobility of 83 cm2 V-1 s-1.",
keywords = "Annealing, Co-sputtering, Electrical properties, Nano-structure, Sn doped ZnO",
author = "Islam, {M. A.} and Rahman, {K. S.} and F. Haque and Khan, {N. A.} and Md. Akhtaruzzaman and Alam, {M. M.} and Ruslan, {Mohd Hafidz} and Kamaruzzaman Sopian and Nowshad Amin",
year = "2015",
month = "11",
day = "1",
doi = "10.1166/jnn.2015.11416",
language = "English",
volume = "15",
pages = "9184--9191",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "11",

}

TY - JOUR

T1 - Effect of Sn doping on the properties of nano-structured ZnO thin films deposited by Co-sputtering technique

AU - Islam, M. A.

AU - Rahman, K. S.

AU - Haque, F.

AU - Khan, N. A.

AU - Akhtaruzzaman, Md.

AU - Alam, M. M.

AU - Ruslan, Mohd Hafidz

AU - Sopian, Kamaruzzaman

AU - Amin, Nowshad

PY - 2015/11/1

Y1 - 2015/11/1

N2 - In this study, tin doped zinc oxide (ZnO:Sn) nano-structured thin films were successfully deposited by co-sputtering of ZnO and Sn on top of glass substrate. The effect of Sn doping on the microstructure, phase, morphology, optical and electrical properties of the films were extensively investigated by means of XRD, EDX, SEM, AFM, Hall Effect measurement, and UV-Vis spectrometry. The results showed that the undoped ZnO film exhibited preferred orientation along the c-axis of the hexagonal wurtzite structure. With increase of Sn doping, the peak position of the (002) plane was shifted to the higher 2θ values, and ultimately changed to amorphous structure. The absorption edge was shifted to blue region which confirmed the excitonic quantum confinement effect in the films. Consequently, improved surface morphology with optical bandgap, reduced average particle size, reduced resistivity, enhanced Hall mobility and carrier concentration were observed in the doped films after vacuum annealing. Among all of the as-deposited and annealed ZnO:Sn films investigated in this study, annealed film doped with 8 at.% of Sn concentration exhibited the best properties with a bandgap of 3.84 eV, RMS roughness of 2.51 nm, resistivity of 2.36 ohm-cm, and Hall mobility of 83 cm2 V-1 s-1.

AB - In this study, tin doped zinc oxide (ZnO:Sn) nano-structured thin films were successfully deposited by co-sputtering of ZnO and Sn on top of glass substrate. The effect of Sn doping on the microstructure, phase, morphology, optical and electrical properties of the films were extensively investigated by means of XRD, EDX, SEM, AFM, Hall Effect measurement, and UV-Vis spectrometry. The results showed that the undoped ZnO film exhibited preferred orientation along the c-axis of the hexagonal wurtzite structure. With increase of Sn doping, the peak position of the (002) plane was shifted to the higher 2θ values, and ultimately changed to amorphous structure. The absorption edge was shifted to blue region which confirmed the excitonic quantum confinement effect in the films. Consequently, improved surface morphology with optical bandgap, reduced average particle size, reduced resistivity, enhanced Hall mobility and carrier concentration were observed in the doped films after vacuum annealing. Among all of the as-deposited and annealed ZnO:Sn films investigated in this study, annealed film doped with 8 at.% of Sn concentration exhibited the best properties with a bandgap of 3.84 eV, RMS roughness of 2.51 nm, resistivity of 2.36 ohm-cm, and Hall mobility of 83 cm2 V-1 s-1.

KW - Annealing

KW - Co-sputtering

KW - Electrical properties

KW - Nano-structure

KW - Sn doped ZnO

UR - http://www.scopus.com/inward/record.url?scp=84944754894&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84944754894&partnerID=8YFLogxK

U2 - 10.1166/jnn.2015.11416

DO - 10.1166/jnn.2015.11416

M3 - Article

AN - SCOPUS:84944754894

VL - 15

SP - 9184

EP - 9191

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 11

ER -