Effect of Pr substitution on magnetoreisistance in La2/3Ba 1/3MnO3 perovskite

S. A. Halim, Huda Abdullah, K. P. Lim, O. J. Lee, E. B. Saion, W. M D W Yusoff, Abdulah Cik

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Polycrystalline of (La1-x Prx)0.67Ba 0.33MnO3 with x = 0, 0.167, 0.33, 0.5, 0.67, 0.833, 1 have been prepared using solid state reaction. The effect of substituting praseodymium at La-site on magnetoresistance (MR) effect has been investigated. The electrical property, was determined by using standard four-point probe resistivity measurement in a temperature range of 30 K to 300 K. Metal-insulator transition temperature (Tp) shifted to lower temperatures with the increases of Pr doping with the value of >300, 270, 250, 226, 202, 186 and 158 K for x = 0, 0.167, 0.33, 0.5, 0.67, 0.833, 1, respectively. Overall, MR drops slowly when temperature rises. All doping concentration give small variation range (5% to 25%) except for x=1.0, where this sample show significantly higher MR value at all temperature as compared to other samples. The highest MR value of 38% is observed at 270K. In the semiconducting portion, activation energy (Ea) has been investigated. The Ea increases as the doping concentration increases.

Original languageEnglish
Title of host publicationProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics
Pages497-502
Number of pages6
Publication statusPublished - 2004
Externally publishedYes
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur
Duration: 4 Dec 20049 Dec 2004

Other

Other2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
CityKuala Lumpur
Period4/12/049/12/04

Fingerprint

Magnetoresistance
Perovskite
Substitution reactions
Doping (additives)
Praseodymium
Temperature
Metal insulator transition
Solid state reactions
Superconducting transition temperature
Electric properties
Activation energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Halim, S. A., Abdullah, H., Lim, K. P., Lee, O. J., Saion, E. B., Yusoff, W. M. D. W., & Cik, A. (2004). Effect of Pr substitution on magnetoreisistance in La2/3Ba 1/3MnO3 perovskite. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics (pp. 497-502). [1620935]

Effect of Pr substitution on magnetoreisistance in La2/3Ba 1/3MnO3 perovskite. / Halim, S. A.; Abdullah, Huda; Lim, K. P.; Lee, O. J.; Saion, E. B.; Yusoff, W. M D W; Cik, Abdulah.

Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 497-502 1620935.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Halim, SA, Abdullah, H, Lim, KP, Lee, OJ, Saion, EB, Yusoff, WMDW & Cik, A 2004, Effect of Pr substitution on magnetoreisistance in La2/3Ba 1/3MnO3 perovskite. in Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics., 1620935, pp. 497-502, 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004, Kuala Lumpur, 4/12/04.
Halim SA, Abdullah H, Lim KP, Lee OJ, Saion EB, Yusoff WMDW et al. Effect of Pr substitution on magnetoreisistance in La2/3Ba 1/3MnO3 perovskite. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 497-502. 1620935
Halim, S. A. ; Abdullah, Huda ; Lim, K. P. ; Lee, O. J. ; Saion, E. B. ; Yusoff, W. M D W ; Cik, Abdulah. / Effect of Pr substitution on magnetoreisistance in La2/3Ba 1/3MnO3 perovskite. Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. pp. 497-502
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AU - Abdullah, Huda

AU - Lim, K. P.

AU - Lee, O. J.

AU - Saion, E. B.

AU - Yusoff, W. M D W

AU - Cik, Abdulah

PY - 2004

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N2 - Polycrystalline of (La1-x Prx)0.67Ba 0.33MnO3 with x = 0, 0.167, 0.33, 0.5, 0.67, 0.833, 1 have been prepared using solid state reaction. The effect of substituting praseodymium at La-site on magnetoresistance (MR) effect has been investigated. The electrical property, was determined by using standard four-point probe resistivity measurement in a temperature range of 30 K to 300 K. Metal-insulator transition temperature (Tp) shifted to lower temperatures with the increases of Pr doping with the value of >300, 270, 250, 226, 202, 186 and 158 K for x = 0, 0.167, 0.33, 0.5, 0.67, 0.833, 1, respectively. Overall, MR drops slowly when temperature rises. All doping concentration give small variation range (5% to 25%) except for x=1.0, where this sample show significantly higher MR value at all temperature as compared to other samples. The highest MR value of 38% is observed at 270K. In the semiconducting portion, activation energy (Ea) has been investigated. The Ea increases as the doping concentration increases.

AB - Polycrystalline of (La1-x Prx)0.67Ba 0.33MnO3 with x = 0, 0.167, 0.33, 0.5, 0.67, 0.833, 1 have been prepared using solid state reaction. The effect of substituting praseodymium at La-site on magnetoresistance (MR) effect has been investigated. The electrical property, was determined by using standard four-point probe resistivity measurement in a temperature range of 30 K to 300 K. Metal-insulator transition temperature (Tp) shifted to lower temperatures with the increases of Pr doping with the value of >300, 270, 250, 226, 202, 186 and 158 K for x = 0, 0.167, 0.33, 0.5, 0.67, 0.833, 1, respectively. Overall, MR drops slowly when temperature rises. All doping concentration give small variation range (5% to 25%) except for x=1.0, where this sample show significantly higher MR value at all temperature as compared to other samples. The highest MR value of 38% is observed at 270K. In the semiconducting portion, activation energy (Ea) has been investigated. The Ea increases as the doping concentration increases.

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