Effect of rf power on the growth of silicon nanowires by hot-wire assisted plasma enhanced chemical vapor deposition (HW-PECVD) technique

Su Kong Chong, Boon Tong Goh, Zarina Aspanut, Muhamad Rasat Muhamad, Chang Fu Dee, Saadah Abdul Rahman

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Silicon nanowires (SiNWs) were synthesized by simultaneous evaporation of Au and Si deposition using H2 diluted SiH4. The deposition techniques combined hot-wire (HW) and plasma enhanced chemical vapor deposition (PECVD). Au wires were placed on the filament and heated simultaneously with the activation of the rf plasma for the dissociation of SiH4 and H2 gases. Five set of samples were deposited on ITO-coated glass substrate at different rf power varied from 20 to 100 W in an interval of 20 W, keeping other deposition parameters constant. High yield of SiNWs with diameter ranging from 60 to 400 nm and length about 10 μm were grown at rf power of 80 W (power density ∼ 1018 mW cm-2). Rf power of 100 W (power density ∼ 1273 mW cm-2) suppressed the growth of these SiNWs. The growth mechanisms of SiNWs are tentatively proposed. The nanocrystalline structure of SiNWs is confirmed by Raman spectra and HRTEM measurement.

Original languageEnglish
Pages (from-to)4933-4939
Number of pages7
JournalThin Solid Films
Volume519
Issue number15
DOIs
Publication statusPublished - 31 May 2011

Fingerprint

Silicon
Plasma enhanced chemical vapor deposition
Nanowires
nanowires
vapor deposition
wire
Wire
silicon
radiant flux density
nanostructure (characteristics)
ITO (semiconductors)
Raman scattering
filaments
Evaporation
Gases
Chemical activation
evaporation
activation
dissociation
Raman spectra

Keywords

  • HRTEM
  • HW-PECVD
  • Raman
  • Rf power
  • Silicon nanowires

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Effect of rf power on the growth of silicon nanowires by hot-wire assisted plasma enhanced chemical vapor deposition (HW-PECVD) technique. / Chong, Su Kong; Goh, Boon Tong; Aspanut, Zarina; Muhamad, Muhamad Rasat; Dee, Chang Fu; Rahman, Saadah Abdul.

In: Thin Solid Films, Vol. 519, No. 15, 31.05.2011, p. 4933-4939.

Research output: Contribution to journalArticle

Chong, Su Kong ; Goh, Boon Tong ; Aspanut, Zarina ; Muhamad, Muhamad Rasat ; Dee, Chang Fu ; Rahman, Saadah Abdul. / Effect of rf power on the growth of silicon nanowires by hot-wire assisted plasma enhanced chemical vapor deposition (HW-PECVD) technique. In: Thin Solid Films. 2011 ; Vol. 519, No. 15. pp. 4933-4939.
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