Effect of process parameter variations on threshold voltage in 45nm NMOS device

F. Salehuddin, I. Ahmad, F. A. Hamid, Azami Zaharim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Taguchi method was used to optimize of the effect process parameter variations on threshold voltage in 45nm NMOS device. In this paper, there are four process parameters (factors) were used, which are Halo Implantation, Source/Drain (S/D) Implantation, Oxide Growth Temperature and Silicide Anneal temperature. The virtual fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. These two modules were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (VTH) results were used as the evaluation variables. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. The predicted values of the process parameters were then successfully verified with ATHENA and ATLAS's simulator. In this research, oxide growth temperature was identified as one of the process parameters that has the strongest effect on the response characteristics. While the S/D Implantation was identified as adjustment factor to get the nominal values of threshold voltage for NMOS device equal to 0.15V.

Original languageEnglish
Title of host publicationProceeding, 2010 IEEE Student Conference on Research and Development - Engineering: Innovation and Beyond, SCOReD 2010
Pages334-338
Number of pages5
DOIs
Publication statusPublished - 2010
Event2010 8th IEEE Student Conference on Research and Development - Engineering: Innovation and Beyond, SCOReD 2010 - Kuala Lumpur
Duration: 13 Dec 201014 Dec 2010

Other

Other2010 8th IEEE Student Conference on Research and Development - Engineering: Innovation and Beyond, SCOReD 2010
CityKuala Lumpur
Period13/12/1014/12/10

Fingerprint

Taguchi methods
Threshold voltage
Growth temperature
Oxides
Simulators
Fabrication
Temperature
evaluation
Values

Keywords

  • 45nm NMOS
  • Process parameter variation
  • Silvaco
  • Taguchi method

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Education

Cite this

Salehuddin, F., Ahmad, I., Hamid, F. A., & Zaharim, A. (2010). Effect of process parameter variations on threshold voltage in 45nm NMOS device. In Proceeding, 2010 IEEE Student Conference on Research and Development - Engineering: Innovation and Beyond, SCOReD 2010 (pp. 334-338). [5704034] https://doi.org/10.1109/SCORED.2010.5704034

Effect of process parameter variations on threshold voltage in 45nm NMOS device. / Salehuddin, F.; Ahmad, I.; Hamid, F. A.; Zaharim, Azami.

Proceeding, 2010 IEEE Student Conference on Research and Development - Engineering: Innovation and Beyond, SCOReD 2010. 2010. p. 334-338 5704034.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Salehuddin, F, Ahmad, I, Hamid, FA & Zaharim, A 2010, Effect of process parameter variations on threshold voltage in 45nm NMOS device. in Proceeding, 2010 IEEE Student Conference on Research and Development - Engineering: Innovation and Beyond, SCOReD 2010., 5704034, pp. 334-338, 2010 8th IEEE Student Conference on Research and Development - Engineering: Innovation and Beyond, SCOReD 2010, Kuala Lumpur, 13/12/10. https://doi.org/10.1109/SCORED.2010.5704034
Salehuddin F, Ahmad I, Hamid FA, Zaharim A. Effect of process parameter variations on threshold voltage in 45nm NMOS device. In Proceeding, 2010 IEEE Student Conference on Research and Development - Engineering: Innovation and Beyond, SCOReD 2010. 2010. p. 334-338. 5704034 https://doi.org/10.1109/SCORED.2010.5704034
Salehuddin, F. ; Ahmad, I. ; Hamid, F. A. ; Zaharim, Azami. / Effect of process parameter variations on threshold voltage in 45nm NMOS device. Proceeding, 2010 IEEE Student Conference on Research and Development - Engineering: Innovation and Beyond, SCOReD 2010. 2010. pp. 334-338
@inproceedings{1877526cb0c54aaca94b7528750f3be0,
title = "Effect of process parameter variations on threshold voltage in 45nm NMOS device",
abstract = "Taguchi method was used to optimize of the effect process parameter variations on threshold voltage in 45nm NMOS device. In this paper, there are four process parameters (factors) were used, which are Halo Implantation, Source/Drain (S/D) Implantation, Oxide Growth Temperature and Silicide Anneal temperature. The virtual fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. These two modules were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (VTH) results were used as the evaluation variables. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. The predicted values of the process parameters were then successfully verified with ATHENA and ATLAS's simulator. In this research, oxide growth temperature was identified as one of the process parameters that has the strongest effect on the response characteristics. While the S/D Implantation was identified as adjustment factor to get the nominal values of threshold voltage for NMOS device equal to 0.15V.",
keywords = "45nm NMOS, Process parameter variation, Silvaco, Taguchi method",
author = "F. Salehuddin and I. Ahmad and Hamid, {F. A.} and Azami Zaharim",
year = "2010",
doi = "10.1109/SCORED.2010.5704034",
language = "English",
isbn = "9781424486489",
pages = "334--338",
booktitle = "Proceeding, 2010 IEEE Student Conference on Research and Development - Engineering: Innovation and Beyond, SCOReD 2010",

}

TY - GEN

T1 - Effect of process parameter variations on threshold voltage in 45nm NMOS device

AU - Salehuddin, F.

AU - Ahmad, I.

AU - Hamid, F. A.

AU - Zaharim, Azami

PY - 2010

Y1 - 2010

N2 - Taguchi method was used to optimize of the effect process parameter variations on threshold voltage in 45nm NMOS device. In this paper, there are four process parameters (factors) were used, which are Halo Implantation, Source/Drain (S/D) Implantation, Oxide Growth Temperature and Silicide Anneal temperature. The virtual fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. These two modules were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (VTH) results were used as the evaluation variables. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. The predicted values of the process parameters were then successfully verified with ATHENA and ATLAS's simulator. In this research, oxide growth temperature was identified as one of the process parameters that has the strongest effect on the response characteristics. While the S/D Implantation was identified as adjustment factor to get the nominal values of threshold voltage for NMOS device equal to 0.15V.

AB - Taguchi method was used to optimize of the effect process parameter variations on threshold voltage in 45nm NMOS device. In this paper, there are four process parameters (factors) were used, which are Halo Implantation, Source/Drain (S/D) Implantation, Oxide Growth Temperature and Silicide Anneal temperature. The virtual fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. These two modules were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (VTH) results were used as the evaluation variables. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. The predicted values of the process parameters were then successfully verified with ATHENA and ATLAS's simulator. In this research, oxide growth temperature was identified as one of the process parameters that has the strongest effect on the response characteristics. While the S/D Implantation was identified as adjustment factor to get the nominal values of threshold voltage for NMOS device equal to 0.15V.

KW - 45nm NMOS

KW - Process parameter variation

KW - Silvaco

KW - Taguchi method

UR - http://www.scopus.com/inward/record.url?scp=79951973740&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951973740&partnerID=8YFLogxK

U2 - 10.1109/SCORED.2010.5704034

DO - 10.1109/SCORED.2010.5704034

M3 - Conference contribution

AN - SCOPUS:79951973740

SN - 9781424486489

SP - 334

EP - 338

BT - Proceeding, 2010 IEEE Student Conference on Research and Development - Engineering: Innovation and Beyond, SCOReD 2010

ER -