Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

N. F H Aziz, R. Ritikos, S. A A Kamal, N. S Mohamed Hussain, Rozidawati Awang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Amorphous carbon nitride (a-CNx) thin films were deposited using radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique. A set of a-CNx thin films were prepared using pure methane (CH4) gas diluted with nitrogen (N2) gas. The rf power was varied at 50, 60, 70, 80, 90 and 100 W. These films were then annealed at 400 °C in a quartz tube furnace in argon (Ar) gas. The effects of rf power and thermal annealing on the chemical bonding and morphology of these samples were studied. Surface profilometer was used to measure film thickness. Fourier transform infra-red spectroscopy (FTIR) and Field emission scanning electron microscopy (FESEM) measurements were used to determine their chemical bonding and morphology respectively. The deposition rate of the films increased constantly with increasing rf power up to 80W, before decreasing with further increase in rf power. Fourier transform infra-red spectroscopy (FTIR) studies showed a systematic change in the spectra and revealed three main peaks included C-N, C=N, C=C and C=N triple bond. C=N and C=N bonds decreased with increased C-N bonds after thermal annealing process. The FESEM images showed that the structure is porous for as-deposited and covered by granule-like grain structure after thermal annealing process was done. The resistance of the a-CN x thin film changed from 23.765 kω to 5.845 kΩ in the relative humidity range of 5 to 92 % and the film shows a good response and repeatability as a humidity sensing materials. This work showed that rf power and thermal annealing has significant effects on the chemical bonding and surface morphology of the a-CNx films and but yield films which are potential candidate as humidity sensor device.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages125-131
Number of pages7
Volume1571
DOIs
Publication statusPublished - 2013
Event2013 UKM Faculty of Science and Technology Post-Graduate Colloquium - Selangor
Duration: 3 Jul 20134 Jul 2013

Other

Other2013 UKM Faculty of Science and Technology Post-Graduate Colloquium
CitySelangor
Period3/7/134/7/13

Fingerprint

humidity
annealing
sensors
thin films
field emission
infrared spectroscopy
gases
profilometers
scanning electron microscopy
carbon nitrides
furnaces
radio frequencies
film thickness
methane
quartz
argon
vapor deposition
tubes
nitrogen

Keywords

  • Carbon nitride
  • Chemical bonding
  • Rf power
  • Thermal annealing

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Aziz, N. F. H., Ritikos, R., Kamal, S. A. A., Hussain, N. S. M., & Awang, R. (2013). Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor. In AIP Conference Proceedings (Vol. 1571, pp. 125-131) https://doi.org/10.1063/1.4858641

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor. / Aziz, N. F H; Ritikos, R.; Kamal, S. A A; Hussain, N. S Mohamed; Awang, Rozidawati.

AIP Conference Proceedings. Vol. 1571 2013. p. 125-131.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Aziz, NFH, Ritikos, R, Kamal, SAA, Hussain, NSM & Awang, R 2013, Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor. in AIP Conference Proceedings. vol. 1571, pp. 125-131, 2013 UKM Faculty of Science and Technology Post-Graduate Colloquium, Selangor, 3/7/13. https://doi.org/10.1063/1.4858641
Aziz NFH, Ritikos R, Kamal SAA, Hussain NSM, Awang R. Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor. In AIP Conference Proceedings. Vol. 1571. 2013. p. 125-131 https://doi.org/10.1063/1.4858641
Aziz, N. F H ; Ritikos, R. ; Kamal, S. A A ; Hussain, N. S Mohamed ; Awang, Rozidawati. / Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor. AIP Conference Proceedings. Vol. 1571 2013. pp. 125-131
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N2 - Amorphous carbon nitride (a-CNx) thin films were deposited using radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique. A set of a-CNx thin films were prepared using pure methane (CH4) gas diluted with nitrogen (N2) gas. The rf power was varied at 50, 60, 70, 80, 90 and 100 W. These films were then annealed at 400 °C in a quartz tube furnace in argon (Ar) gas. The effects of rf power and thermal annealing on the chemical bonding and morphology of these samples were studied. Surface profilometer was used to measure film thickness. Fourier transform infra-red spectroscopy (FTIR) and Field emission scanning electron microscopy (FESEM) measurements were used to determine their chemical bonding and morphology respectively. The deposition rate of the films increased constantly with increasing rf power up to 80W, before decreasing with further increase in rf power. Fourier transform infra-red spectroscopy (FTIR) studies showed a systematic change in the spectra and revealed three main peaks included C-N, C=N, C=C and C=N triple bond. C=N and C=N bonds decreased with increased C-N bonds after thermal annealing process. The FESEM images showed that the structure is porous for as-deposited and covered by granule-like grain structure after thermal annealing process was done. The resistance of the a-CN x thin film changed from 23.765 kω to 5.845 kΩ in the relative humidity range of 5 to 92 % and the film shows a good response and repeatability as a humidity sensing materials. This work showed that rf power and thermal annealing has significant effects on the chemical bonding and surface morphology of the a-CNx films and but yield films which are potential candidate as humidity sensor device.

AB - Amorphous carbon nitride (a-CNx) thin films were deposited using radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique. A set of a-CNx thin films were prepared using pure methane (CH4) gas diluted with nitrogen (N2) gas. The rf power was varied at 50, 60, 70, 80, 90 and 100 W. These films were then annealed at 400 °C in a quartz tube furnace in argon (Ar) gas. The effects of rf power and thermal annealing on the chemical bonding and morphology of these samples were studied. Surface profilometer was used to measure film thickness. Fourier transform infra-red spectroscopy (FTIR) and Field emission scanning electron microscopy (FESEM) measurements were used to determine their chemical bonding and morphology respectively. The deposition rate of the films increased constantly with increasing rf power up to 80W, before decreasing with further increase in rf power. Fourier transform infra-red spectroscopy (FTIR) studies showed a systematic change in the spectra and revealed three main peaks included C-N, C=N, C=C and C=N triple bond. C=N and C=N bonds decreased with increased C-N bonds after thermal annealing process. The FESEM images showed that the structure is porous for as-deposited and covered by granule-like grain structure after thermal annealing process was done. The resistance of the a-CN x thin film changed from 23.765 kω to 5.845 kΩ in the relative humidity range of 5 to 92 % and the film shows a good response and repeatability as a humidity sensing materials. This work showed that rf power and thermal annealing has significant effects on the chemical bonding and surface morphology of the a-CNx films and but yield films which are potential candidate as humidity sensor device.

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