Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL

M. S. Khairul Anuar, A. Mohd Sharizal, S. M. Mitani, Y. Mohamed Razman, A. F. Awang Mat, Pankaj Kumar Choudhury

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The paper deals with the development of Ni/Au/Ge/Au ohmic contacts for the fabrication of VCSELs to be operated in the 980 nm of the electromagnetic (EM) spectrum. The VCSEL structures are grown by the process of molecular beam epitaxy (MBE) whereas the contacts are deposited by electron beam evaporator. The n-contact metallization has been performed along with RTA before as well as after the fabrication of the VCSEL structure, and the effect of RTA treatment on the grown VCSEL has been studied in the different cases.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages373-377
Number of pages5
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur
Duration: 29 Nov 20061 Dec 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CityKuala Lumpur
Period29/11/061/12/06

Fingerprint

Rapid thermal annealing
Surface emitting lasers
Oxides
Fabrication
Ohmic contacts
Evaporators
Metallizing
Molecular beam epitaxy
Electron beams

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Khairul Anuar, M. S., Mohd Sharizal, A., Mitani, S. M., Mohamed Razman, Y., Awang Mat, A. F., & Choudhury, P. K. (2006). Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 373-377). [4266634] https://doi.org/10.1109/SMELEC.2006.381084

Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL. / Khairul Anuar, M. S.; Mohd Sharizal, A.; Mitani, S. M.; Mohamed Razman, Y.; Awang Mat, A. F.; Choudhury, Pankaj Kumar.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 373-377 4266634.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Khairul Anuar, MS, Mohd Sharizal, A, Mitani, SM, Mohamed Razman, Y, Awang Mat, AF & Choudhury, PK 2006, Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4266634, pp. 373-377, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, 29/11/06. https://doi.org/10.1109/SMELEC.2006.381084
Khairul Anuar MS, Mohd Sharizal A, Mitani SM, Mohamed Razman Y, Awang Mat AF, Choudhury PK. Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 373-377. 4266634 https://doi.org/10.1109/SMELEC.2006.381084
Khairul Anuar, M. S. ; Mohd Sharizal, A. ; Mitani, S. M. ; Mohamed Razman, Y. ; Awang Mat, A. F. ; Choudhury, Pankaj Kumar. / Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. pp. 373-377
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