Effect of p-type transition metal dichalcogenide molybdenum ditelluride (p-MoTe2) layer formation in Cadmium Telluride solar cells from numerical analysis

N. Dhar, P. Chelvanathan, K. S. Rahman, M. A M Bhuiyan, M. M. Alam, Kamaruzzaman Sopian, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, we have investigated the effects of transition metal dichalcogenide namely Molybdenum ditelluride (MoTe2) layer formation in between Cadmium Telluride (CdTe) absorber layer and Mo back contact from numerical modeling. The main purpose was to investigate the possible effects of p-type MoTe2 in CdTe thin film solar cell. Energy band line-up in the vicinity of Mo/MoTe2/CdTe interface is investigated to explain the interface properties in terms of various parameters. It was found that p-type MoTe2 has some effects to the performance of CdTe thin film solar cells. Thickness, bandgap energy and carrier concentration of p-MoTe2 all have been varied in the numerical simulation to observe its effects on the cell performance. It was found that when thickness of MoTe2 is less than 20 nm, the cell efficiency decreases, which may be due to the shunting caused by the thinner p-MoTe2. Furthermore, the increase in MoTe 2 bandgap results in unfavorable effect to the performance of the cell mainly due to the possibility of electrons to drift towards the back contact and recombination. The increase of the carrier concentration improves the cell performance. This could be attributed to the less recombination of electrons as well as less built in potential (Vbi) at MoTe 2/CdTe junction.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3487-3492
Number of pages6
ISBN (Print)9781479932993
DOIs
Publication statusPublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL
Duration: 16 Jun 201321 Jun 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CityTampa, FL
Period16/6/1321/6/13

Fingerprint

Cadmium telluride
Molybdenum
Transition metals
Numerical analysis
Solar cells
Carrier concentration
Energy gap
Electrons
Band structure
Computer simulation

Keywords

  • Built in potential
  • Carrier bandgap energy
  • CdTe thin film solar cells
  • MoTe2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Dhar, N., Chelvanathan, P., Rahman, K. S., Bhuiyan, M. A. M., Alam, M. M., Sopian, K., & Amin, N. (2013). Effect of p-type transition metal dichalcogenide molybdenum ditelluride (p-MoTe2) layer formation in Cadmium Telluride solar cells from numerical analysis. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 3487-3492). [6744244] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744244

Effect of p-type transition metal dichalcogenide molybdenum ditelluride (p-MoTe2) layer formation in Cadmium Telluride solar cells from numerical analysis. / Dhar, N.; Chelvanathan, P.; Rahman, K. S.; Bhuiyan, M. A M; Alam, M. M.; Sopian, Kamaruzzaman; Amin, Nowshad.

Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. p. 3487-3492 6744244.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dhar, N, Chelvanathan, P, Rahman, KS, Bhuiyan, MAM, Alam, MM, Sopian, K & Amin, N 2013, Effect of p-type transition metal dichalcogenide molybdenum ditelluride (p-MoTe2) layer formation in Cadmium Telluride solar cells from numerical analysis. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6744244, Institute of Electrical and Electronics Engineers Inc., pp. 3487-3492, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, 16/6/13. https://doi.org/10.1109/PVSC.2013.6744244
Dhar N, Chelvanathan P, Rahman KS, Bhuiyan MAM, Alam MM, Sopian K et al. Effect of p-type transition metal dichalcogenide molybdenum ditelluride (p-MoTe2) layer formation in Cadmium Telluride solar cells from numerical analysis. In Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc. 2013. p. 3487-3492. 6744244 https://doi.org/10.1109/PVSC.2013.6744244
Dhar, N. ; Chelvanathan, P. ; Rahman, K. S. ; Bhuiyan, M. A M ; Alam, M. M. ; Sopian, Kamaruzzaman ; Amin, Nowshad. / Effect of p-type transition metal dichalcogenide molybdenum ditelluride (p-MoTe2) layer formation in Cadmium Telluride solar cells from numerical analysis. Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 3487-3492
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