### Abstract

The effect of size on electronic states in a strained pyramidal InAs-GaAs quantum dot system was studied. A comparison was made between two InAs quantum pyramids of different sizes embedded inside a cubic GaAs susbtrate material. Strain relaxation was carried out via the Metropolis Monte Carlo method and the calculated local strain tensors were then included to solve the energy values and the wave functions of the electronic states inside the two simulation cube. The 3D finite difference scheme was employed to solve the time independent Schrödinger equation based on the decoupled electron-hole model. Calculated energy values of the four lowest electronic states showed that the transitions between the electron and hole states widen as the size of the dot becomes smaller especially between the ground states. The confinement of electrons and holes become weaker as the size of the dot reduces.

Original language | English |
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Title of host publication | 2015 UKM FST Postgraduate Colloquium: Proceedings of the Universiti Kebangsaan Malaysia, Faculty of Science and Technology 2015 Postgraduate Colloquium |

Publisher | American Institute of Physics Inc. |

Volume | 1678 |

ISBN (Electronic) | 9780735413252 |

DOIs | |

Publication status | Published - 25 Sep 2015 |

Event | 2015 Postgraduate Colloquium of the Universiti Kebangsaan Malaysia, Faculty of Science and Technology, UKM FST 2015 - Selangor, Malaysia Duration: 15 Apr 2015 → 16 Apr 2015 |

### Other

Other | 2015 Postgraduate Colloquium of the Universiti Kebangsaan Malaysia, Faculty of Science and Technology, UKM FST 2015 |
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Country | Malaysia |

City | Selangor |

Period | 15/4/15 → 16/4/15 |

### Fingerprint

### Keywords

- electronic states
- InAs-GaAs quantum dots
- Metropolis Monte Carlo
- strain

### ASJC Scopus subject areas

- Physics and Astronomy(all)

### Cite this

*2015 UKM FST Postgraduate Colloquium: Proceedings of the Universiti Kebangsaan Malaysia, Faculty of Science and Technology 2015 Postgraduate Colloquium*(Vol. 1678). [040015] American Institute of Physics Inc.. https://doi.org/10.1063/1.4931272

**Effect of size on electronic states in a strained pyramidal InAs-GaAs quantum dot system.** / Ripan, G. H.; Woon, C. Y.; Gopir, Geri Kibe.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

*2015 UKM FST Postgraduate Colloquium: Proceedings of the Universiti Kebangsaan Malaysia, Faculty of Science and Technology 2015 Postgraduate Colloquium.*vol. 1678, 040015, American Institute of Physics Inc., 2015 Postgraduate Colloquium of the Universiti Kebangsaan Malaysia, Faculty of Science and Technology, UKM FST 2015, Selangor, Malaysia, 15/4/15. https://doi.org/10.1063/1.4931272

}

TY - GEN

T1 - Effect of size on electronic states in a strained pyramidal InAs-GaAs quantum dot system

AU - Ripan, G. H.

AU - Woon, C. Y.

AU - Gopir, Geri Kibe

PY - 2015/9/25

Y1 - 2015/9/25

N2 - The effect of size on electronic states in a strained pyramidal InAs-GaAs quantum dot system was studied. A comparison was made between two InAs quantum pyramids of different sizes embedded inside a cubic GaAs susbtrate material. Strain relaxation was carried out via the Metropolis Monte Carlo method and the calculated local strain tensors were then included to solve the energy values and the wave functions of the electronic states inside the two simulation cube. The 3D finite difference scheme was employed to solve the time independent Schrödinger equation based on the decoupled electron-hole model. Calculated energy values of the four lowest electronic states showed that the transitions between the electron and hole states widen as the size of the dot becomes smaller especially between the ground states. The confinement of electrons and holes become weaker as the size of the dot reduces.

AB - The effect of size on electronic states in a strained pyramidal InAs-GaAs quantum dot system was studied. A comparison was made between two InAs quantum pyramids of different sizes embedded inside a cubic GaAs susbtrate material. Strain relaxation was carried out via the Metropolis Monte Carlo method and the calculated local strain tensors were then included to solve the energy values and the wave functions of the electronic states inside the two simulation cube. The 3D finite difference scheme was employed to solve the time independent Schrödinger equation based on the decoupled electron-hole model. Calculated energy values of the four lowest electronic states showed that the transitions between the electron and hole states widen as the size of the dot becomes smaller especially between the ground states. The confinement of electrons and holes become weaker as the size of the dot reduces.

KW - electronic states

KW - InAs-GaAs quantum dots

KW - Metropolis Monte Carlo

KW - strain

UR - http://www.scopus.com/inward/record.url?scp=85006186611&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85006186611&partnerID=8YFLogxK

U2 - 10.1063/1.4931272

DO - 10.1063/1.4931272

M3 - Conference contribution

AN - SCOPUS:85006186611

VL - 1678

BT - 2015 UKM FST Postgraduate Colloquium: Proceedings of the Universiti Kebangsaan Malaysia, Faculty of Science and Technology 2015 Postgraduate Colloquium

PB - American Institute of Physics Inc.

ER -